Datasheet LM311D, LM311, LM211N, LM211D, LM211 Datasheet (SGS Thomson Microelectronics)

.MAXIMUM INPUT CURRENT : 150nA

.MAXIMUM OFFSETCURRENT : 20nA

.DIFFERENTIAL INPUT VOLTAGE RANGE :

±30V

.POWERCONSUMPTION: 135mW AT±15V

.SUPPLYVOLTAGE: +5V TO ±15V

.OUTPUTCURRENT : 50mA

LM111

LM211 - LM311

VOLTAGE COMPARATORS

DESCRIPTION

The LM111, LM211 and LM311 are voltage
comparatorsthathavelowinputcurrents.

Theyarealsodesignedtooperateoverawiderange
of supplyvoltages: fromstandard±15V operational
amplifier supplies down to the single +5V supply
used for IClogic.

TheiroutputiscompatiblewithRTL-DTLandTTLas
wellas MOScircuitsand can switch voltages up to
+50Vat outputcurrentsas high as 50mA.

PIN CONNECTIONS (top view)

1

2

3

+

-

N

DIP8

(Plastic Package)

ORDER CODES

CC

CC

-

+

Temperature

Part Number

LM111 –55, 125
LM211 –40, 105
LM311 0, 70
Example : LM311D

8

7

6

1 - Ground
2 - Non-inverting input
3 - Inverting input
4-V
5 - Balance
6 - Strobe/balance
7 - Output
8-V

D

SO8

(Plastic Micropackage)

Package

Range

o

C ••

o

C ••

o

C ••

ND

October1997

4

5

1/9

LM111 - LM2 11 - LM311

SCHEMATIC DIAGRAM

Strobe/balance

Non-inverting

input

Inverting

input

300

Q5

Q1

R3

Ω

R1

1.3k

D1
5V

Balance

R4

Ω

300

R8

Q9

Q22

Ω

Q10

600

R17
60

R15

450

R14
2k

R9

Ω

Q20

Q11

Q19

R16

400

Q18

Ω

R10
4k

Ω

Q14

Ω

Ω

Q17

Ω

Q16

Q6

R2

Ω

1.3k

Ω

1.2k

Q3

D2
5V

Q2

250

R6

R19

Ω

Ω

Q4

Q23

R5

70

R7

1.2k

Ω

Q7

Ω

R18

200

750

Q8

Q21

Ω

Q13

Collector o u tput

V

CC

Q12

R11

Ω

130

R12

Ω

600

V

CC

Q15

R13

4

Ω

Emitter output or ground

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter LM111 LM211 LM311 Unit

V

CC

V

id

V

i

P

tot

T

oper

T

stg

V

(1–4)

V

(7–4)

Outputshort-circuitduration : 10s LM111: +150oC
Voltage atstrobe pin : V

Note : 1. This rating applies for ±15V supplies. The positive input voltage limit is30V above the negative. Thenegativeinput voltagelimit is

2/9

Supply Voltage 36 36 36 V
Differential Input Voltage ±30 ±30 ±30 V
Input Voltage – (note 1) ±15 ±15 ±15 V
Power Dissipation 500 mW
Operating Free-air Temperature Range –55 to +125 –40 to +105 0 to +70
Storage Temperature Range –65 to +150 –65 to +150 –65 to +150
Ground to Negative Supply Voltage 30 30 30 V
Output to Negative Supply Voltage 50 50 40 V

+

–5V Maximum junction temperature LM211 : +150oC

CC

equal to the negative supply voltageor 30V below thepositive supply, whichever is less.

LM311: +150

o

C

o

C

o

C

LM111 - LM211 - LM311

ELECTRICAL CHARACTERISTICS

= ±15V, T

V

CC

Symbol Parameter

Input Offset Voltage (RS≤ 50kΩ) – (note 1)

V

io

Input Offset Current – (note 1)

I

io

Input Bias Current – (note 1)

I

ib

Large Signal Voltage Gain 40 200 40 200 V/mV

A

vd

Supply Currents

+

I

CC

-

I

CC

Input Common Mode Voltage Range

V

icm

V

Low Level Output Voltage

OL

High Level Output Current

I

OH

I

Notes: 1. The offset voltage,offset current and bias current specificationsapply for any supply voltage froma single+5V supply up to ±15V

Strobe Current 3 3 mA

strobe

Response Time – (note 2) 200 200 ns

t

re

supplies.
The offset voltages and offset currents given are the maximumvalues requiredto drive the outputdown to +1V or upto +14V with
a 1mA load current. Thus,these parameters define an errorband and take into accountthe worst-case of voltagegain and input
impedance.

2. The response time specified(see definitions) is for a 100mV input step with5mV overdrive.

=25oC(unless otherwise specified)

amb

= +25oC

T

amb

. ≤ T

T

min

T

amb

. ≤ T

T

min

T

amb

. ≤ T

T

min

amb

= +25oC

amb

= +25oC

amb

≤ T

≤ T

≤ T

max

max

max

.

.

.

Positive
Negative

. ≤ T

T

min

T

amb

T

min.

+

≥ +4.5 V, V

V

CC

= 8mA V

I

o

T

amb

. ≤ T

T

min

≤ T

amb

= +25oC, IO= 50mA V
≤ T

amb

= +25oCV

amb

. -14.5 +13.8

max

-5mV

i ≤

-10mV

V

≤ T

.

max

-

CC

≤ T

.V

max

=0

i ≤

-6mV

i ≤

-10mV

V

i ≤

≥+ 5mV, VO= +35V

i

≥ +10mV, VO=+5V

V

i

≥+ 5mV, VO= +35V

i

LM111 - LM211 LM311

Min. Typ. Max. Min. Typ. Max.

0.7 3
4

410

20

60 100

150

5.1

4.1

6
5

+13

-14.7

0.75

0.23

1.5

0.4

-14.5

2 7.5

10

650

70

100 250

300

5.1

7.5

4.1

+13.8

5

+13

-14.7

0.75

0.23

1.5

0.4

0.2

0.2 50nAnA

0.1100.5

Unit

mV

nA

nA

mA

µA

V

V

3/9

LM111 - LM211 - LM311

TRANSFERT CHARACTERISTICS

60

Normal output

50

Emitter follower
output

40

RL=600

30

20

OUTPUT VOLTAGE (V)

10

0

-1 -5 0 0.5 1

Ω

RL=1k
VL = +50 V

T

=+25 C

amb

VCC=+30 V

DIFFERENTIA L INPUT VOLTA GE (mV)

+

V

CC

-0.5

-1.5

-1

CO MMON MODE L IMITS

Ω

OUTPUT LIMI TING CHARACTERISTICS

140

120

100

80

60

40

20

SHORT-CIRCUIT CURRENT (mA)

0

0 5 10 15

T

= +25 C

am b

n

o

ti

a

p

i

s

s

i

d

r

we

o

P

Sh o rt c ircuit c urre nt

OUT P UT VOLTAG E (V)

INPUT O FF S ET CUR RE NT

30

VCC= –15V

20

Raised

0.7

POWER DISSIPATION (W)

0.6

0.5

0.4

0.3

0.2

0.1

0

0.4

0.2

COMMON MODE LIMITS (V)

-

V

CC

01020304050607080

TE MPE RATUR E( C)

INPUT BIAS CURRENT (nA)

10

INPUT OFFSET CURRENT ( nA)

0

-55 -35 -15 5 25 45 65 85 105 125

INP UT BIAS CUR RE NT

400

300

200

100

0

-55 -35 -15 5 25 45 65 85 105 125

Raised

Norma l

VCC= –15V

TEMP ERATURE ( C)

Norma l

TE MPE RATURE( C)

4/9

LM111 - LM211 - LM311

EQUIVALENT INPUT OFFSET ERROR

100

LM111
LM211
T

=+25 C

amb

10

EQUIVALENTINPUT

OFFSET VOLTAGE (mV)

1

Maximum

Typica l

VIO=VIO+RSI

ID

0.1
10k 100k 1M 10M

INPUT RESISTANCE (Ω)

LOW LEVEL OUTPUT SATURATION VOLTAGE

0.8

LM111

0.7

0.6

0.5

0.4

LM211 › T

T

=-55 C

amb

amb

= +125 C

EQUIV A L ENT INPUT OFFSET ERROR

100

T

=+25 C

amb

LM 311

Maximum

10

Typical

EQUIVALENTINPUT

OFFSET VOLTAGE (mV)

VIO=VIO+RS I

ID

10k 100k 1M 10M

INPUT RESISTANCE (Ω)

LOW LEVEL O UTPU T S ATURATION VOLTAGE

0.8

LM311 T

0.7

0.6

0.5

0.4

amb

= +25 C

0.3

0.2

T

= +25 C

0.1

SATURATION VOLTAGE (V)

0

01020304050

amb

OUTP UT C URE NT (m A)

180

160

140

120
100

80
60

40

20

INPUT BIAS CURRENT (nA)

0.3

0.2

0.1

SATURATION VOLTAGE (V)

0

01020304050

O UTPU T C URRE NT (mA)

INPUT C HARACTE RISTICS

VCC= –15V
T

=+25 C

amb

0

-16 -12 -8 -4 0 4 8 12 16

DIFFERENTIALINPUT VOLTAGE (V)

5/9

LM111 - LM211 - LM311

INPUT VOLTAGE (mV)

OUTPUT VOLTAGE (V)

INPUT VOLTAGE (mV)

RESPONSE TIME FOR VARIOUS

INPUT OVERDRIVES

5

20mV

4

5mV

3
2

2mV

VCC = –15V
T

1
0

100

V

-

I

+

50

0

0 0.2 0.4 0.6 0.8

TIME (µs)

RESPONSE TIME FOR VARIOUS

INPUT OVERDRIVES

15

OUTPUT VOLTAGE (V)

10

-5

-10

-15
100

50

5
0

20mV

5mV

2mV

0

V

I

VCC = –15V
T

amb

amb

+5 V

+

-

=+25 C

500

VCC+

VCC-

=+25

RESPONSE TIM E FOR VARIOUS

INPUT OVERDRIVES

5

4

20mV

3
2

5mV

1

-50

OUTPUT VOLTAGE (V)

2mV

0

Ω

V

o

INPUT VOLTAGE (mV)

-100

0 0.2 0.4 0.6 0.8

+5 V

V

-

I

+

VCC = –15V
T

=+25 C

amb

500

V

Ω

o

TIME (µs)

RESPONSE TIME FOR VARIOUS

INPUT OVERDRIVES

20mV

15
10

5mV

V

o

Ω

2k

5

2mV

0

-5

-10

-15
0

OUTPUT VOLTAGE (V)

INPUT VOLTAGE (mV)

-50

C

-100

VCC+

V

+

I

-

VCC-

VCC = –15V
T

=+25

amb

V

o

Ω

2k

C

6/9

01234

TIM E (µs)

01234

TIM E (µs)

TYPICAL APPLICATIONS

CRYSTALOSCILLATOR

=+5V

V

2

3

CC

Ω

100kHz C 2

8

LM111

4

1

R2

100k

R1

100k

Ω

C1

0.1µF

7

2k

R4

Ω

50k

10pF

R3

Ω

Output

LM111 - LM211 - LM311

LOW VOLTAGE ADJUSTABLE REFERENCE
SUPPLY

=+5V

V

2N 2222

3.9k

2N 1304

R2

1k

3

2

CC

Ω

8

LM111

4

R1

Ω

10k

R3

R4

Ω

500

Ω

7

1

Output

+C1*

µ

1.5

F

*Sold tantalum

100KHz FREE RUNNING MULTIVIBRATOR

=+5V

V

C1

1200pF

R2

20k

Ω

R1

20k

Ω

3

2

CC

R3

10k

LM111

4

*TTLor DTLfan-out two

R5

Ω

1k

Ω

8

7

R4

39k

Ω

Squa re wave output

1

AUXILIARY CIRCUITS

2

LM111

3

2N 2222

STROBE

6

Q1

1k

R1

7

TTL strobe

Ω

INCREASING INPUT STAGE

CURRENT

5

2

6

LM111

3

TTL INTERFACE WITH HIGH LEVEL LOGIC

=+5V

V

Input

47k

R2

R3

Ω

82k

2

3

Ω

R4

Ω

82k

8

LM111

4

R1

Ω

240k

C1

CC

7

1

To TTLlogic

0 to +30Vs wing and

+15Vthresholg

R5

1k

OFFSETBALANCING

R2

Ω

3k

V

CC

8

7

5k

Ω

5

6

2

LM111

8

7

3

Ω

V

CC

7/9

LM111 - LM2 11 - LM311

PACKAGE MECANICAL DATA

8 PINS- PLASTICDIP

Dim.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0260

i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

DIP8.TBL PM-DIP8.EPS

8/9

PACKAGE MECANICAL DATA

8 PINS- PLASTICMICROPACKAGE(SO)

LM111 - LM211 - LM311

Dim.

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

A 1.75 0.069

a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020

c1 45

o

(typ.)

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244
e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi­bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publicationare subject to change without notice. This publication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.

o

(max.)

PM-SO8.EPS

SO8.TBL

 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved

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