SGS Thomson Microelectronics M74HC109 Datasheet

DUAL J-K FLIP FLOP WITHPRESET AND CLEAR
.HIGH SPEED
f
= 63 MHz (TYP.) AT VCC=5V
MAX
.LOWPOWER DISSIPATION
ICC=2µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS109
DESCRIPTION
The M54/74HC109 is a highspeed CMOSDUAL J­K FLIP-FLOP WITH PRESET AND CLEAR fabri­cated in silicon gate C2MOStechnology.
It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption.
In accordance with the logic level on the J and K inputisdevicechangesstateonpositivegoingtran­sitionsof the clock pulse. CLEAR and PRESETare independent ofthe clockandaccomplished bya low logic level on the corresponding input.
All inputs are equipped with protection circuits against static discharge and transient excess volt­age.
M54HC109 M74HC109
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 109F1R M74H C109M1 R M74HC 109B1R M74HC1 09C1R
PIN CONNECTIONS(top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
December1992
NC = No Internal Connection
1/11
M54/M74HC109
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 15 1CLR, 2CLR Asynchronous Reset
Direct Input
2, 4, 3, 13 1J, 2J, 1K,2KSyncronous Inputs;
Flip-flops 1 and 2 4, 12 1CK, 2CK Clock Input 5, 11 1PR, 2PR Asynchronous Set Direct
Input (Active LOW) 6, 10 1Q, 2Q True Flip-flop Outputs
7, 9 1Q, 2Q Complement Flip-flop
Outputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
LOGI C CI RCU I T
IEC LOGIC SYMBOL
TRUTH TABLE
INPUTS OUTPUTS
CLR PR J K CK Q Q
L H X X X L H CLEAR
H L X X X H L PRESET
LLXXXHH H H L H Qn Qn NO CHANGE HHLL LH HHHH HL H H H L Qn Qn TOGGLE H H X X Qn Qn NO CHANGE
X =DON’TCARE
2/11
FUNCTION
M54/M74HC109
ABSOLU TE MAXI MU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
I
or I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevalues beyondwhichdamage tothedevicemayoccur. Functional operationunder theseconditionisnotimplied. (*)500 mW: 65oC derate to300 mW by 10mW/oC: 65oCto85oC
RECO MM ENDED OPERATIN G C ONDI TI O NS
Symbol Parameter Value Unit
V
CC
V
I
V
O
T
op
t
r,tf
Supply Voltage -0.5 to +7 V DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V DC Input Diode Current ± 20 mA DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW Storage Temperature -65 to +150 Lead Temperature (10 sec) 300
Supply Voltage 2 to 6 V Input Voltage 0 to V Output Voltage 0 to V Operating Temperature: M54HC Series
M74HC Series
CC CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
o
C
o
C
V V
o
C
o
C
3/11
M54/M74HC109
DC SPECIFICA TIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC 74HC
-55 to 125oC 54HC
Unit
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 2 20 40 µA
V
V
V
V
4/11
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