SGS Thomson Microelectronics LS5120B, LS5060B, LS5018B Datasheet
LS5018B
LS5060B/LS5120B
DIL8
TRISIL
TM
BIDIRECTIONALCROWBAR PROTECTION.
BREAKDOWNVOLTAGESRANGE:
18V,60V and 120V.
HOLDINGCURRENT = 200mAmin.
HIGHSURGECURRENT CAPABILITY
I
PP
= 100A 10/1000µs
FEATURES
TheLS50xxBseries has beendesigned to protect
telecommunication equipment against lightning
andtransientsinduced by ACpowerlines.
Its high surge current capability makes the
LS50xxB a reliable protection device for very exposed equipment, or when series resistors are
verylow.
DESCRIPTION
CCITTK17- K20 10/700 µs 1.5 kV
5/310 µs38A
VDE0433 10/700 µs2kV
5/200 µs50A
CNET 0.5/700 µs 1.5 kV
0.2/310 µs38A
COMPLIESWITH THE FOLLOW INGSTANDARDS:
1
2
3
4
5
6
7
8
SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
I
PP
Peakpulse current 10/1000µs
8/20 µs
100
250
A
I
TSM
Nonrepetitivesurge peakon-state
current
tp= 20ms 50 A
dI/dt
Critical rate of riseof on-statecurrent
Nonrepetitive 100 A/µs
dV/dt Critical rate of riseof off-statevoltage V
RM
5 kV/µs
T
stg
T
j
Storageand operatingjunctiontemperaturerange - 40to +150
150
°C
°C
T
L
Maximumlead temperaturefor solderingduring 10s 230 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
September 1998 Ed: 3A
1/5
Symbol Parameter
I
RM
Leakagecurrentat stand-offvoltage
V
RM
Stand-offvoltage
V
BR
Breakdownvoltage
V
BO
Breakovervoltage
I
H
Holdingcurrent
I
BO
Breakovercurrent
I
PP
Peakpulse current
C Capacitance
ELECTRICALCHARACTERISTICS
(T
amb
=25°C)
Type
I
RM
@V
RM
VBR@I
R
VBO@I
BO
I
H
C
max. min. max. typ. min. max.
note1
note 2 note3
µA V V mA V mA mA pF
LS5018B 5 16 17 1 22 1300 200 150
LS5060B 10 50 60 1 85 1000 200 150
LS5120B 20 100 120 1 180 1250 250 150
Note 1 : Measured at 50Hz (1 cycle)
Note 2 : See test circuit
Note 3 : V
R
= 5 V, F = 1MHz.
Symbol Parameter Value Unit
R
th
(j-a) Junctionto ambienton printedcircuit with recommendedpad
layout
80 °C/W
THERMAL RESISTANCE
LS5018B/LS5060B/LS5120B
2/5
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