SGS Thomson Microelectronics M74HC09RM13TR, M74HC09M1R, M74HC09B1R, M74HC09TTR Datasheet

M74HC09

QUAD 2-INPUT AND GATE (OPEN DRAIN)

■ HIGH SPEED:

t

= 7ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 09

DESCRIPTION

The M74HC09 is an high speed CMOS QUAD
2-INPUT OPEN DRAIN AND GATE fabricated
with silicon gate C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer output , which enables high noise
immunity and stable output.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC09B1R

SOP M74HC09M1R M74HC09RM13TR

TSSOP M74HC09TTR

All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8August 2001

M74HC09

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

ABY

LLL

LHL
HLL
HHZ

Z : High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

P

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Positive Supply Voltage

-0.5 to +7 V
V
V

± 20 mA
± 20 mA
± 25 mA
± 50 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/8

V

V

V

T

t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V
V

CC
CC

= 4.5V
= 6.0V

2 to 6 V

CC
CC

-55 to 125 °C
0 to 1000 ns

0 to 500 ns
0 to 400 ns

V
V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
Output Leakage

OZ

Current
Quiescent Supply

CC

Current

M74HC09

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

6.0

6.0

6.0

IO=20 µA
I

=20 µA

O

I

=20 µA

O

I

=4.0 mA

O

I

=5.2 mA

O

= VCC or GND

V

I

VI = VIH or V

IL

VO = VCC or GND

= VCC or GND

V

I

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40

-40 to 85°C -55 to 125°C

± 0.1 ± 1 ± 1 µA

±0.5 ± 5 ± 10 µA

11020µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

AC ELECTRICAL CHARACTERISTICS (C

Test Condition Value

Symbol Parameter

t

t

t

Output Transition

THL

Time

Propagation Delay

PLZ

Time

Propagation Delay

PZL

Time

V

CC

(V)

2.0 30 75 95 110

6.0 7131619

2.0

= 1 KΩ

R

L

6.0 7131619

2.0
R

= 1 KΩ

L

6.0 7131619

= 50 pF, Input tr = tf = 6ns)

L

T

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

10 75 95 110

20 75 95 110

-40 to 85°C -55 to 125°C

Unit

ns4.5 8151922

ns4.5 8151922

ns4.5 8151922

3/8

M74HC09

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

C

C

C

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance (note 1)5.0 6.5 pF

5.0 5101010pF

5.0 10 pF

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

TEST CIRCUIT

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

CL = 50pF or equivalent (in cludes jig and probe capaci tance)

= Z

R

of pulse generator (typically 50Ω)

T

OUT

WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)

4/8

M74HC09

Plastic DIP-14 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065
b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335
e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100

P001A

5/8

M74HC09

SO-14 MECHANICAL DATA

DIM.

A 1.75 0.068

a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

6/8

PO13G

M74HC09

TSSOP14 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0° 8°0° 8°

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

1

0080337D

7/8

M74HC09

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mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.

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