.HIGH SPEED
tPD= 6 ns (TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUTSDRIVE CAPABILITY
10 LSTTL LOADS
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2V TO 6 V
.PIN AND FUNCTION COMPATIBLE
WITH 54/74LS00
.SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
M54HC00
M74HC00
QUAD 2-INPUT NAND GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 00F1R M74H C00M1R
M74HC 00B1R M 74HC00C1R
F1R
(CeramicPackage)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HC00 isa high speed CMOS QUAD 2INPUT NAND GATE fabricated in silicon gate
C2MOStechnology. Ithasthe samehighspeedperformance ofLSTTL combined with true CMOS low
power consumption. The internal circuit is composedof 3 stagesincluding bufferoutput,whichenables high noise immunity and stable output. All
inputs are equipped with protection circuits against
staticdischarge and transient excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
December1992
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M54/M74HC00
TRUTH TABLE
ABY
LLH
LHH
HLH
HHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC CIR CUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE M AXIMU M R AT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevicemayoccur.Functionaloperationunder these condition isnotimplied.
(*)500 mW:≅65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HC00
RECO MM ENDED OPERAT IN G CO NDI TIONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
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