Datasheet LS5120B, LS5060B, LS5018B Datasheet (SGS Thomson Microelectronics)

LS5018B
LS5060B/LS5120B
DIL8
TRISIL
TM
BIDIRECTIONALCROWBAR PROTECTION. BREAKDOWNVOLTAGESRANGE:
18V,60V and 120V. HOLDINGCURRENT = 200mAmin. HIGHSURGECURRENT CAPABILITY
I
PP
= 100A 10/1000µs
FEATURES
TheLS50xxBseries has beendesigned to protect telecommunication equipment against lightning andtransientsinduced by ACpowerlines. Its high surge current capability makes the LS50xxB a reliable protection device for very ex­posed equipment, or when series resistors are verylow.
DESCRIPTION
CCITTK17- K20 10/700 µs 1.5 kV
5/310 µs38A
VDE0433 10/700 µs2kV
5/200 µs50A
CNET 0.5/700 µs 1.5 kV
0.2/310 µs38A
COMPLIESWITH THE FOLLOW INGSTANDARDS:
1
2
3
4
5
6
7
8
SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
I
PP
Peakpulse current 10/1000µs
8/20 µs
100 250
A
I
TSM
Nonrepetitivesurge peakon-state current
tp= 20ms 50 A
dI/dt
Critical rate of riseof on-statecurrent
Nonrepetitive 100 A/µs
dV/dt Critical rate of riseof off-statevoltage V
RM
5 kV/µs
T
stg
T
j
Storageand operatingjunctiontemperaturerange - 40to +150
150
°C °C
T
L
Maximumlead temperaturefor solderingduring 10s 230 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
September 1998 Ed: 3A
1/5
Symbol Parameter
I
RM
Leakagecurrentat stand-offvoltage
V
RM
Stand-offvoltage
V
BR
Breakdownvoltage
V
BO
Breakovervoltage
I
H
Holdingcurrent
I
BO
Breakovercurrent
I
PP
Peakpulse current
C Capacitance
ELECTRICALCHARACTERISTICS
(T
amb
=25°C)
Type
I
RM
@V
RM
VBR@I
R
VBO@I
BO
I
H
C
max. min. max. typ. min. max.
note1
note 2 note3
µA V V mA V mA mA pF
LS5018B 5 16 17 1 22 1300 200 150 LS5060B 10 50 60 1 85 1000 200 150 LS5120B 20 100 120 1 180 1250 250 150
Note 1 : Measured at 50Hz (1 cycle) Note 2 : See test circuit Note 3 : V
R
= 5 V, F = 1MHz.
Symbol Parameter Value Unit
R
th
(j-a) Junctionto ambienton printedcircuit with recommendedpad
layout
80 °C/W
THERMAL RESISTANCE
LS5018B/LS5060B/LS5120B
2/5
TESTCIRCUIT 1 FORIBOandVBOparameters:
TESTPROCEDURE :
PulseTestduration(tp = 20ms):
-For Bidirectional devices= SwitchK isclosed
-For Unidirectionaldevices= SwitchK isopen. V
OUT
Selection
-Devicewith V
BO
< 200 Volt
-V
OUT
=250V
RMS,R1
= 140 .
- DevicewithV
BO
≥ 200 Volt
-V
OUT
=480 V
RMS,R2
=240 .
TESTCIRCUIT 2 forI
H
parameter.
Thisis a GO-NOGOTestwhich allowsto confirmthe holdingcurrent (I
H
) levelin a functional
testcircuit.
TESTPROCEDURE :
1) Adjustthe currentlevel at the I
H
valueby shortcircuitingthe AKof the D.U.T.
2) Fire the D.U.Twith a surge Current: Ipp= 10A , 10/1000µs.
3) The D.U.T will comebackoff-statewithin50ms max.
R
-V
P
V
BAT
= - 48 V
Surge generator
D.U.T .
220V
static relay.
R1
R2
240
140
D.U.T
V
BO
measure
I
BO
measure
tp
= 20ms
K
Transformer
220V/ 800V
5A
Auto
Transfor m er
220V/2A
V
out
LS5018B/LS5060B/LS5120B
3/5
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
ITSM (A)
0
10
20
30
40
50
60
70
F=50Hz Tj initial=25°C
t(s)
Figure 1 : Non repetitive surge peak current
versusoverloadduration
0.98
0.96
1.00
1.02
1.04
1.06
1.08
0 10203040506070
Figure3 :Relativevariationof breakdownvoltage
versusambient temperature.
1 10 100 200
10
100
1000
LS5018
LS5060
LS5120
Figure 4 : Junction capacitance versus reverse
appliedvoltage.
-40 -20 0 20 40 60 80 100 120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IH[Tj] /IH[Tj=25°C]
Tamb (°C)
Figure 2 : Relative variation of holding current
versusjunctiontemperature.
ORDERCODE
LS5 018 B
VOLTAGE
LS5018B/LS5060B/LS5120B
4/5
Informationfurnished is believedto beaccurate and reliable. However,STMicroelectronics assumes no responsIbility for theconsequences of use of such information nor forany infringement of patentsor other rights of thirdparties which mayresult from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written ap­proval of STMicroelectronics.
The ST logois a registered trademark of STMicroelectronics
1998STMicroelectronics- Printed in Italy - All rights reserved.
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PACKAGEMECHANICAL DATA
DIL8 Plastic
MARKING :
Logo, Date Code,partNumber. Packaging
: Products supplied in antistatic tubes.
W
eight : 0.59g
REF.
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
a1 0.70 0.027
B 1.39 1.65 0.055 0.065
B1 0.91 1.04 0.036 0.041
b 0.5 0.020
b1 0.38 0.50 0.015 0.020
D 9.80 0.385
E 8.8 0.346 e 2.54 0.100
e3 7.62 0.300
F 7.1 0.280
I 4.8 0.189 L 3.3 0.130 Z 0.44 1.60 0.017 0.063
8
1
5
4
E
D
F
b1
b
e3
e
Z
B
B1
I
L
a1
LS5018B/LS5060B/LS5120B
5/5
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