SGS Thomson Microelectronics LET9060S Datasheet
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL wit h TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF. LET9060S’s
superior linearity performance makes it an ideal
solution for base station applications.
= 60 W with 17 dB gain @ 945 MHz / 26V
OUT
LET9060S
RF POWER TRANSISTORS
PRELIMINARY DATA
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
PIN CONNECTION
GATE
BRANDING
LET9060S
SOUR CE
DRAIN
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SM D package. I t has b een
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com /rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 165 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 7 A
Power Dissipation 170 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
March, 25 2003
Junction -Case Thermal Resistance 0.7 °C/W
1/10
LET9060S
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
G
P
η
D
IMD3
P
1dB
G
P
η
D
Load
mismatch
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
= 100 mA
ID
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
(
f = 945 MHz
VDD = 26 V IDQ = 250 mA P
VDD = 26 V IDQ = 250 mA P
V
DD
)
= 26 V IDQ = 250 mA P
= 60 W PEP
OUT
= 60 W PEP
OUT
= 60 W PEP
OUT
VDD = 26 V IDQ = 250 mA
VDD = 26 V IDQ = 250 mA P
VDD = 26 V IDQ = 250 mA P
= 26 V IDQ = 250 mA P
V
DD
OUT
OUT
OUT
= 60 W
= 60 W
= 60 W
ALL PHASE ANGLES
65 V
1 µA
1 µA
2.0 5.0 V
0.7 0.8 V
2.5 mho
74 pF
40 pF
2.8 pF
Ref. 7143417B
17 dB
47 %
-28 dBc
70 W
16.7 dB
61 %
10:1 VSWR
DYNAMIC (
f = 925 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
P
η
D
VDD = 26 V IDQ = 250 mA
VDD = 26 V IDQ = 250 mA P
VDD = 26 V IDQ = 250 mA P
OUT
OUT
= 60 W
= 60 W
65 W
16 dB
56 %
2/10
IMPEDANCE DATA
LET9060S
D
Z
DL
Typical Input
Impedan ce
Typical Drain
Load Impedance
G
Zin
S
FREQ. MHz
(Ω)Z
IN
DL
(Ω)
Z
860 0.65 - j 0.05 2.0 + j 0.1
880 0.75 - j 0.6 2.0 + j 0.1
900 0.9 - j 1.4 1.4 + j 0.2
920 0.4 - j 1.3 1.4 + j 0.5
940 0.4 - j 0.8 1.2 + j 0.3
960 0.5 - j 1.6 1.8 + j 1.0
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
MOISTURE SENS IT I VITY LEVEL
Test Methodology Rating
J-STD-020B MSL 3
3/10
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