SGS Thomson Microelectronics LET9130 Datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-95 CDMA: 865-895 MHz / 28 V
P
OUT =
25 W
EFF. = 29 %
• EDGE: 920-960 MHz / 28 V
P
OUT =
45 W
EFF. = 38 %
• GSM: 920-960 MHz / 28 V
P
OUT =
135 W
EFF. = 51 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET9130
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
M265
epoxy sealed
ORDER CODE
LET9130
PIN CONNECTION
BRANDING
LET9130
1
DESCRIPTION
The
LET9130 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial a nd
industrial applications at frequencies up to 1.0
GHz. The
LET9130 is designed for high gain and
broadband performance operating in common
source mode at 28 V. Its internal matching makes
3
2
1. Drain
2. Source
3. Gate
it ideal for base station applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 15 A
Power Dissipation (@ Tc = 70 °C) 217 W
Storage Temperature -65 to +200 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 0.6 °C/W
February, 6 2003
1/6
LET9130
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
mismatch
P
OUT(EDGE)
η
D(EDGE)
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 26 V
VGS = 0 V VDS = 65 V
VGS = 5 V VDS = 0 V
VDS = 26 V ID = TBD
VGS = 10 V ID = 3 A
VDS = 10 V ID = 9 A
VGS = 0 V VDD = 28 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 920-960 MHz
P
1dB
η
D
G
P
Load
VDD = 28 V IDQ = 1 A
VDD = 28 V IDQ = 1 A P
VDD = 28 V IDQ = 1 A P
V
DD
)
= 28 V IDQ = 1 A P
ALL PHASE ANGLES
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
400 KHz < -60 dBc
600 KHz < -70 dBc
EVM < 3 %
OUT
OUT
OUT
= 130 W
= 130 W
= 130 W
65 V
1 µA
10 µA
1 µA
35V
0.19 0.4 V
12 mho
90 pF
4.8 pF
120 135 W
48 51 %
15 16 dB
10:1 VSWR
45 W
38 %
DYNAMIC (
mismatch
P
OUT(CDMA)
Gp
η
D(CDMA)
(1) IS-95 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
f = 865-895 MHz
P
1dB
η
D
Load
(1)
(CDMA)
(1)
)
VDD = 28 V IDQ = 1 A
VDD = 28 V IDQ = 1 A P
= 28 V IDQ = 1 A P
V
DD
ALL PHASE ANGLES
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
VDD = 26 V IDQ = 800 mA P
750 KHz ACPR: -45dBc
1.98 MHz ACPR: -60dBc
OUT
OUT
= 135 W
= 135 W
= 25 W
OUT
120 135 W
50 55 %
25 W
16 17 dB
29 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
2/6
10:1 VSWR
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