SGS Thomson Microelectronics M58WR064ET, M58WR064EB Datasheet

64 Mbit (4Mb x 16, Multiple Bank, Burst)

FEATURES SUMMARY

■ SUPPLY VOLTAGE

= 1.65V to 2.2V for Program, Erase and

–V

Read –V –V

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read

– Random Access: 70, 80, 100 ns

■ PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bott o m location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up – Any combination of blocks can be locked –WP

■ SECURITY

– 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

= 1.65V to 3.3V for I/O Buffers

DDQ

= 12V for fast Program (optional)

mode

others

for Block Lock-Down

M58WR064ET

M58WR064EB

1.8V Supply Flash Memory

Figure 1. Package

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h – Top Device Code, M58WR064ET: 8810h – Bottom Device Code, M58WR064EB: 8811h

1/82February 2003

M58WR064ET, M58WR064EB

SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 3. VFBGA Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 2. Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 4. Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Address Inputs (A0-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Latch Enable (L). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Clock (K).. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Wait (WAIT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

DDQ

Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

SSQ

BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Address Latch.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 4. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

COMMAND INTERFACE - STANDARD COMMANDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Read Electronic Signature Comma nd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Clear Status Register Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Program/Erase Suspend Comm and . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/82

M58WR064ET, M58WR064EB

Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Set Configuration Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Lock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Unlock Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Block Lock-Down Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Table 5. Standard Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 6. Electronic Signature Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 5. Security Block and Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS. . . . . . . . . . . . . . . . . . . . . . . . . 18

Bank Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Quadruple Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Enhanced Factory Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Program Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Exit Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Quadruple Enhanced Factory Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Setup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Load Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Program and Verify Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Exit Phase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Table 7. Factory Program Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

STATUS REGISTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program/Erase Controller Status Bit (SR7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22

Erase Suspend Status Bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Erase Status Bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program Status Bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Status Bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Program Suspend Status Bit (SR2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23

Block Protection Status Bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Bank Write/Multiple Word Program Status Bit (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 8. Status Register Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

CONFIGURATION REGISTER. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5

Read Select Bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

X-Latency Bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wait Polarity Bit (CR10). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Data Output Configuration Bit (CR9). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wait Configuration Bit (CR8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Burst Type Bit (CR7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Valid Clock Edge Bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Wrap Burst Bit (CR3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Burst length Bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 9. Configuration Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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M58WR064ET, M58WR064EB

Table 10. Burst Type Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Figure 6. X-Latency and Data Output Configuration Exampl e . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 7. Wait Configuration Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29

READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Asynchronous Read Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Synchronous Burst Read Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Single Synchronous Read Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31

DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 11. Dual Operations Allowed In Other Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 12. Dual Operations Allowed In Same Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Lock-Down State. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32

Table 13. Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 14. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 34

MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Table 15. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 16. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 8. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 9. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 17. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Table 18. DC Characteristics - Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Table 19. DC Characteristics - Voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38

Figure 10. Asynchronous Random Access Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . 39

Figure 11. Asynchronous Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40

Table 20. Asynchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Figure 12. Synchronous Burst Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Figure 13. Single Synchronous Read AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Figure 14. Clock input AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Table 21. Synchronous Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Figure 15. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 22. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Figure 16. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 23. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48

Figure 17. Reset and Power-up AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Table 24. Reset and Power-up AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

4/82

M58WR064ET, M58WR064EB

PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Figure 18. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch , Bottom View Package Out line. . . 50

Table 25. VFBGA56 - 7.7x9mm, 8x7 ball array, 0.75mm pitch, Packa ge Mechan ical Data . . . . . . 50

Figure 19. VFBGA56 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 51

Figure 20. VFBGA56 Daisy Chain - PCB Connection Proposal (Top view through package) . . . . 52

PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 26. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 27. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 28. Top Boot Block Addresses, M58WR064ET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 29. Bottom Boot Block Addresses, M58WR064EB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

APPENDIX B. COMMON FLASH INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 30. Query Structure Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Table 31. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58

Table 32. CFI Query System Interface Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 33. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59

Table 34. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

Table 35. Protection Register Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61

Table 36. Burst Read Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 37. Bank and Erase Block Region Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 38. Bank and Erase Block Region 1 Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Table 39. Bank and Erase Block Region 2 Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Figure 21. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Figure 22. Double Word Program Flowchart and Pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . 66

Figure 23. Quadruple Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . 67

Figure 24. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 68

Figure 25. Block Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Figure 26. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 70

Figure 27. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Figure 28. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . 72

Figure 29. Enhanced Factory Program Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73

Enhanced Factory Program Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Figure 30. Quadruple Enhanced Factory Program Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Quadruple Enhanced Factory Program Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

APPENDIX D. COMMAND INTERFACE STATE TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

Table 40. Command Interface States - Modify Table, Next State. . . . . . . . . . . . . . . . . . . . . . . . . . 77

Table 41. Command Interface States - Modify Table, Next Output. . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 42. Command Interface States - Lock Table, Next State . . . . . . . . . . . . . . . . . . . . . . . . . . .79

Table 43. Command Interface States - Lock Table, Next Output . . . . . . . . . . . . . . . . . . . . . . . . . . 80

REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81

Table 44. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81

5/82

M58WR064ET, M58WR064EB

SUMMARY DESCRIPTION

The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V V supply for the circuitry and a 1.65V to 3.3V V supply for the Input/Output pins. An opt ional 12V V

power supply is provided to speed up custom-

er programming. The device features an asymmet rical block archi-

tecture. M58WR06 4E has a n array of 135 blocks, and is divided into 4 Mbit banks. There are 15 banks each containing 8 main blocks of 32 KWords, and one parameter bank containing 8 parameter blocks of 4 KWords and 7 m ain blocks of 32 KWords. The Multiple Bank Architecture allows Dual Operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory maps are shown in Figure 4. The Parameter Blocks are located at the top of the memory address space for the M58WR064ET, and at the bottom for the M58WR064EB.

Each block can be erased separately. Erase can be suspended, in order to perform program in any other block, and then resum ed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage V

. There are two Enhanced Factory

programming commands available to speed up programming.

Program and Erase command s are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in t he Status Register. The command set required to

DDQ

control the memory is consistent with JEDEC standards.

The device supports synchronous burst read and asynchronous read from all blocks of the memory array; at power-up the device is configured for asynchronous read. In synchronous burst mode, data is output on each clock cycle at frequencies of up to 54MHz.

The device features an Aut oma tic Standby m ode. When the bus is inactive during Asynchronous Read operations, the device aut oma tically switches to the Automatic Standby m ode. In this condition the power consumption is reduced to the standby value I

and the outputs are still driven.

DD4

The M58WR064E features an instant, individual block locking scheme that allo ws any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP ≤ V

all blocks are protected against

PPLK

program or erase. All blocks are locked at PowerUp.

The device includes a Protection Register and a Security Block to increase the protec tion of a s ys-

tem’s design. The Protection Register is divided into two segments: a 64 bit segm ent containin g a unique device number written by ST, and a 128 bit segment One-Time-Programmable (OTP) by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Figure 5, shows the Security Block and Protection Register Memory Map.

The memory is offered in a VFBGA56, 7.7 x 9 mm

0.75 mm ball pitch package and is supplied with all the bits erased (set to ’1’).

6/82

M58WR064ET, M58WR064EB

Figure 2. Logic Diagram Table 1. Signal Names

A0-A21 Address Inputs

A0-A21

Data Input/Outputs, Command Inputs

Chip Enable Output Enable

DDQVPP

DQ0-DQ15

E G

DQ0-DQ15

W RP

M58WR064ET M58WR064EB

WAIT

WP KClock L WAIT Wait V

DDQ

SSQ

AI05587

V V

SSQ

Write Enable Reset Write Protect

Latch Enable

Supply Voltage Supply Voltage for Input/Output

Buffers Optional Supply Voltage for

Fast Program & Erase Ground Ground Input/Output Supply

NC Not Connected Internally

7/82

M58WR064ET, M58WR064EB

Figure 3. VFBGA Connections (To p view thro ugh packa ge)

87654321

C A2

D A1

A13

A15

DDQ

DQ7 V

A8A11

A9A12

A10

A14 WAIT A16 WP

DQ15

DQ14 DQ11 DQ10 DQ9 DQ0 G

SSQ

A20

A21

DQ6

DQ13

DQ5 V

K RP

L W

DQ4 DQ2 E A0

DQ12

DQ3

A18

DQ1

DDQ

A5A17

A7A19

DQ8

SSQ

Table 2. Bank Architecture

Number Bank Size Parameter Blocks Main Blocks

Parameter Bank 4 Mbits 8 blocks of 4 KWords 7 blocks of 32 KWords

Bank 1 4 Mbits - 8 blocks of 32 KWords Bank 2 4 Mbits - 8 blocks of 32 KWords Bank 3 4 Mbits - 8 blocks of 32 KWords

----

Bank 14 4 Mbits - 8 blocks of 32 KWords Bank 15 4 Mbits - 8 blocks of 32 KWords

8/82

----

AI06189

----

Figure 4. Me m ory Map

M58WR064ET, M58WR064EB

Bank 15

Bank 3

Bank 2

Bank 1

Parameter

Bank

M58WR064ET - Top Boot Block

Address lines A21-A0

000000h

007FFFh

038000h

03FFFFh

300000h

307FFFh

338000h

33FFFFh

340000h

347FFFh

378000h

37FFFFh

380000h

387FFFh

3B8000h

3BFFFFh

3C0000h

3C7FFFh

3F0000h 3F7FFFh 3F8000h

3F8FFFh

3FF000h

3FFFFFh

32 KWord

4 KWord

8 Main Blocks

7 Main Blocks

8 Parameter

Blocks

Parameter

Bank

Bank 1

Bank 2

Bank 3

Bank 15

M58WR064EB - Bottom Boot Block

Address lines A21-A0

000000h

000FFFh

007000h

007FFFh

008000h

00FFFFh

038000h

03FFFFh

040000h

047FFFh

078000h

07FFFFh

080000h

087FFFh

0B8000h 0BFFFFh 0C0000h

0C7FFFh

0F8000h

0FFFFFh

3C0000h

3C7FFFh

3F8000h

3FFFFFh

4 KWord

4KWord

32 KWord

8 Parameter

Blocks

7 Main Blocks

8 Main Blocks

AI06971b

9/82

M58WR064ET, M58WR064EB

SIGNAL DESCRIPTIONS

See Figure 2 Logic Diagram and Table 1,Signal Names, for a brief overview of the signals connected to this device.

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine.

Data Input/Output (DQ0-DQ15). The Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Bus Write operation.

Chip Enable (E

vates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is

and Reset is at VIH the device is in active

at V

mode. When Chi p E nable i s at V deselected, the outputs are high impedan ce and the power consumption is reduced to the stand-by level.

Output Enable (G

data outputs during the Bus Read operation of the memory.

Write Enable (W

Bus Write operation of the memory’s Command Interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable whichever occurs first.

Write Protect (WP

that gives an additional hardware protection for each block. When Write Protect is at V Down is enabled and the prote ction status of t he Locked-Down blocks cannot be changed. When Write Protect is at V and the Locked-Down blocks can be locked or unlocked. (refer to Table 13, Lock Status).

Reset (RP

ware reset of the memory. W hen Reset is at V the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the Reset Supply Current I Table 2, DC Characteristics - Currents for the value of I

DD2.

state and the Configuration Register is reset. When Reset is at V eration. Exiting reset mode the device enters asynchronous read mod e, but a negative transition of Chip Enable or Lat ch E nable is required to ensure valid data outputs.

The Reset pin can be interfaced with 3V logic without any additional circuitry . It can be tied to V (refer to Table 19, DC Characteristics).

Latch Enable (L

dress bits on its rising edge. The address latch is transparent when Latch Enable is at

). The Chip Enable input acti-

the memory is

). The Output Enable controls

). The Write Enable controls the

). Write Protect is an input

, the Loc k-

, the Lock-Down is disabled

). The Reset input provides a hard-

. Refer to

DD2

After Reset all blocks are in the Locked

, the device is in normal op-

RPH

). Latch Enable l atches the ad -

and it is inhibited whe n Latch Enable is at

. Latch Enable can be kept Low (also at

board level) when t he Latch Enable func tion is not required o r sup ported.

Clo c k (K). The clock input synchronizes the memory to the microcontroller during synchronous read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at V don't care during asynchronous read and in write operations.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high impedance when Chip Enable is at V

or Reset is at VIL.

It can be configured to be active during the wait cycle or one clock cycle in advance. The WAIT signal is not gated by Output Enable.

Supply Voltage . VDD provides the power

supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program and Erase).

Supply Voltage. V

DDQ

provides the power

DDQ

supply to the I/O pins and enables all Outputs to be powered independently from V tied to V

Program Supply Vol t age . VPP is both a

or can use a separate supply.

. V

control input and a power supply pin. The two functions are selected by the voltage range applied to the pin.

is kept in a low voltage range (0V to V

If V

is seen as a control input. In this case a volt-

age lower than V against program or erase, whi le V

gives an absolute protection

PPLK

ables these functions (see Tables 18 and 19, DC Characteristics for the relevant values). V sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect and program or erase op-

erations continue.

is in the rang e of V

If V

supply pin. In this condition V

it acts as a power

PPH

must be stable un-

til the Program/Erase algorithm is completed.

Ground. VSS ground is the reference for t he

core supply. It must be connected to the system ground.

SSQ

Ground. V

ground is the reference for

SSQ

the input/output circuitry driven by V must be connected to V

Note: Each device in a system should have V

DD, VDDQ

and VPP decoupled wi th a 0.1 µF ce-

ramic capacitor close to the pin (high frequency, inherently low inductance capacitors should be as close as possible to the pack-

. Clock is

DDQ

> V

DDQ

can be

DDQ

en-

PP1

is only

. V

SSQ

)

10/82

M58WR064ET, M58WR064EB

age). See Figure 9, AC Measurement Load Circuit. The PCB trace widths should be sufficient

BUS OPERATIONS

There are six standard bus operations that control the device. These are Bus Read , Bus Write, Address Latch, Output Disable, Standby and Reset. See Table 3, Bus Operations, for a summary.

Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect Bus Write operations.

Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

in order to perform a

read operation. The Chip Enable input s hould be used to enable the device. Out put Enable should be used to gate data onto the output. The data read depends on the previous command written to the memory (see Command Interface section). See Figures 10, 1 1, 12 and 13 Read AC Waveforms, and Tables 20 and 21 Read AC Characteristics, for details of when the output becomes valid.

Bus Write. Bus Write operations write Commands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

. Commands, Input Data and

with

Addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. The addresses can also be latched prior to the write operation by toggling Latc h Enable. In this case

to carry the re quired VPP program and erase currents.

the Latch Enable shoul d be t ied to V

during the

bus write operation. See Figures 15 and 16, Write AC Waveforms, and

Tables 22 and 23, Write AC Characteristics, for details of the timing requirements.

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch Enable must be at V

during address latch opera-

tions. The addresses are latched on the rising edge of Latch Enable.

Output Disa bl e . The outputs are high impedance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by when Chip Enable and Reset are at V

. The pow-

er consumption is reduced to the stand-by level and the outputs are s et to high impedan ce, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to V

during a pro-

gram or erase operation, the device enters Standby mode when finished.

Reset. During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at V

The power consumption is reduced to the Standby level, independently from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to V

during a Program or Erase, this operation is

aborted and the memory content is no longer valid.

Table 3. Bus Operations

Operation E G W L RP

Bus Read Bus Write Address Latch

Output Disable Standby Reset X X X X

Note: 1. X = Don’t care.

2. L

can be tied to VIH if the valid address has been previo usly latched.

3. Depends on G

4. WAIT signal pol arity is conf i gured usi ng t he Set Confi guration Regi ster comm and.

XXX

(2)

WAIT

(4)

Hi-Z Hi-Z Hi-Z Hi-Z

DQ15-DQ0

Data Output

Data Input

Data Output or Hi-Z

Hi-Z

(3)

11/82

M58WR064ET, M58WR064EB

COMMAND INTERFACE

All Bus Write operations t o the me mory are in terpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution of the Program and Erase commands. The Program/Erase Controller provides a S tatus Register whose output may be read at any ti me to monitor the progress or the result of the operation.

The Command Interface is reset to read mode when power is first applied, when exiting from Reset or whenever V

is lower than V

mand sequences must be followed exactly. Any invalid combination of commands will be ignored.

Refer to Table 4, Command Codes and Appendix D, Tables 40, 41, 42 and 43, Command I nterface States - Modify and Lock Tables, for a summary of the Command Interface.

The Command Interface is split into two type s of commands: Standard commands and Factory Program commands. The following sections explain in detail how to perform each command.

LKO

. Com-

Table 4. Command C odes

Hex Code Command

01h Block Lock Confirm 03h Set Configuration Register Confirm 10h Alternative Program Setup 20h Block Erase Setup 2Fh Block Lock-Down Confirm 30h Enhanced Factory Program Setup 35h Double Word Program Setup 40h Program Setup 50h Clear Status Register 56h Quadruple Word Program Setup

60h

70h Read Status Register

75h

80h Bank Erase Setup

Block Lock Setup, Block Unlock Setup, Block Lock Down Setup and Set Configuration Register Setup

Quadruple Enhanced Factory Program Setup

90h Read Electronic Signature 98h Read CFI Query B0h Program/Erase Suspend

C0h Protection Register Program

Program/Erase Resume, Block Erase

D0h

FFh Read Array

Confirm, Bank Erase Confirm, Block Unlock Confirm or Enhanced Factory Program Confirm

12/82

COMMAND INTERFACE - STANDARD COMMANDS

The following commands are the basic commands used to read, write to and configure the device. Refer to Table 5, Standard Commands, in conjunction with the following text descriptions.

Read Array Command

The Read Array comm and returns the addressed bank to Read Array mode. One Bus Write cycle is required to issue the Read Array command and return the addressed bank to Read Array mode. Subsequent read operations will read the addressed location and output t he data. A Read Array command can be issued in one bank while programming or erasing in another bank. However if a Read Array command is issued to a bank currently executing a Program or Erase operation the command will be e xecuted but t he output da ta is not guaranteed.

Read Status Register Command

The Status Register indi cates when a Program or Erase operation is complete and the success or failure of operation itself. Issue a Read Status Register command to read the Status Register content. The Read Status Register com man d c an be issued at any time, even during Program or Erase operations.

The following read operations output the content of the Status Register of the addressed bank. The Status Register is latched on the falling edge of E or G signals, and can be read until E or G returns

. Either E or G must be toggled to update the

to V

latched data. See Table 8 for the description of the Status Register Bits. This mode supports asynchronous or single synchronous reads only.

Read Electronic Signature Command

The Read Electronic Signature command reads the Manufacturer and Device Codes, the Block Locking Status, the Protection Register, and the Configuration Register.

The Read Electronic Signature command consists of one write cycle to an address within one o f the banks. A subsequent Read ope ra tion in the same bank will output the Manufacturer Code, the Device Code, the protection Status of the blocks in the targeted bank, the Protection Register, or the Configuration Register (see Table 6).

If a Read Electronic Signature command is issued in a bank that is executing a Program or Erase operation the bank will go into Read Electronic Signature mode, subsequent Bus Read cycles will output the Electronic Sign ature data an d the Pr ogram/Erase controller will continue t o program or erase in the background. This mode supports asynchronous or single synchronous reads only, it does not support page mode or synchronous burst reads.

M58WR064ET, M58WR064EB

Read CFI Query Command

The Read CFI Query command is used to read data from the Common Flash Interface (CFI). The Read CFI Query Command consists of one Bus Write cycle, to an address within one of the banks. Once the command is issued subsequent Bus Read operations in the s ame bank read from the Common Flash Interface.

If a Read CFI Query command is issued in a bank that is executing a Program or Erase operation the bank will go into Read CFI Query mo de, subsequent Bus Read cycles will output the CFI data and the Program/Erase con troller will continue to Program or Erase in the background. This m ode supports asynchronous or single synchronous reads only, it does not support page mode or synchronous burst reads.

The status of the other banks is not affected by the command (see Table 11). After issuing a Read CFI Query command, a Read Array command should be issued to t he address ed bank to return the bank to Read Array mode.

See Appendix C, Common Flash Interface, Tables 30, 31, 32, 33, 34, 36, 37, 38 and 39 for details on the information contained in the Common Flash Interface memory area.

Clear Status Register Command

The Clear Status Register comm and c an b e us ed

to reset (set to ‘0’) error bits 1, 3, 4 and 5 in the Status Register. One bus write cycle is required to issue the Clear Status Register command. The Clear Status Register com man d do es not c ha nge the Read mode of the bank.

The error bits in the Status Regi ster do not automatically return to ‘0’ when a new command is issued. The error bits i n the Stat us Register should be cleared before attempting a new Program or Erase command.

Block Erase Command

The Block Erase com mand can be used to erase a block. It sets all the bits within the selected block to ’1’. All previous d ata in th e block is lost. If th e block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. The Block Erase command can be issued at any moment, regardless of whether the block has been programmed or not.

Two Bus Write cycles are required to issue the command.

■ The first bus cycle sets up the Erase command.

■ The second latches the block address in the

internal state machine and starts the Program/ Erase Controller.

13/82

M58WR064ET, M58WR064EB

If the second bus cycle is not Write Erase Confirm (D0h), Status Register bits 4 and 5 are set and the command aborts. Erase aborts if Reset turns to

. As data integrity cannot be guaranteed when

the Erase operation is aborted, the block must be erased again.

Once the command is issued the device outputs the Status Register data when any address within the bank is read. At the end o f the operation the bank will remain in Read Status Register mode until a Read A rray, Read CFI Query o r Read Electronic Signature command is issued.

During Erase operations the bank containing the block being erased will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend command, all other commands will be ignored. Refer to Dual Operations section for detailed information about simultaneous operations allowed in banks not being e rased. Typical Erase times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

See Appendix C, Figure 25, Block Erase Flowchart and Pseudo Code, for a suggested flowchart for using the Block Erase command.

Program Command

The memory array can be programmed word-byword. Only one Word in one bank can be programmed at any one time. Two bus write cycles are required to issue the Program Command.

■ The first bus cycle sets up the Program

command.

■ The second latches the Address and the Data to

be written and starts the Program/Erase Controller.

After programming has started, read operations in the bank being programmed output the Status Register content.

During Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend command. Refer to Dual Operations section for detailed information about simultaneous operations allowed in banks not bei ng programmed. Typical Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles .

Programming aborts if Reset goe s to V

. As data

integrity cannot be guaranteed when the program operation is aborted, the memory location must be reprogrammed.

See Appendix C, Figure 21, Program Flowchart and Pseudo Code, for the f lowchart for using the Program command.

Program/Erase Suspend Command

The Program/Erase Suspend command is used to pause a Program or Block Erase operation. A Bank Erase operation cannot be suspended.

One bus write cycle is required to issue t he Program/Erase command. O nce the Program/Erase Controller has paused bits SR7, SR6 and/ or SR2

of the Statu s Regist er will be s et to ‘1’. Th e command can be addressed to any bank.

During Program/Erase Suspend the Command Interface will accept the Program/Erase Resume, Read Array (cannot read the erase-suspended block or the program-suspended Word), Read Status Register, Read Electronic Signature and Read CFI Query commands. Additionally, if the suspend operation was E rase then the Clear status Register, Program, Block Lock, Block LockDown or Block Unlock commands will also be accepted. The block being erased may be protected by issuing the Block Lock, Block Lock-Down or Protection Register Program commands. Only the blocks not being erased may be read or programmed correctly. When the Program/Erase Resume command is issued the operation will complete. Refer to the Dual Operations section for detailed information about simultaneous operations allowed during Program/Erase Suspend.

During a Program/Erase Suspend, the device can be placed in standby mode by taking Chip Enable

. Program/Erase is aborted if Reset turns to

to V

See Appendix C, Figure 24 , Program Suspend & Resume Flowchart and Pseudo Code, and Figure 26, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/ Erase Suspend command.

Program/Erase Resu me Command

The Program/Erase Resume command can be used to restart the Program/Erase Controller after a Program/Erase Suspen d command has paused it. One Bus Write cycle is required to issue the command. The command can be written to any address.

The Program/Erase R esume command d oes not change the read m ode of the banks. If the s uspended bank was in Read Status Register, Read Electronic signature or Read CFI Query mode the bank remains in that m ode and outputs the corresponding data. If the bank was in Read Array mode subsequent read operations will output invalid data.

If a Program command is issued during a Block Erase Suspend, then the erase cannot be resumed until the programming operation has completed. It is possible to accumulate suspend operations. For example: su spend an erase operation, start a programming operation, suspend the

14/82

M58WR064ET, M58WR064EB

programming operation then read the array. See Appendix C, Figure 24, Program Su spend & Resume Flowchart and Pseudo Code, and Figure 26, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/Erase Resume command.

Protectio n R egist er Progr am C om m and

The Protection Register Program command is used to Program the 128 bit user O ne-Time-Programmable (OTP) segment of the Protection Register and the Protection Register Lock. The segment is programmed 16 bits at a time. When

shipped all bits in the segment are set to ‘1’. The user can only program the bits to ‘0’.

Two write cycles are required to issue the Protection Register Program command.

■ The first bus cycle sets up the Protection

■ The second latches the Address and the Data to

be written to the Protection Register and starts the Program/Erase Controller.

Read operations output the Status Register content after the programming has started.

The segment can be protected by programming bit 1 of the Protection Lock Register. Bit 1 of the Protection Lock Register also protects bit 2 of the Protection Lock Register. Programming bit 2 of the Protection Lock Register will result in a permanent protection of Parameter Block #0 (see Figure 5, Security Block and Protection Register Memory Map). Attempting to program a previously protected Protection Register will result in a Status Register error. The protection of the Protection Register and/or the Security Block is not reversible.

The Protection Register Program cannot be suspended. See Appendix C, Figure 28, Protection Register Program Flowchart and Pseudo Code, for a flowchart for using the Protection Register Program command.

Set Conf ig uration Regi s te r C om m and

The Set Configuration Register command is used to write a new value to the Burst Configuration Control Register which defines the burst length, type, X latency, Synchronous/Asynchronous Read mode and the valid Clock edge configuration.

Two Bus Writ e cycles a re required to i ssue the Set Configuration Register command.

■ The first cycle writes the setup command and

the address corresponding to the Configuration Register content.

■ The second cycle writes the Configuration

The Read mode of the banks is not modified when the Set Configuration Register command is issued.

The value for the Configuration Register is always presented on A0-A15. CR0 is on A0, CR1 on A1, etc.; the other address bits are ignored.

Block Lock Command

The Block Lock command is used to lock a block and prevent Program or Erase operations from changing the data in it. All blocks are locked at power-up or reset.

Two Bus Write cycles are required to issue the Block Lock command.

■ The first bus cycle sets up the Block Lock

command.

■ The second Bus Write cycle latc hes the block

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Table. 13 shows the Lock Status after issuing a Block Lock command.

The Block Lock bits are vo latile, once set they remain set until a hardware reset or power-down/ power-up. They are cleared by a Block Unlock command. Refer to the section, Block Locking, for a detailed explanation. See Appendix C, Figure 27, Locking Operations Flowchart and Pseudo Code, for a flowchart for using the Lock command.

Block Unlock Command

The Block Unlock command is used to unlock a block, allowing the block to be programmed or erased. Two Bus Write cycles are requ ired to issue the Block Unlock command.

■ The first bus cycle sets up the Block Unlock

command.

■ The second Bus Write cycle latc hes the block

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Table 13 shows the protection status after issuing a Block Unlock command. Refer to the section, Block Locking, for a detailed expla nation and A ppendix C, Figure 27, Locking Operations Flowchart and Pseudo Code, f or a flowchart for using the Unlock command.

Block Lock-Down Command

A locked or unlocked block can be locked-down by issuing the Block Lock-Down command. A lockeddown block cannot be programm ed or erased, or have its protection status changed when WP low, V

. When WP is high, V

the Lock-Down

IH,

function is disabled and the locked blocks can be individually unlocked by the Block Unlock command.

Two Bus Write cycles are required to issue the Block Lock-Down command.

■ The first bus cycle sets up the Block Lock

command.

15/82

M58WR064ET, M58WR064EB

■ The second Bus Write cycle latches the blo ck

address.

The lock status can be monitored for each block using the Read Electronic Signature command. Locked-Down blocks revert to the locked (and not locked-down) state when the device is reset on

power-down. Table. 13 shows the Lo ck Statu s after issuing a Block Lock-Down command. Refer to the section, Block Locking, for a detailed explanation and Appendix C, Fi gure 27, Locking Operations Flowchart and Pseudo Code, for a flowchart for using the Lock-Down command.

Table 5. Standard Commands

Bus Operations

Commands

Cycles

Op. Add Data Op. Add Data

Read Arra y 1+ Write BKA FFh Read Status Register 1+ Write BKA 70h Read Read Electro nic Signature 1+ Write BKA 90h Read Read CFI Query 1+ Write BKA 98h Read Clear Status Register 1 Write BKA 50h Block Erase 2 Wri t e Program 2 Write Program/E rase Su s pen d 1 Write X B0h

Program/Erase Resume 1 Write X D0h Protection Register Program 2 Write PRA C0h Write Set Configuration Register 2 Write CRD 60h Write

Block Loc k 2 Write Block Unlock 2 Wri te Block Loc k-Down 2 Write

Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,

QD=Query Dat a, BA=Bl ock Address, BK A= Ban k Address , PD= Program Data, PR A=Prot ectio n Regist er Addre ss, PRD =Prote ction Register Dat a, CRD=Configuration Regis ter Data.

2. Must be same bank as in the first cycle. The signature address es are listed i n T able 6.

3. Any address within the bank can be used.

1st Cycle 2nd Cycle

BKA or BA

BKA or WA

Read

(3)

20h Write BA D0h

40h or 10h Write WA PD

WA RD BKA BKA

BKA

PRA PRD CRD

BKA or BA BKA or BA BKA or BA

(3)

60h Write BA 01h 60h Write BA D0h 60h Write

(2)

SRD ESD

03h

2Fh

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M58WR064ET, M58WR064EB

Table 6. Electronic Signature Codes

Code Address (h) Dat a (h)

Manufacturer Code Bank Address + 00 0020

Device Code

Top Bank Address + 01 8810 Bottom Bank Address + 01 8811 Lock

0001

Unlocked 0000

Block Protection

Block Address + 02

Locked and Locked-Down 0003

Unlocked and Locked-Down 0002 Reserved Bank Address + 03 Reserved Configuration Register Bank Address + 05 CR

ST Factory Default

0006

Security Block Permanently Locked 0002 Protection Register Lock

OTP Area Permanently Locked 0004

Security Block and OTP Area Permanently

Locked

Bank Address + 80

Bank Address + 81 Bank Address + 84

0000

Unique Device

Number

Protection Register

Bank Address + 85 Bank Address + 8C

Note: CR=Con figurati on Register.

OTP Area

Figure 5. Security Block and Protection Register Memory Map

SECURITY BLOCK

Parameter Block # 0

8Ch

85h 84h

81h 80h

PROTECTION REGISTER

User Programmable OTP

Unique device number

Protection Register Lock 2 1 0

AI06181

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M58WR064ET, M58WR064EB

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

The Factory Program commands are used to speed up programming. They require V V

except for the Bank Eras e command which

PPH

also operates at V

= VDD. Refer to Table 7, Fac-

to be at

tory Program Commands, in conjunction with the following text descriptions.

The use of Factory Program comma nds requires certain operating conditions.

■ V

must be set t o V

(except for Bank Erase

PPH

command),

■ V

must be within operating range,

■ Ambient temperature, T

■ The targeted block must be unlocked.

must be 25°C ± 5°C,

Bank Erase Command

The Bank Erase command can be used to erase a bank. It sets all the bits within the selected bank to ’1’. All previous data in th e ban k is lo st. Th e B ank Erase command will igno re any protected blocks within the bank. If all blocks in the ba nk are protected then the Bank Erase operation will abort and the data in the bank wi ll not b e changed. The Status Register will not output any error.

Bank Erase operations can be p erformed at both

= V

and VPP = VDD.

PPH

Two Bus Write cycles are required to issue the command.

■ The first bus cycle sets up the Bank Erase

command.

■ The second latches the bank address in the

internal state machine and starts the Program/ Erase Controller.

If the second bus cycle is not Write Bank Erase Confirm (D0h), Status Register bits SR4 and S R5 are set and the command aborts. Erase aborts if Reset turns to V

. As data integrity cannot be

guaranteed when the Erase operation is aborted, the bank must be erased again.

Once the command is issued the device outputs the Status Register data when any address within the bank is read. At the end o f the operation the bank will remain in Read Status Register mode until a Read Array, Read CFI Query or Read Electronic Signature command is issued.

During Bank Erase operations the bank being erased will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored.

For optimum performance, Bank Erase commands should be limited to a maximum of 100 Program/Erase cycles per Block. After 100 Program/ Erase cycles the internal algorithm will still operate properly but some degradation in performance may occur.

Dual operations are not supported during Bank Erase operations and the command cannot be suspended.

Typical Erase times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

Double Word Program Command

The Double Word Program command improves the programming throughput by writing a page of two adjacent words in parallel. The two words must differ only for the address A0.

Three bus write cycles are neces sary to issue the Double Word Program command.

■ The first bus cycle sets up the Double Word

Program Command.

■ The second bus cycle latches the Address and

the Data of the first word to be written.

■ The third bus cycle latches the Address and the

Data of the second word to be written and starts the Program/Erase Controller.

Read operations in the bank bei ng programmed output the Status Register content after the programming has started.

During Double Word Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored. Dual operations are not supported during Double Word Program operations and the command cannot be suspended. Typical Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

Programming aborts if Reset goe s to V integrity cannot be guaranteed when the program operation is aborted, the memory locations m ust be reprogrammed.

See Appendix C, Figure 22, Double Word Program Flowchart and Pseudo Code, for the flowchart for using the Double Word Program command.

Quadruple Word Program Command

The Quadruple Word Program command improves the programming throughput by writing a page of four adjacent words in parallel. The four words must differ only for the addresses A0 and A1.

Five bus write cycles are necessary to issue the Quadruple Word Program command.

■ The first bus cycle sets up the Double Word

Program Command.

■ The second bus cycle latches the Address and

the Data of the first word to be written.

. As data

18/82

M58WR064ET, M58WR064EB

■ The third bus cycle latches the Address and the

Data of the second word to be written.

■ The fourth bus cycle latches the Address and

the Data of the third word to be written.

■ The fifth bus cycl e latches the Addres s and th e

Data of the fourth word to be written and starts the Program/Erase Controller.

Read operations to the bank being programmed output the Status Register content after the programming has started.

Programming aborts if Reset goe s to V

. As data

integrity cannot be guaranteed when the program operation is aborted, the memory locations mu st be reprogrammed.

During Quadruple Word Program operations the bank being programmed will only accept the Read Array, Read Status Register, Read Electronic Signature and Read CFI Query command, all other commands will be ignored.

Dual operations are not supported during Quadruple Word Program operations and the command cannot be suspended. Typi cal Program times are given in Table 14, Program, Erase Times and Program/Erase Endurance Cycles.

See Appendix C, Figure 23, Quadruple Word Program Flowchart and Pseudo Code, for the flowchart for using the Quadruple Word Program command.

Enhanced Factory Program Command

The Enhanced Factory Program command can be used to program large streams of dat a within any one block. It greatly reduces the total programming time when a large number of Words are written to a block at any one time.

Dual operations are not s upported during the Enhanced Factory Program operation an d the command cannot be suspended.

For optimum performance the Enhanc ed Factory Program commands should be limited to a maximum of 10 program/erase cycles per block. If this limit is exceeded the in ternal algorithm will c ont inue to work properly but some degradation in performance is possible. Typical Prog ram times are given in Table 14.

The Enhanced Factory Program command has four phases: the Setup Phase, the Program Phase to program the data to the memory, the Verify Phase to check that the data has been correctly programmed and reprogram if necessary a nd the Exit Phase. Refer to Table 7, Enhanced Factory Program Command and Figure 29, Enhanced Factory Program Flowchart.

Setup Phase. The Enhanced Factory Program command requires two Bus Write operations to initiate the command.

■ The first bus cycle sets up the Enhanced

Factory Program command.

■ The second bus cycle confirms the command.

The Status Register P/E.C. Bit 7 should be read to check that the P/E.C. is ready. After the confirm command is issued, read operations output the Status Register data. The read Status Register command must not be issued as it will be interpreted as data to program.

Program Phase. The Program Phase requires n+1 cycles, wher e n is the n umber of Words (refer to Table 7, Enhanced Factory Program Command and Figure 29, Enhanced Factory Program Flowchar t).

Three successive steps are required to issue and execute the Program Phase of the command.

1. Us e one Bus Write operation to latch the Start Address and the first Word to be programmed. The Status Register Bank Write Status bit SR0 should be read to check that the P/E.C. is ready for the next Word.

2. Each subsequent Word to be programmed is latched with a new Bus Write operation. The address can either remain the Start Address, in which case the P/E.C. increments the address location or the address can be incremented in which case the P/E.C. jumps to the new address. If any address that is not in the same block as the Start Address is given with data FFFFh, the Program Phase terminates and the Verify Phase begins. The Status Register bit SR0 should be read between each Bus Write cycle to check that the P/E.C. is ready for the next Word.

3. Finally, after all Words have been programmed, write one Bus Write operation with data FFFF h to any address outside the bl ock contain ing the Start Address, to terminate the programming phase. If the data is not FFFFh, the command is ignored.

The memory is now set to enter the Verify Phase. Verify Phase. Th e Verify Phase is s imilar to the

Program Phase in that all Words must be resent to the memory for them to be che cked against the programmed data. The Program/Erase Controller checks the stream of da ta with the data that was programmed in the Program Phase and reprograms the memory location if necessary.

Three successive steps are required to execute the Verify Phase of the command.

1. Us e one Bus Write operation to latch the Start Address and the first Word, to be verified. The Status Register bit SR0 should be read to check that the Program/Erase Controller is ready for the next Word.

19/82

M58WR064ET, M58WR064EB

2. Each subsequent Word to be verified is latched with a new Bus Write operation. The Words must be written in the same order as in the Program Phase. The address can remain the Start Address or be incremented. If any address that is not in the same block as the Start Address is given with data FFFFh, the Verify Phase terminates. Status Register bit SR0 should be read to check that the P/E.C. is ready for the next Word.

3. Finally, after all Words have been verified, write one Bus Write operation with data FFFFh to any address outside the block containing the Start Address, to terminate the Verify Phase.

If the Verify Phase is successfully completed the memory remains in Read Status Register mode. If the Program/Erase Controller fails to reprogram a given location, the error will be signaled in the Status Register.

Exit Phase. Status Register P/E.C. bit SR7 set to

‘1’ indicates that the device has ret urned to Read mode. A full Status Register check should be done to ensure that the block has been successfully programmed. See the s ect ion on the Status Register for more details.

Quadruple Enhanced Factory Program Command

The Quadruple Enhanced Factory Program command can be used to program one or more pages of four adjacent Words in parallel. The four Words must differ only for the addresses A0 and A1.

Dual operations are not supported during Quadruple Enhanced Factory Program operations and the command cannot be suspended.

The Quadruple Enhanced Factory Program command has four phases: the Setup Phase, the Load Phase where the data is loaded into the buffer, the combined Program and Verify Phase where the loaded data is programmed to the memory and then automatically checked and reprogrammed if necessary and the Exit Phase. Unlike the Enhanced Factory Program it is not necess ary t o resubmit the data for the Verify Phase. The Load Phase and the Program and Verify Phas e can be repeated to program any number of pag es within the block.

Setup Phase. The Q uadruple Enhan ced Factory Program command requires one Bus Write operation to initiate the load phase. After the setup command is issued, read operations output the Status Register data. The Read Status Register command must not be issued as it will be interpreted as data to program.

Load Phase. The Load Phase requires 4 cycles to load the data (refer to Table 7, Factory Program Commands and Figure 30, Quadruple Enhanced Factory Program Flowchart). Once the first Word

of each Page is written it is impossible to exit the Load phase until all four Words have been written.

Two successive steps are required to issue and execute the Load Phase of the Quadruple Enhanced Factory Program comm and.

1. Us e one Bus Write operation to latch the Start Address and the first Word of the first Page to be programmed. For subsequent Pages the first Word address can remain the Start Address (in which case the next Page is programmed) or can be any address in the same block. If any address with data FFFFh is given that is not in the same block as the Start Address, the device enters the Exit Phase. For the first Load Phase Status Register bit SR7 should be read after the first Word has been issued to check that the command has been accepted (bit SR7 set to ‘0’). This check is not required for subsequent Load Phases.

2. Each subsequent Word to be programmed is latched with a new Bus Write operation. The address is only checked for the first Word of each Page as the order of the Words to be programmed is fixed.

The memory is now set to enter the Program and Verify Phase.

Program and Verify Phase. In the Program and Verify Phase the four Words that were loaded in the Load Phase are programmed in the memory array and then verified by the Program/Erase Controller. If any errors are found the Program/Erase Controller reprograms the location. During this phase the Status Register shows that the Program/Erase Controller is busy, Status Register bit SR7 set to ‘0’, and that the device is not waiting for new data, Status Register bit SR0 set to ‘1’. When Status Register bit SR0 i s set to ‘0’ the Program and Verify phase has terminated.

Once the Verify Phase has successfully completed subsequent pages in the same block can be loaded and programmed. The device returns to the beginning of the Load Phase by issuing one Bus Write operation to latch the A ddress and the first of the four new Words to be programmed.

Exit Phase. Finally, after all the pages have been programmed, write one Bus Write operation with data FFFFh to any address outside the block containing the Start Address, to terminate the Load and Program and Verify Phases.

Status Register bit SR7 set t o ‘1’ a nd bit S R0 set to ‘0’ indicate that the Quadruple Enhanced Factory Program command has terminated. A full Status Register check should be done to ensure that the block has been sucessfully programmed. See the section on the Status Register for more details.

If the Program and Verify Phase has successfully completed the memory returns to Read mode. If

20/82

the P/E.C. fails to program and reprogram a given location, the error will be signaled in the Status Register.

Table 7. Factory Program Commands

Command Phase

Bank Erase

Double Word Program

Cycles

(4)

1st 2nd 3rd Final -1 Final

Add Data Add Data Add Data Add Data Add Data

BKA 80h BKA D0h

BKA or WA1

35h WA1 PD1 WA2 PD2

(8)

M58WR064ET, M58WR064EB

Bus Write Operations

Quadruple Word Program

(5)

Enhanced

Factory

Program

Setup, Program

(6)

Verify, Exit n+1

Setup, first Load

n+1

BKA or

(8)

WA1 BKA or

(8)

WA1

(2)

WA1

BKA or

(8)

WA1

56h WA1 PD1 W A2 PD2 WA3 PD3 WA4 PD4

30h

PD1

75h

BA or

WA1

WA2

WA1

(9)

(3)

(2)

D0h

PD2

PD1

WA1

WA3

WA2

(2)

(3)

(7)

PD1

PD3

PD2

WAn

WA3

(3)

(7)

PAn

PD3

NOT

WA1

NOT

WA1

WA4

First

Quadruple

Enhanced

Factory

Program

(5,6)

Program & Verify

Subsequent Loads

Subsequent Program &

Automatic

WA1i

(2)

PD1i

WA2i

(7)

PD2i

WA3i

(7)

PD3i

Automatic

WA4i

(7)

Verify

NOT

Exit 1

Note: 1. WA=Word Add ress in t argeted bank, BKA= Bank A ddress, P D= P rogram Data, BA =Block Address .

2. WA1 is the Start Address. NOT WA1 is any addres s t hat i s not in the same bl ock as W A1.

3. Address ca n remain Starting Address WA1 or be i ncremented.

4. Word Addres ses 1 and 2 must be consecutive Addresses differing only for A0.

5. Word Addres ses 1,2,3 and 4 must be consecutive Addresses di ffering onl y for A0 and A1.

6. A Bus Read mus t b e d one bet ween eac h Wr ite cyc le where t he da t a is p rog ram med or v erif ied to read t he Stat us R eg ister an d check that the memory is ready to accept the next dat a. n = number of Words, i = number of Pages to be progr am m ed.

7. Address is o nly che ck ed for the fir st Wo rd of ea ch Page a s the o rder t o pro gram the Wo rds i n each pag e is fixe d so su bs equent Words in each Page can be written to any address.

8. Any address within the bank can be used.

9. Any addres s within the bl ock can be use d.

WA1

(2)

FFFFh

(2)

(7)

FFFFh

PD4

PD4i

21/82

M58WR064ET, M58WR064EB

STATUS REGISTER

The Status Register provides information on the current or previous Program or Erase operations. Issue a Read Status Register command to read the contents of the Status Register, refer to Read Status Register Command section for more details. To output the contents, the Status Register is latched and updated on the falling edge of the Chip Enable or Output Enable signal s and c an be read until Chip Enable or Output Enable returns to V

. The Status Register can only be read using

single asynchronous or single synchronous reads. Bus Read operations from any address within the bank, always read the Status Register during Program and Erase operations.

The various bits convey information about the status and any errors of the operation. Bits SR7, SR6, SR2 and SR0 give information on the status of the device and are set and reset by the device. Bits SR5, SR4, SR3 and S R1 give information on errors, they are set by the device but must be reset by issuing a Clear Status Register command or a

hardware reset. If an error bit is set to ‘1’ the Status Register should be reset before issuing another command. SR7 to SR1 ref er to the status of the device while SR0 refers to the status of the addressed bank.

The bits in the Status Register are summarized in Table 8, Status Register Bits. Refer to Table 8 in conjunction with the following text descriptions.

Program/Erase Controller Status Bit (SR7). The Program/Erase Controller Status bit indicates whether the Program/Erase Controller is act ive or inactive in any bank. When the Program/Erase Controller Status bit is Low (set to ‘0’), the Program/Erase Controller is active; when the bit is High (set to ‘1’), the Program/Erase Controller is inactive, and the device is ready to process a new command.

The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the bit is High.

During Program, Erase, o perations the Program/ Erase Controller Status bit can be polled to find the end of the operation. Other bits in the Status Register should not be tested until the Program/Erase Controller completes the operation and the bit is High.

After the Program/Erase Cont roller completes its operation the Erase Status, Prog ram Status, V Status and Block Lock Status bits should be tested for errors.

Erase Suspend Status Bit (SR6). The Erase Suspend Status bit indicates that an Erase operation has been suspended or is going to be sus-

pended in the addressed block. When the Eras e Suspend Status bit is High (set to ‘1’), a Program/ Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command.

The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). SR7 is set within the Erase Suspend Latency time of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode.

When a Program/Erase Re sume command is issued the Erase Suspend Status bit returns Low.

Erase Status Bit (SR5). The Erase Status bit can be used to identify if the memory has failed to verify that the block or bank has erased correctly. When the Erase Status b it is High (set to ‘1’), the Program/Erase Controller has applied the maximum number of pulses to the block or bank and still failed to verify that it has erased correctly. The Erase Status bit should be read once the Program/ Erase Controller Status bit is High (Program/Erase Controller inactive).

Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail.

Program Status Bit (SR4). The Program Status bit is used to identify a Program failure or an attempt to program a ‘1’ to an already programmed bit when V

= V

PPH

When the Program Status bit is High (set to ‘1’), the Program/Erase Controller has applied the maximum number of pulses to the byte an d still failed to verify that it has programmed correctly.

After an attempt to program a '1' to an already programmed bit, the Program Status bit SR4 only goes High (set to '1') if V ent from V

, SR4 remains Low (set to '0') and

PPH

= V

(if VPP is differ-

PPH

the attempt is not shown). The Program St atus bit should be read once t he

Program/Erase Controller Status bit is High (Program/Erase Controller inactive).

Once set High, the Program Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail.

Status Bit (SR3). The VPP Status bit can be

used to identify an invalid v oltage on the V during Program and Erase operations. The V

pin is only sampled at the beginning of a Program

22/82

M58WR064ET, M58WR064EB

or Erase operation. Indeterminate results can occur if V

When the V

age on the V when the V

becomes invalid during an operation.

Status bit is Low (set to ‘0’), the volt-

pin was sampled at a valid voltage;

Status bit is High (set to ‘1’), the V

pin has a voltage that is below the VPP Lockout Voltage, V

, the memory is protected and Pro-

PPLK

gram and Erase operations cannot be performed. Once set High, the V

Status bit can only be reset

Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail.

Program Suspend Status Bit (SR2). The Program Suspend Status bit indicates that a Program operation has been suspended in the addressed block. When the Program Suspend Status bit is High (set to ‘1’), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The Program Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). SR2 is set within t he Program Suspend Latency time of the Program/Erase Suspend command being issued therefore the memory may still complete the operation rather than entering the Suspend mode.

When a Program/Erase Re sume command is issued the Program Suspend Status bit returns Low.

Block Protection Status Bit (SR1). The Block Protection Status bit can be used to identify if a Program or Block Erase operation has tried to modify the contents of a locked block.

When the Block Protection Status bit is High (set to ‘1’), a Program or Erase operation has been attempted on a locked block.

Once set High, the Block Protection Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new command is issued, otherwise the new command will appear to fail.

Bank Wri te/Multiple Wor d Program Sta tus Bit (SR0). The Bank Write Status bit indicates wheth-

er the addressed bank is programming or erasing. In Enhanced Factory Program mode th e Multiple Word Program bit shows if a Word has finished programming or verifying depending on the phase. The Bank Write Status bit should only be considered valid when the Pro gr a m/Erase Controller Status SR7 is Low (set to ‘0’).

When both the Pro gra m/Erase Controller Status bit and the Bank Write Status bit are Low (set to ‘0’), the addressed bank is executing a Program or Erase operation. When the Program/Erase Controller Status bit is Low (set to ‘0’) and the Bank Write Status bit is High (set to ‘1’), a Program or Erase operation is being executed in a bank other than the one being addressed.

In Enhanced Factory Program mode if Multiple Word Program Status bit is Low (set to ‘0’), the device is ready for the next Word, if the Multiple Word Program Status bit is High (set to ‘1’) the device is not ready for the next Word.

Note: Refer to Appendix C, Flowcharts and Ps eudo Codes, for using the Status Register.

23/82

M58WR064ET, M58WR064EB

Table 8. Status Register Bits

Bit Name Type Logic Level Definition

SR7 P/E.C. Status Status

SR6 Erase Suspend Status St atus

’1’ Ready ’0’ Busy ’1’ Erase Suspended ’0’ Erase In progress or Completed

SR5 Erase Status Error

SR4 Program Status Error

SR3

Error

Status

SR2 Program Suspend Status Status

SR1 Block Protection Status Error

Bank Write Status Status

SR0

Multiple Word Program Status (Enhanced

Status

Factory Program mode)

Note: Logic level ’1’ is High, ’0’ is Low.

’1’ Erase Error ’0’ Erase Success ’1’ Program Error ’0’ Program Success

Invalid, Abort

’1’ ’0’

’1’ Program Suspended ’0’ Program In Progress or Completed ’1’ Program/Erase on protected Block, Abort ’0’ No operation to protected blocks

SR7 = ‘0’ Program or erase operation in addressed bank

’0’

SR7 = ‘1’ No Program or erase operation in the device

'1'

SR7 = ‘0’

Program or erase operation in a bank other than

the addressed bank SR7 = ‘1’ Not Allowed SR7 = ‘0’ the device is NOT ready for the next word

'1'

SR7 = ‘1’ Not Allowed SR7 = ‘0’ the device is ready for the next Word

'0'

SR7 = ‘1’ the device is exiting from EFP

24/82

CONFIGURATION REGISTER

The Configuration Register is used to configure the type of bus access that the memory will perform. Refe r to Rea d Mo des secti on fo r d etai ls on read operations.

The Configuration Register is set through the Command Interface. After a Reset or Power-Up the device is configured for asynchronous page read (CR15 = 1). T he Configuration Register bits are described in Table 9. They spe cify the selection of the burst length, burst type, burst X latency and the Read operation. Refer to Figures 6 and 7 for examples of synchronous burst configurations.

Read Select Bit (CR15)

The Read Select bit, CR15, is used to switch between asynchronous an d sync hronous B us Read

operations. When the Read Se lect bit is set to ’1’, read operations are asynchronous; when the Read Select bit is set to ’0’, read o perations are synchronous. Synchronous Burst Read is supported in both parameter and main blocks and can be performed across banks.

On reset or power-up the Read Sel ect bit is set to’1’ for asynchronous access.

X-Latency Bits (CR13-CR11)

The X-Latency bits are used during Synchronous Read operations to set the number of clock cycles between the address bei ng latched and the first data becoming available. For correct operation the X-Latency bits can only assume the values in Table 9, Configuration Register.

The correspondence be tween X-Latency settings and the maximum sustainable freq uency must be calculated taking into account some system parameters. Two conditions must be satisfied:

1. Depending on whether t

AVK_CPU

or t

DELAY

is supplied either one of the following two equations must be satisfied:

(n + 1) t (n + 2) tK ≥ t

≥ t

ACC ACC

- t

AVK_CPU

+ t

DELAY

+ t

QVK_CPU

2. and also > t

KQV

+ t

QVK_CPU

where n is the chosen X-Latency configuration code

is the clock period

AVK_CPU

is clock to address valid, L Low, or E

Low, whichever occurs last t

is address valid, L Low, or E Low t o clock,

DELAY

whichever occurs last t

QVK_CPU

is the data setup time required by the

system CPU,

is the clock to data valid time

KQV

is the random access time of the device.

ACC

M58WR064ET, M58WR064EB

Refer to Figure 6, X-Latency and Data Output Configuration Example.

Wait Polarity Bit (CR10)

In synchronous burst mode the W ait signal indicates whether the output data are valid or a WAIT state must be inserted. The Wait Polarity bit is used to set the po larity of the Wait signal. When the Wait Polarity bit is set to ‘0’ the Wait signal is active Low. When the Wait P ola rity bit is s et t o ‘ 1’ the Wait signal is active High (default).

Data Output Configuration Bit (CR9)

The Data Output Configuration bit determines whether the output remains valid for one or two clock cycles. When the Data Output Configuration Bit is ’0’ the output data is valid for one clock cycle, when the Data Output Configuration Bit is ’1’ the output data is valid for two clock cycles.

The Data Output Configuration depends on the condition:

■ t

> t

where tK is the clock period, t setup time required by the s ystem CPU and t is the clock to data valid time. If this condition is not satisfied, the Data Output Configuration bit should be set to ‘1’ (two clock cycles). Refer to Figure 6, X-Latency and Data Output Configuration Example.

Wait Confi guration Bit (C R 8)

In burst mode the Wait bit controls the timing of the Wait output pin, WAIT. When WAIT is asserted, Data is Not Valid and when WAIT is deasserted, Data is Valid. When the Wait bit is ’0’ the Wait output pin is asserted during the wait state. When the Wait bit is ’1’ (default) the Wait output pin is asserted one clock cycle before the wait state.

Burst Type Bit (CR7)

The Burst Type bit is used to configure the sequence of addres ses read as sequential or interleaved. When the Burst Type bit is ’0’ the memory outputs from interleaved addresses; when the Burst Type bit is ’1’ (default) the mem ory outputs from sequential addresses. Se e Tables 10, Burst Type Definition, for the sequence of addresses output from a given starting address in each mode.

Valid Clock Edge Bit (CR6)

The Valid Clock Edge bit, CR6, is used to configure the active edge of the Clock, K, during Synchronous Burst Read operations. When the Valid Clock Edge bit is ’0’ the falling edge of the Clock is the active edge; when the Vali d Clock Edge bit is ’1’ the rising edge of the Clock is active.

Wrap Burst Bit (CR3)

The burst reads can be confined inside the 4 or 8 Word boundary (wrap) or o vercome t he b oundary

KQV

+ t

QVK_CPU

is the data

KQV

25/82

+ 57 hidden pages

SGS Thomson Microelectronics M58WR064ET, M58WR064EB Datasheet

FEATURES SUMMARY

Figure 1. Package

TABLE OF CONTENTS

SUMMARY DESCRIPTION

Figure 2. Logic Diagram Table 1. Signal Names

Figure 3. VFBGA Connections (To p view thro ugh packa ge)

Table 2. Bank Architecture

Figure 4. Me m ory Map

SIGNAL DESCRIPTIONS

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess dur­ing Bus Read operations. During Bus Write opera­tions they control the commands sent to the Command Interface of the internal state machine.

Data Input/Output (DQ0-DQ15). The Data I/O outputs the data stored at the selected address during a Bus Read operation or inputs a command or the data to be programmed during a Bus Write operation.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high imped­ance when Chip Enable is at V

BUS OPERATIONS

Bus Read. Bus Read operations are used to out­put the contents of the Memory Array, the Elec­tronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

Bus Write. Bus Write operations write Com­mands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch En­able must be at V

Output Disa bl e . The outputs are high imped­ance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the cur­rent consumption. The memory is in stand-by when Chip Enable and Reset are at V

Reset. During Reset mode the memory is dese­lected and the outputs are high impedance. The memory is in Reset mode when Reset is at V

Table 3. Bus Operations

COMMAND INTERFACE

Table 4. Command C odes

COMMAND INTERFACE - STANDARD COMMANDS

Read Array Command

Read Status Register Command

Read Electronic Signature Command

Read CFI Query Command

Clear Status Register Command

Block Erase Command

Program Command

Program/Erase Suspend Command

Program/Erase Resu me Command

Protectio n R egist er Progr am C om m and

Set Conf ig uration Regi s te r C om m and

Block Lock Command

Block Unlock Command

Block Lock-Down Command

Table 5. Standard Commands

Table 6. Electronic Signature Codes

Figure 5. Security Block and Protection Register Memory Map

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

Bank Erase Command

Double Word Program Command

Quadruple Word Program Command

Enhanced Factory Program Command

Quadruple Enhanced Factory Program Command

Table 7. Factory Program Commands

STATUS REGISTER

Table 8. Status Register Bits

CONFIGURATION REGISTER

Read Select Bit (CR15)

X-Latency Bits (CR13-CR11)

Wait Polarity Bit (CR10)

Data Output Configuration Bit (CR9)

Wait Confi guration Bit (C R 8)

Burst Type Bit (CR7)

Valid Clock Edge Bit (CR6)

Wrap Burst Bit (CR3)

Address Inputs (A0-A21). The Address Inputs select the cells i n the memory array to a ccess during Bus Read operations. During Bus Write operations they control the commands sent to the Command Interface of the internal state machine.

Wait (WAIT). Wai t is an output signal used during synchronous read to indicate whether the dat a on the output bus are valid. This output is high impedance when Chip Enable is at V

Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at V

Bus Write. Bus Write operations write Commands to the memory or latch Input Data to be programmed. A bus write operation is initiated when Chip Enable and Write Enable are at V Output Enable at V

Address Latch. Address latch operations input valid addresses. Both Chip enable and Latch Enable must be at V

Output Disa bl e . The outputs are high impedance when the Output Enable is at V

Standby. Standby di sables most of the internal circuitry allowing a substantial reduction of the current consumption. The memory is in stand-by when Chip Enable and Reset are at V

Reset. During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at V