SGS Thomson Microelectronics LF353N, LF353D, LF153, LF253 Datasheet
LF15 3
DUAL J-FET OPERATIONAL AMPLIFIERS
.LOW POWERCONSUMPTION
.WIDE COMMON-MODE (UP TO V
DIFFERENTIALVOLTAGERANGE
CC
+
)AND
.LOW INPUTBIASANDOFFSETCURRENT
.OUTPUTSHORT-CIRCUIT PROTECTION
.HIGH INPUT IMPEDANCE J–FET INPUT
STAGE
.INTERNALFREQUENCY COMPENSATION
.LATCHUPFREE OPERATION
.HIGHSLEWRATE : 16V/µs(typ)
DESC RIP TI ON
The LF353 are high speed J–FE Tinput dual operationalam pl i fiersincorpor at i ngwellma tched ,high
voltageJ–FETandbipo lartransi s tor sinamonolit hi cintegratedci rc ui t.
Thedev i c esfea turehighsl ewrates,lowinputbiasand
offsetcurr ents ,andlow offsetvoltagetemper at ur e
coefficient.
LF253 - LF353
WIDE BANDWIDTH
N
DIP8
(PlasticPackage)
ORDER CODES
Part Number Temperature
o
LF353 0
LF253 –40
LF153 –55
C, +70oC ••
o
C, +105oC ••
o
C, +125oC ••
D
SO8
(PlasticMicropackage)
Package
ND
PIN CONNECTI O NS (topview)
1
2
3
45
June 1998
-
+
8
7
-
+
6
1 - Output 1
2 - Inverting input 1
3 - Non-inverting input 1
-
4-V
CC
5 - Non-inverting input 2
6 - Inverting input 2
7 -Output 2
+
8-V
CC
1/9
LF153 - LF253 - LF353
SCHE MATIC DI AGRAM (each amplifier)
V
CC
input
Non-inverting
input
Inverting
30k
100
100
Ω
Ω
200
Ω
Output
8.2k
Ω
1.3k
V
CC
Offset Null1 Offset Null2
35k
1.3k
35k
100
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
P
T
T
Notes: 1. All voltagevalues,exceptdifferentialvoltage, are withrespect tothe zero reference level (ground) ofthe supply voltageswhere the
Supply Voltage - (note 1) ±18 V
CC
Input Voltage - (note 3) ±15 V
V
i
Differential Input Voltage - (note 2) ±30 V
V
id
Power Dissipation 680 mW
tot
Output Short-circuit Duration - (note 4) Infinite
Operating Free Air Temperature Range LF353
oper
LF253
LF153
Storage Temperature Range –65 to 150
stg
zero reference level is the midpoint between V
2. Differentialvoltages are at the non-inverting inputterminalwith respect tothe inverting inputterminal.
3. The magnitude of theinputvoltage mustnever exceed themagnitude ofthe supply voltage or 15 volts,whichever is less.
4. The output may be shorted to ground or to eithersupply.Temperature and /orsupply voltages mustbe limitedto ensure thatthe
dissipationrating is not exceeded.
+
CC
andV
–
.
CC
0to70
–40 to 105
–55 to 125
o
C
o
C
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LF153 - LF253 - LF353
ELECTRICAL CHARACTERISTICS
= ±15V, T
V
CC
Symbol Parameter
V
DV
A
Input Offset Voltage (RS= 10kΩ)
io
Input Offset Voltage Drift 10 µV/oC
io
Input Offset Current *
I
io
Input Bias Current *
I
ib
Large Signal Voltage Gain (RL=2kΩ,VO=±10V)
vd
SVR Supply Voltage Rejection Ratio (R
I
V
Supply Current (no load)
CC
Input Common Mode Voltage Range ±11 +15
icm
CMR Common Mode Rejection Ratio (R
Ios Output Short-circuit Current
±V
Output Voltage Swing
OPP
SR Slew Rate
(V
t
Rise Time
r
(V
K
OV
Overshoot
(V
GBP Gain Bandwidth Product
(f = 100kHz, T
R
Input Resistance 10
i
THD Total Harmonic Distortion (f = 1kHz, A
C
L
e
Equivalent Input Noise Voltage (f = 1kHz, Rs= 100Ω)15
n
∅m Phase Margin 45 Degrees
V
O1/VO2
* The input bias currents are junction leakagecurrents which approximately double forevery 10oC increase in thejunction temperature.
Channel Separation (AV= 100, T
=25oC (unless otherwise specified)
amb
=25oC
T
amb
≤ T
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
T
amb
T
min.
= 10V, RL=2kΩ, CL= 100pF, T
i
= 20mV, RL=2kΩ,CL= 100pF, T
i
= 20mV, RL=2kΩ,CL= 100pF, T
i
= 100pF, T
≤ T
amb
max.
=25oC
≤ T
≤ T
amb
max.
=25oC
≤ T
≤ T
amb
max.
=25oC
≤ T
≤ T
amb
max.
= 10kΩ)
=25oC
≤ T
amb
≤ T
max.
S
=25oC
≤ T
≤ T
amb
max.
= 10kΩ)
=25oC
≤ T
amb
≤ T
max.
S
=25oC
≤ T
≤ T
amb
max.
=25oCR
≤ T
≤ T
amb
max.
=25oC, Vin= 10mV, RL=2kΩ,CL= 100pF) 2.5 4
amb
=25oC, VO=2VPP) 0.01
amb
=2kΩ
L
= 10kΩ
R
L
RL=2kΩ
= 10kΩ
R
L
=25oC, unity gain) 12 16
amb
=25oC, unity gain) 0.1
amb
amb
= 20dB, RL=2kΩ,
V
=25oC) 120 dB
amb
LF153 - LF253 - LF353
Min. Typ. Max.
20 200
50
200
25
80
86
80
1.4 3.2
-12
70
86
70
10
40 60
10
10
12
12
13.5
10
12
=25oC, unity gain) 10
310
13
5 100
4
20
3.2
60
12
Unit
mV
pA
nA
pA
nA
V/mV
dB
mA
V
dB
mA
V
V/µs
µs
%
MHz
Ω
%
nV
√Hz
3/9
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