SGS Thomson Microelectronics LET8180 Datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION,
PUSH-PULL
• P
= 220 W with 17 dB TYP. gain @ 860 MHz
OUT
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET8180 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET8180 is des igned for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes
it ideal for base station applications requ iring high
linearity.
LET8180
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M252
epoxy sealed
ORDER CODE
LET8180
PIN CONNECTION
1
5
4
BRANDING
LET8180
2
3
1. Drain
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 18 A
Power Dissipation (@ Tc =+70 °C) 289 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
4. Gate
5. Gate
THERMA L D ATA
R
th(j-c)
January, 28 2003
Junction -Case Thermal Resistance 0.45 °C/W
1/4
LET8180
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Includes Internal Input Moscap.
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
OUT
(1)
η
D
(2)
G
P
IMD3
Load
mismatch
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 32 V
VGS = 5 V VDS = 0 V
VDS = 32 V
ID
= TBD
VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A
*VGS = 0 V VDS = 32 V f = 1 MHz
VGS = 0 V VDS = 32 V f = 1 MHz
VGS = 0 V VDS = 32 V f = 1 MHz
f = 860 MHz
(1)
VDD = 32 V IDQ = TBD
)
VDD = 32 V IDQ = TBD
VDD = 32 V IDQ = TBD P
(2)
VDD = 32 V IDQ = TBD P
= 32 V IDQ = TBD P
V
DD
= 200 W PEP
OUT
= 200 W PEP
OUT
= 200 W
OUT
ALL PHASE ANGLES
65 V
10 µA
1 µA
2.5 4.5 V
0.28 0.45 V
2.6 mho
TBD pF
70 pF
2.5 pF
200 220 W
50 60 %
16 17 dB
-31 dBc
10:1 VSWR
DYNAMIC (
P
OUT
η
D
G
P
(1) 1 dB Compression point
(2) f1 = 860 MHz, f2 = 860.1 MHz
f = 470 - 860 MHz
(1)
VDD = 32 V IDQ = TBD
(1)
(1)
VDD = 32 V IDQ = TBD
VDD = 32 V IDQ = TBD
)
180 W
50 %
14.5 dB
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
2/4
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