.HIGH SPEED
tPD= 15 ns(TYP.) ATVCC=5V
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) AT TA=25°C
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATING VOLTAGERANGE
VCC(OPR)= 2 V TO6 V
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS151
DESCRIPTION
The M54/74HC151 is ahighspeedCMOS8CHANNEL MULTIPLEXER fabricated in silicon gate
C2MOStechnology.It hasthesamehighspeedperformance of LSTTL combined with true CMOS low
powerconsumption.Itprovides, inonepackage,the
ability to select one bit of data from up to eight
sources. The HC151 can be used as a universal
functiongenerator to generate any logic functionof
fourvariables. Outputs YandW arecomplementary
selectiondepends on the address inputs A, B and
C. Thestrobeinput mustbetaken low toenablethis
device, when the strobe is highW output is forced
highand consequently Y output goes low. Allinputs
are equipped with protection circuits against static
discharge and transient excess voltage.
M54HC151
M74HC151
8 CHANNEL MULTIPLEXER
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 151F1R M74H C151M1R
M74HC 151B1R M74HC1 51C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC =
No Internal
Connection
1/11
M54/M74HC151
TRUTH TABLE
CBAS
XXXHLH
LLLLD0D0
L L H L D1 D1
LHLLD2D2
LHHLD3D3
H L L L D4 D4
H L H L D5 D5
H H L L D6 D6
H H H L D7 D7
INPUTS OUTPUTS
SELECT STROBE
YW
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
4, 3, 2, 1,
15, 14, 13,
12
5 y Multiplexer Output
6 w Complementary
7 STROBE StrobeInput
11, 10, 9 A, B, C Select Inputs
8 GND Ground (0V)
16 V
D0 to D7 Multiplexer Inputs
Multiplexer Output
CC
Positive Supply Voltage
IEC LOGIC SYMBOL
2/11
LOGI C DIAGRAM
M54/M74HC151
ABSOLU TE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevicemayoccur.Functional operation under these conditionisnotimplied.
(*)500 mW:≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
3/11
M54/M74HC151
RECO MM ENDED OPERAT I N G C O NDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 4 40 80 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
4/11
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