SGS Thomson Microelectronics M74HC164 Datasheet

.HIGH SPEED

tPD= 15 ns(TYP.) AT VCC=5V

.LOWPOWERDISSIPATION

ICC=4µA(MAX.) AT TA=25°C

.OUTPUTDRIVE CAPABILITY

10 LSTTL LOADS

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.SYMMETRICALOUTPUT IMPEDANCE

IOL=IOH = 4 mA (MIN.)

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.WIDE OPERATINGVOLTAGE RANGE

VCC(OPR)= 2 V TO6 V

.PIN ANDFUNCTION COMPATIBLE

WITH 54/74LS164

M54HC164
M74HC164

8 BITSIPO SHIFT REGISTER

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 164F1R M74H C164M1R
M74HC 164B1R M74HC1 64C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC164 is a high speed CMOS 8 BIT
SIPO SHIFT REGISTER fabricated in silicon gate
C2MOStechnology. Ithasthesamehighspeedper­formance of LSTTL combined with true CMOS low
powerconsumption.

The HC164 is an 8 bit shiftregister with serialdata
entry and an output from each of the eight stages.
Data isentered serially through one oftwo inputs (A
or B), either of theseinputs canbeused asanactive
high enable for data entry through the other input.
An unused input must be high, or both inputs con­nected together. Each low-to-high transition on the
clock input shifts data one place to the right and
entersintoQA,thelogicNANDofthe twodata inputs
(A ⋅ B), the data that existed before the rising clock
edge. A low level on the clear input overrides all
otherinputsand clearstheregister asynchronously,
forcingall Q outputslow.

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

October 1992

1/12

M54/M74HC164

INPUT AND OUTPUT EQUIVALENT CIRCUIT

TRUTH TABLE

INPUTS OUTPUS

CLEAR CLOCK

LXXXLL
H X X NO CHANGE
H L X L QAn
H X L L QAn
H H H H QAn

X:Don’tCare
QAn- QGn : The levelof QA -QG,respectively. before themost-recent transition ofth clock.

SERIAL IN

AB

QA QB ............ QH

............

............

............

............

L

QGn
QGn
QGn

LOGI C DIAG RAM

2/12

M54/M74HC164

PIN DESCRIPTION

IEC LOGIC SYMBOL

PIN No SYMBOL NAME AND FUNCTION

1, 2 A, B Data Inputs

3, 4, 5, 6,

QA to QH Outputs

10, 11, 12,

13

8 CLOCK Clock Input (LOW to

HIGH, Edge-triggered)
9 CLEAR Master Reset Input
7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

ABSOLU TE MAXIMU M RATINGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethose values beyond whichdamage tothedevicemayoccur. Functional operation under these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

RECO MM ENDED O PERAT IN G C O NDITI O NS

Symbol Parameter Value Unit

V

V

T

t

V

r,tf

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

= 6 V 0 to 400

V

CC

V
V

o

C

o

C

3/12

M54/M74HC164

DC SPECIFICATIO NS

Symbol Parameter

V

V

V

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level

OH

Output Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Quiescent Supply

CC

Current

Test Conditions Value

V

(V)

CC

=25oC

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

T

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

2.0

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

=

V

I

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 4 40 80 µA

V

V

V

V

4/12