SGS Thomson Microelectronics M2716 Datasheet
2048 x 8 ORGANIZATION
525mW Max AC TIVE PO W E R, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTP UT S TT L CO MPAT IBL E
DURING BOTH REA D and PROG RA M
MODES
THREE-STATE OUTPUT with TIED-ORCAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
M2716
NMOS 16K (2K x 8) UV EPROM
24
1
FDIP24W (F)
Figure 1. Logic Diag ra m
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important requirements.
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line pac kage. The transparent lid
allows the user to expose the chip t o ultraviolet light
to erase the bit patt ern. A new pattern can then b e
written to the devic e by following t he programmi ng
procedure.
T able 1. Signal Names
A0 - A10 Address Inputs
Q0 - Q7 Data Outputs
EP Chip Enable / Program
G Output Enable
V
PP
V
CC
Program Supply
Supply Voltage
CC
M2716
V
SS
V
PP
8
AI00784B
V
11
A0-A10 Q0-Q7
EP
G
V
SS
July 1994 1/9
Ground
M2716
T ab le 2. Absol ute Maxim um Ratin gs
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
V
CC
V
IO
V
PP
P
D
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause
permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this spec ific ati on is not implied. Expos u re to Absolute Maximum Rat ing conditions for extended periods
may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
Ambient Operating T emperat ure grade 1
grade 6
Temperature Under Bias grade 1
grade 6
Storage Temperature –65 to 125 °C
Supply Voltage –0.3 to 6 V
Input or Output Voltages –0.3 to 6 V
Program Supply –0.3 to 26.5 V
Power Dissipation 1.5 W
0 to 70
–40 to 85
–10 to 80
–50 to 95
°C
°C
Figure 2. DIP Pin Connection s
A7
1
2
A6
3
A5
A4
4
5
A3
6
A2
A1
A0
Q0
Q1
Q2
V
SS
M2716
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
AI00785
V
CC
A8
A9
V
PP
G
A10
EP
Q7
Q6
Q5
Q4
Q3
DEVICE OPER ATION
The M2716 has 3 m odes of operation in the norm al
system environment . These are shown in Table 3.
Read Mode. The M2716 read operation requires
G = VIL, EP = VIL and that addresses A0-A10
that
have been stabilized. Valid data will appear on the
output pins after time t
AVQV
, t
GLQV
or t
ELQV
(see
Switching T ime Waveforms) depending on which is
limiting.
Deselect Mode. The M2716 is deselected by mak-
G = VIH. This mode is independent of EP a nd
ing
the condition of the addresses. The outputs are
Hi-Z when
G = VIH. This allows tied-OR of 2 or more
M2716’s for memory expansion.
Standby Mode (Power Down). The M2716 may
be powered down to the standby mode by making
EP = VIH. This is indep endent of G and automatically puts the outputs in the Hi- Z state. The power
is reduced to 25% (132 mW max) of the normal
operating power . V
at 5V . Acces s time at power up remains either t
or t
(see Switching Tim e W avefor ms ).
ELQV
and VPP must be maintained
CC
A VQV
Programming
The M2716 is shipped from SG S-THOMSO N completely erased. All bits will be at “1" level (output
high) in this initial state and after any full erasure.
Table 3 shows the 3 programming modes.
Program Mode. The M2716 is programmed by
introducing “0"s into the desired locations. This is
done 8 bit s (a byte) at a time. Any individual a ddress,
sequenti a l a dd res ses, or ad d re ss es c hos en at random may be progr ammed. Any or all of the 8 bits
associated with an ad dress location may be programmed wi th a single program pulse a pplied to the
EP pin. A ll input voltag e levels includin g the program
pulse on chip enable are TTL comp atible.
The programming sequence is: with V
= 25V , V
PP
CC
= 5V , G = VIH and EP = VIL, an address is selected
and the desired data word is applied to the output
pins (V
= “0" and VIH = ”1" for both address and
IL
data). After the address and data signals are stable
the program pin is pulsed from V
to VIH with a
IL
2/9
M2716
DEVICE OPER ATION (cont’d)
pulse width between 45ms and 55ms. Multiple
pulses are not needed but will not cause device
damage. No pins should be left open. A high level
or higher) must not b e maintained longer than
(V
IH
(max) on the program pin during program-
t
PHPL
ming. M2716’s may be programmed in parallel in
this mode.
Program Verify Mode. The programming of the
M2716 may be verified either one byte at a time
during the programming (as shown in Figure 6) or
by reading all of the bytes out at the end of the
programming sequence. This can be done with
= 25V or 5V in either case. VPP must be at 5 V
V
PP
for all operating modes and can be maintained at
25V for all programming modes.
Program Inhibit Mode. The program inhibit mode
allows several M2716’s to be programmed simultaneously with different data for each one by controlling which ones receive the program pulse. All
similar inputs of the M2716 may be paralleled.
Pulsing the program pin (from V
to VIH) will pro-
IL
gram a unit while inhibiting the program pulse to a
unit will keep it from being programmed and k eep-
G = VIH will put its outputs in the Hi-Z state.
ing
ERASURE OPER ATION
The M2716 is erased by exposure to high intensity
ultraviolet light through the transparent window.
This exposure discharges the floating gate to its
initial state through induced photo current. It is
recommended that t he M2716 be kept out of direct
sunlight. The UV c ontent of s unlight may cause
a partial erasure of som e bits in a relativ ely short
period of time.
An ultraviolet source of 2537 Å yielding a total
integrated dosage of 15 watt-seconds/cm
2
power
rating is used. The M2716 to be erased should be
placed 1 inch away from the lamp and no filters
should be used.
An erasure system should be calibrated periodically. The erasure time is increased by the
square of the distance (if the distance is doubled
the erasure time goes up by a factor of 4). Lamps
lose intensity as they age, it is therefore important
to periodically check that the UV system is in good
order.
This will ensure that the EPROMs are being completely erased. Incomplete erasure will cause
symptoms that can be misleading. Programmers,
components, and system designs have been erroneously suspected when incomplete erasure was
the basic problem.
Table 3. Operating Modes
Mode EP GVPPQ0 - Q7
Read V
Program V
Verify V
Program Inhibit V
Deselect X V
Standby V
Note: X = VIH or VIL.
IL
Pulse V
IH
IL
IL
IH
V
IL
IH
V
IL
V
IH
IH
XVCCHi-Z
V
CC
V
PP
VPP or V
V
PP
V
CC
CC
Data Out
Data In
Data Out
Hi-Z
Hi-Z
3/9
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