SGS Thomson Microelectronics LIS3L02AS Datasheet

3Axis - 2g/6g LINEAR ACCELEROMETER
3V TO 5.25V SINGLE SUPPLY OPERATION
THE SENSITIVITY IS ADJUSTED WITH A
TOTAL ACCURACY OF ±10%
THE OUTPUT VOLTAGE, OFFSET,
DEVICE SENSITI VITY IS ON-CHI P FACTORY
TRIMMED
EMBEDDED SELF TEST
HIGH SHOCK SURVIVABILITY
DESCRIPTION
The LIS3L02AS is a t ri-axis linear accelerometer that includes a sensing element and an IC inter­face able to take the information from the sensing element and to provide an analog signal to the ex­ternal world.
The sensing element, capable to detect the accel­eration, is manufactured using a dedicated pro­cess called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuators in silicon.
The IC interface instead is manufactured us ing a CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to better match the sensing element characteristics.
The LIS3L02AS has a user selectable full scale of
LIS3L02AS
INERTIAL SENSOR:
PRODUCT PREVIEW
SO-24
ORDERING NUMB ER: LIS3L 02AS
2g, 6g and it is capable of measuring accelerations over a maximum bandwidth of 4.0 K Hz for the X and Y axis and 2.5KHz for the Z axis. The device bandwidth may be reduced by using external ca­pacitances. A self-test capability allows the user to check the functi o n ing of th e syst e m.
The LIS3L02AS is a vailable in plastic SM D pack­age and it is specified over a temperature range extending from -40°C to +85°C.
The LIS3L02AS belongs to a family of products suitable for a variety of applications:
– Antitheft systems – Inertial navigation – Virtual reality input devices – Vibration Monitoring, recording and com pen-
sation – Appliance control – Robotics
BLOCK DIAGRAM
S1X S1Y
S1Z
rot
S2Z S2Y
S2X
VOLTAGE & CURRENT
REFERENCE
February 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
MUX
TRIMMING CIRCUIT
TEST INTERFACE
AMPLIFIE R
DEMUX
CLOCK
&
PHASE GENERATOR
S/HCHARGE
S/H
S/H
&
Routx
Routy
Routz
Voutx
Vouty
Voutz
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LIS3L02AS
PIN DESCRIPTION
Pin Function
1 to 6 NC Internally not connected
7 Reserved Leave unconnected or connect to ground 8 Reserved Leave unconnected or connect to Vdd 9 Reserved Connect to Vdd or ground
10-11 Reserved Leave unconnected or connect to Vdd
12 FS Full Scale selection (Logic 0: 2g Full-scale; Logic 1: 6g Full-scale) 13 Voutz Output Voltage 14 PD Power Down (Logic 0: normal mode; Logic 1: Power-Down mode) 15 Voutx Output Voltage 16 ST Self Test (Logic 0: normal mode; Logic 1: Self-test) 17 Vouty Output Voltage 18 Vdd Power supply 19 GND 0V supply
20 to 24 NC Internally not connected
PIN CONNECTION (Top view )
X
Z
13
Y
1
Reserved DIRECTION OF THE DETECTABLE ACCELERATIONS
Reserved
Reserved
Reserved
Reserved
NC NC NC NC NC
NC
FS
NC NC NC NC NC
GND Vdd Vouty ST Voutx
PD Voutz
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LIS3L02AS
ELECTRICAL CHARACTERISTCS (Temperature range -40°C to +85°C)
Symbol Parameter Test Condition Min. Typ. Max. Unit
Vdd Supply voltage 3 5.25 V
Idd Supply current 1.0 mA
Voff Zero-g level T = 25°C
ratiometric to Vdd
Ar Acceleration range 0V on FS pin ±1.8 ±2.0 ±2.2 g
Vdd on FS pin ±±6.0 g
So Sensitivity ratiometric to Vdd T = 25°C
NL Non Linearity Best fit straight line
fuc Sensing Element Resonant
Frequency
an Accel eration noise density Vdd=5V
Vt Self test output voltage
Ratiometric to Vdd
Vst Self test input Logic 0 level 0 0.8 V
Full-scale = 2g T = 25°C
Full-scale = 6g
X, Y axis Full-scale = 2g
Best fit straight line Z axis Full-scale = 2g
X, Y axis 4.0 KHz Z axis 2.5 KHz
Full-scale = 2g T = 25°C
@ 5V
Vdd/2-10% Vdd/2 Vdd/2+10% V
Vdd/5–10% Vdd/5 Vdd/5+10% V/g
Vdd/15–10% Vdd/15 Vdd/15+10% V/g
±0.3 %
±0.6 %
100
TBD V
µg/
Hz
Logic 1 level 2.8 Vdd V
Rout Output impedance 100
Cload Capacitive load drive 320 pF
k
1 FUNCTIONALITY
1.1 Sensing element
The THELMA proces s is utilized to c reate a surfac e micro-mach ined accelerom eter. The technolo gy al­lows to carry out suspended silicon structures which are attached to the substrate in a few points called anchors and free to move on a plane parallel to the subst rate itself. To b e com pati ble with the tradi tional packaging techniques a cap is placed on top of t he sensing element to avoi d blockin g the moving p arts during the molding phase.
The equivalent circuit for the sensing element is shown in t he below figure; when a linear acceleration is applied, the proof mass di splaces from its nominal po sition, c ausing an imbalance in t he cap acitive hal f­bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the sense capacitor.
The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum variation of the capacitive load is few tenth of pF.
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