
.HIGH SPEED
tPD= 22 ns(TYP.) AT VCC=5V
.LOWPOWERDISSIPATION
ICC=4µA(MAX.) at TA=25°C
.HIGH NOISEIMMUNITY
VNIH= VNIL= 28 % VCC (MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICALOUTPUT IMPEDANCE
|IOH|=IOL=4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2 V to 6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS131
M54HC131
M74HC131
3 TO 8 LINE DECODER/LATCH
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 131F1R M74H C131M1R
M74HC 131B1R M74HC1 31C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC131 is a high speed CMOS 3 TO 8
LINE DECODER/LATCH fabricated in silicon gate
C2MOS technology.
It has the same high speed performance of LSTTL
combined withtrue CMOSlowpower consumption.
This deviceis a DECODER/LATCHcapable of selectingarbitrarilyoneof eight outputsbythreebinary
inputs A,B, and C, in thiscase, the selected output
is at logic”low”.
Also, whenENABLE input G1is setlowor ENABLE
inputG2is sethigh,selection isinhibited regardless
of otherinputsignals and all theoutputsare athigh.
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
October 1992
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M54/M74HC131
INPUT AND OUTPUT EQUIVALENT CIRCUIT
IEC LOGIC SYMBOL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 2, 3 A, B, C Data Inputs
4 CLK Clock Input (LOW to
HIGH, Edge-triggered)
5 G2 Enable (Active LOW)
6 G1 Enable (Active HIGH)
9, 10, 11,
12, 13, 14,
15, 7
8 GND Ground (0V)
16 V
Y0, Y1, Y2,
Y3, Y4, Y5,
Y6, Y7
CC
Data Outputs
Positive Supply Voltage
TRUTH TABLE
INPUTS
CLK
XXHXXXHHHHHHHH
XLXXXXHHHHHHHH
L H L X X X Outputs corresponding to stored address L: all others H
2/12
ENABLE SELECT
G1 G2 C B A Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
HLLLLLHHHHHHH
HLLLHHLHHHHHH
HLLHLHHLHHHHH
HLLHHHHHLHHHH
HLHLLHHHHLHHH
HLHLHHHHHHLHH
HLHHLHHHHHHLH
HLHHHHHHHHHHL
OUTPUTS

M54/M74HC131
ABSOLU TE M AXI MU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyondwhichdamage tothedevice mayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300mWby 10mW/oC: 65oCto85oC
RECO MM ENDED O PERAT IN G CONDI TIONS
Symbol Parameter Value Unit
V
CC
V
I
V
O
T
op
t
r,tf
Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
L
Supply Voltage 2 to 6 V
Input Voltage 0 to V
Output Voltage 0 to V
Operating Temperature: M54HC Series
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
o
C
o
C
V
V
o
C
o
C
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