SGS Thomson Microelectronics LET9006 Datasheet
Ldmos Enhanced Technology in Plastic Package
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
= 6 W with 17 dB gain @ 960 MHz / 26V
OUT
LET9006
RF POWER TRANSISTORS
TARGET DATA
PowerFLAT
™(5x5)
ORDER CODE
LET9006
BRANDING
9006
DESCRIPTION
The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
PIN CONNECTION
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications
requiring high linearity.
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 1 A
Power Dissipation (@ Tc = 70°C) 16 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance 5 °C/W
1/4
LET9006
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
DYNAMIC (
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
(1)
η
D
Load
mismatch
(1) 1 dB Compression point
VGS = 0 V ID = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V
ID
= TBD
VGS = 10 V ID = 0.5 A
VDS = 10 V ID = 800 mA
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 960 MHz
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
= 26 V IDQ = TBD P
V
DD
)
= 6 W
OUT
= 6 W
OUT
ALL PHASE ANGLES
65
1 µA
1 µA
2.0 5.0 V
0.9 V
TBD mho
TBD pF
TBD pF
TBD pF
78 W
55 65 %
10:1 VSWR
DYNAMIC (
f = 920 - 960 MHz
)
Symbol Test Conditions Min. Typ. Max. Unit
(1)
P
out
G
P
(1)
η
D
(1) 1 dB Compression point
VDD = 26 V IDQ = TBD
V
= 26 V IDQ = TBD P
DD
VDD = 26 V IDQ = TBD P
OUT
OUT
= 6 W
= 6 W
67 W
17 dB
55 60 %
2/4
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