SGS Thomson Microelectronics LET9045S Datasheet

Ldmos Enhanced Technology in Plastic Package

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

• NEW RF PLASTIC PACKAGE

• HIGH GAIN

• ESD PROTECTION

• AVAILABLE IN TAPE & REEL wit h TR SUFFIX

= 45 W with 17 dB gain MIN @ 945 MHz /

OUT

28V

LET9045S

RF POWER TRANSISTORS

TARGET DATA

PowerSO-10RF

(straight lead)

ORDER CODE

LET9045S

BRANDING

LET9045S

DESCRIPTION

PIN CONNECTION

The LET9045S is a common sourc e N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band

SOUR CE

commercial and industrial applications. It operates
at 28 V in common source mode at frequencies up
to 1 GHz. LET9045S boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD pla stic
RF power package, PowerSO-10RF. LET9045S’s

GATE

DRAIN

superior linearity performance makes it an ideal
solution for base station applications.

The PowerSO-10 plastic package, designed to
offer hig h reliability, is the first ST JEDE C
approved, high power SM D package. I t has b een
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 5 A
Power Dissipation 160 W

Storage Temperature -65 to +150 °C

CASE

= 25°C)

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

THERMA L D ATA

R

th(j-c)

February, 27 2003

Junction -Case Thermal Resistance 0.85 °C/W

1/9

LET9045S

ELECTRICAL SPECIFICATION (T

CASE

= 25°C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

G

P

η

D

IMD3

P

1dB

G

P

η

D

Load

mismatch

VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 28 V
VGS = 5 V VDS = 0 V
VDS = 28 V

= 250 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

(

f = 945 MHz

VDD = 28 V IDQ = 250 mA P
VDD = 28 V IDQ = 250 mA P
V

DD

)

= 28 V IDQ = 250 mA P

= 45 W PEP

OUT

= 45 W PEP

OUT

= 45 W PEP

OUT

VDD = 28 V IDQ = 250 mA
VDD = 28 V IDQ = 250 mA P
VDD = 28 V IDQ = 250 mA P

= 28 V IDQ = 250 mA P

V

DD

OUT
OUT
OUT

= 45 W
= 45 W
= 45 W

ALL PHASE ANGLES

65 V

1 µA
1 µA

2.0 5.0 V

0.6 V

2.0 mho
60 pF
33 pF

2.2 pF

17 dB

44 %

-28 dBc

60 W

17.8 dB
59 %

10:1 VSWR

DYNAMIC (

f = 925 - 960 MHz

)

Symbol Test Conditions Min. Typ. Max. Unit

P

1dB

G

P

η

D

VDD = 28 V IDQ = 250 mA
VDD = 28 V IDQ = 250 mA P
VDD = 28 V IDQ = 250 mA P

OUT
OUT

= 45 W
= 45 W

55 W

17.2 dB
55 %

ESD PROTECTION CHARACTERISTICS

Test Conditions Class

Human Body Model 2
Machine Model M3

MOISTURE SENS IT I VITY LEVEL

Test Methodology Rating

J-STD-020B MSL 3

2/9

TYPICAL PERFORMANCE
Power Gain Vs Output Power

LET9045S

Power Gain Vs Output Power

1000

100

C (pF)

10

1

Ciss

Coss

Crss

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

Vds (V)

f = 1 M Hz

Efficiency Vs Output Power

70

60

50

40

Nd (%)

30

20

10

0

0 10203040506070

Pout (W)

Vdd = 28 V
Idq = 250 mA
f = 945 MHz

20

19

18

17

16

Gp (dB)

15

14

13

12

Idq = 600 mA
Idq = 400 mA

Idq = 100 mA
Idq = 250 mA

Idq = 100 mA

Vdd = 28 V
f = 945 MHz

1 10 100

Pout (W)

Ouput Power Vs Drain Voltage

90

80

70

60

50

40

Pout (W)

30

20

10

0

10 12 14 16 18 20 22 24 26 28 30 32

Vdd (V)

Pin = 1.5 W

Pin = 1 W

Idq = 250 mA
f = 945 MHz

Drain Current Vs Gate-Source Voltage

1.5

1.0

Idq (A)

0.5

Vdd = 28 V

0.0
012345

Vgs ( V)

3/9