SGS Thomson Microelectronics M74HC03 Datasheet

QUAD 2-INPUT OPEN DRAIN NAND GATE

.HIGH SPEED

tPZ= 5 ns (TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.HIGH NOISE IMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTLLOADS

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATING VOLTAGE RANGE

VCC(OPR)= 2 V TO 6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS03

M54HC03
M74HC03

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 03F1R M74H C03M1R
M74HC 03B1R M74HC0 3C1R

(CeramicPackage)

(Chip Carrier)

F1R

C1R

DESCRIPTION

The M54/74HC03 is a high speedCMOS QUAD2­INPUTOPENDRAINNANDGATEfabricated insili­con gate C2MOS technology.

It has the same high speed performance of LSTTL
combined withtrue CMOSlow power consumption.

The internal circuitis composedof 3 stages includ­ing buffer output, which gives high noise immunity
and stableoutput. This device can, with an external
pull-up resistor,beusedinwiredANDconfiguration.
This device can be also used as a led driver and in
any other application requiring acurrentsink. All in­puts are equipped with protection circuits against
staticdischarge and transient excessvoltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN CONNECTIONS(top view)

January 1993

NC =
No Internal
Connection

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M54/M74HC03

TRUTH TABLE

ABY

LLZ

LHZ
HLZ
HHL

Z =HIGHIMPEDANCE

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

CIR CUI T DIA GR AM

IEC LOGIC SYMBOL

VCC= Pin14
GND = Pin 7
open–drain outputs

ABSOLU TE MAXIMU M RAT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

I

or I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derateto300 mWby 10mW/oC: 65oCto85oC

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Sink Current Per Output Pin + 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

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M54/M74HC03

RECO MM ENDED OPERATI N G C ONDI TIONS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIF ICATIO NS

Symbol Parameter

V

IH

V

V

OL

I

I

OZ

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

Low Level Output
Voltage

Input Leakage

I

Current
Output Leakage

Current
Quiescent Supply

2.0
V

=

I

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

6.0

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

VI=VIHor V

IL

VO=VCCor GND

0.0 0.1 0.1 0.1

±0.5 ±5 ±10 µA

6.0 VI=VCCor GND 1 10 20 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

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