SGS Thomson Microelectronics M74HC132 Datasheet
QUAD 2-INPUT SCHMITT NAND GATE
.HIGH SPEED
tPD= 11 ns (TYP.) ATVCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.OUTPUTDRIVE CAPABILITY
10 LSTTL LOADS
.HIGH NOISE IMMUNITY
VH(TYP.) = 0.9 V AT VCC=5V
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS132
M54HC132
M74HC132
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 132F1R M74H C132M1 R
M74HC 132B1R M74HC1 32C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC132 isa highspeedCMOSQUAD2INPUTSCHMITTNAND GATEfabricated in silicon
gate C2MOS technology. It has the same high
speed performance of LSTTL combined with true
CMOS low power consumption. Pin configuration
and function are identical to those of the
M54/74HC00.
The hysterisis characteristics (around 20 % VCC)of
all inputs allow slowly changing inputsignals to be
transformed into sharply defined jitter-free output
signals. All inputs areequipped with protection circuits against static discharge and transient excess
voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
December1992
NC =
No Internal
Connection
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M54/M74HC132
TRUTH TABLE
IEC LOGIC SYMBOL
ABY
LLH
LHH
HLH
HHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
BLOCK DIAGRAM LOGIC DIAGR AM/WAVEFORM
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
T
stg
T
AbsoluteMaximumRatingsarethosevalues beyondwhichdamage tothedevicemayoccur.Functional operationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
D
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
o
C
o
C
M54/M74HC132
RECO MM ENDED OPERAT IN G CO NDITIO NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time No Limits
Test Conditions Value
T
P
N
H
High Level
Threshold
Voltage
Low Level
Threshold
Voltage
Hysteresis
Voltage
=25oC
V
(V)
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.0 1.25 1.5 1.0 1.5 1.0 1.5
4.5 2.3 2.7 3.15 2.3 3.15 2.3 3.15
6.0 3.0 3.5 4.2 3.0 4.2 3.0 4.2
2.0 0.3 0.65 0.9 0.3 0.9 0.3 0.9
4.5 1.13 1.6 2.0 1.13 2.0 1.13 2.0
6.0 1.5 2.3 2.6 1.5 2.6 1.5 2.6
2.0 0.3 0.6 1.0 0.3 1.0 0.3 1.0
4.5 0.6 1.1 1.4 0.6 1.4 0.6 1.4
-40 to 85oC
74HC
-55 to 125oC
6.0 0.8 1.2 1.4 0.8 1.7 0.8 1.7
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
V
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