– Active Current70mA at 8MHz
– Stand-by Current 100mA
■ PROGRAMMING VOLTAGE: 12V ± 0.25V
■ PROGRAMMING TIME: 100µs/byte
(typical)(PRESTO III Algorithm)
■ ELECTRONIC SIGNATURE:
– Manufacturer Code0020h
– Device Code: 0032h
M27C320
PRELIMINARY DATA
44
1
SO44 (M)TSOP48 (N)
12 x20 mm
Figure 1. Logic Diagram
DESCRIPTION
The M27C320 is a 32 Mbit EPROM offered in the
OTP range (one time programmable). It is ideally
suited for microprocessor systems requiring large
data or program storage. It is organised as either
4 MWords of 8 bit or 2 MWords of 16 bit. The pinout is compatible with the 32 Mbit Mask ROM.
The M27C320 is offered in TSOP48 (12 x 20mm)
and SO44 packages.
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listedin the Table ”Absolute Maximum Ratings” may
2/15
cause permanent damage to the device. These are stress ratings only and operation of the device atthese or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periodsmay affect device reliability. Referalso to theSTMicroelectronics SUREProgram and other relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
Ambient Operating Temperature
Temperature Under Bias–50 to 125°C
Storage Temperature–65 to 150°C
Input or Output Voltage (except A9)–2 to 7V
Supply Voltage–2 to 7V
A9 Voltage–2 to 13.5V
Program Supply Voltage–2 to 14V
+0.5V with possible overshoot to VCC+2V for a period less than 20ns.
CC
(1)
(3)
–40 to 125°C
Table 3. Operating Modes
ModeEGV
Read Word-wide
Read Byte-wide UpperV
Read Byte-wide Lower
Output Disable
Program
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
V
V
V
PulseV
IL
V
IH
V
IH
V
PP
IL
IL
IL
IL
IL
V
IL
V
IL
V
IL
V
IH
PP
V
PP
XXXHi-ZHi-ZHi-Z
V
IL
BYTEA9Q0-Q7Q8-Q14Q15A–1
V
IH
V
IL
V
IL
XXHi-ZHi-ZHi-Z
V
IH
V
IH
V
IH
XData OutData OutData Out
XData OutHi-ZV
XData OutHi-Z
XData InData InData In
XHi-ZHi-ZHi-Z
V
ID
CodesCodesCode
Table 4. Electronic Signature
IdentifierA0Q7Q6Q5Q4Q3Q2Q1Q0Hex Data
Manufacturer’s Code
Device CodeV
Note: Outputs Q8-Q15 are set to ’0’.
V
IL
IH
00100000 20h
00110010 32h
M27C320
IH
V
IL
DEVICE OPERATION
The operatingmodes ofthe M27C320 are listed in
the OperatingModes Table.A single power supply
is required in the read mode. All inputs are TTL
compatible except for VPPand 12V on A9 for the
Electronic Signature.
Read Mode
The M27C320 has two organisations, Word-wide
and Byte-wide.The organisationis selected by the
signal level ontheBYTE pin. WhenBYTE is at V
IH
the Word-wide organisation is selected and the
Q15A–1 pin is used for Q15 Data Output. When
the BYTE pin is at VILthe Byte-wide organisation
is selected andthe Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide
organisation, then with A–1 at VILthe lower 8 bits
of the 16 bit data are selected and with A–1at V
IH
the upper 8 bits of the 16 bit data are selected.
The M27C320 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. In addition the Word-wide or
Byte-wide organisation must be selected.
Chip Enable (E) is thepower control andshould be
used fordevice selection.Output Enable (G) is the
output control and should be used to gate data to
the output pins independent of device selection.
Assuming that the addresses are stable, the address access time (t
from E to output (t
ELQV
output after a delay of t
) is equal to the delay
AVQV
). Data is available at the
from the falling edge
GLQV
of G, assuming that E has been low and the addresseshave beenstable for atleast t
AVQV-tGLQV
Standby Mode
The M27C320 has standby mode which reduces
the supply current from 50mA to 100µA. The
M27C320 is placedin the standby modeby applying aCMOS high signal to the Einput. Whenin the
standby mode, the outputs are in a high impedance state, independent of the G input.
.
3/15
M27C320
Table 5. AC Measurement Conditions
High SpeedStandard
Input Rise and Fall Times≤ 10ns≤ 20ns
Input Pulse Voltages0 to 3V0.4V to 2.4V
Input and Output Timing Ref. Voltages1.5V0.8V and 2V
Figure 3. Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
Table 6. Capacitance
(1)
(TA=25°C, f = 1 MHz)
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
C
L
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
SymbolParameterTest ConditionMinMaxUnit
V
C
IN
C
OUT
Note: 1. Sampled only,not 100% tested.
Input Capacitance
Output CapacitanceV
=0V
IN
=0V12pF
OUT
10pF
OUT
AI01823B
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
4/15
For the most efficient use of these two control
lines, Eshould be decoded and used astheprimary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselected memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
M27C320
Table 7. Read Mode DC Characteristics
(1)
(TA= 0 to 70 °C; VCC=5V±10%)
SymbolParameterTest ConditionMinMaxUnit
I
I
I
CC
I
CC
I
CC
I
V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current
1
Supply Current (Standby) TTL
2
Supply Current (Standby) CMOS
Program Current
PP
Input Low Voltage–0.30.8V
IL
(2)
Input High Voltage2
Output Low Voltage
OL
Output High Voltage TTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
E=V
E=V
0V ≤ V
IL
IL
0V ≤ V
,G=VIL,I
,G=VIL,I
E>VCC– 0.2V
I
IN
OUT
f = 8MHz
f = 5MHz
E=V
V
PP=VCC
I
= 2.1mA
OL
=–400µA
OH
≤ V
≤ V
IH
OUT
OUT
CC
CC
= 0mA,
= 0mA,
2.4V
±1µA
±10µA
70mA
50mA
1mA
100µA
10µA
V
+1
CC
0.4V
V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require carefull decoupliing of
the suppliesto the devices. The supply current I
CC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E.
The magnitude of the transient current peaks is
dependant on the capacititive and inductive loading of the device outputs. The associatedtransient
voltage peaks can be supressed by complying
with the two line output control and byproperly selected decoupling capacitors. It is recommended
that a 0.1µF ceramic capacitor is used on every
device between VCCand VSS. This should be a
high frequency type of low inherent inductance
and should be placed as close as possible to the
device. In addition, a 4.7µF electrolytic capacitor
should be used between VCCand VSSfor every
eight devices. This capacitor should be mounted
near the power supply connection point. The purpose of this capacitor is to overcome the voltage
drop caused by the inductive effects of PCB traces.
Programming
When delivered, allbits of the M27C320 arein the
’1’ state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although only ’0’s will be programmed, both ’1’s and
’0’s can be present in the data word. The
M27C320 is in the programming mode when V
PP
input is at 12.5V, G is at VIHand Eis pulsedto VIL.
The data to be programmed isapplied to 16 bitsin
parallel to the data outputpins. Thelevels required
for the address and data inputs are TTL. VCCis
specified to be 6.25V ± 0.25V.
5/15
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