SGS Thomson Microelectronics LET21030C Datasheet
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• P
= 30 W with 11 dB gain @ 2170 MHz
OUT
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION
LET21030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
CASE 465E–03, STYLE 1
epoxy sealed
ORDER CODE
LET21030C
BRANDING
LET21030C
DESCRIPTION
The
LET21030C is a common s ource N-Channel
enhancement-mode lateral Field-Effect RF power
PIN CONNECTION
transistor designed for broadband commercial a nd
industrial applications at frequencies up to 2.1
GHz. The
LET21030C is design ed for high gain and
1
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
2
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 4 A
Power Dissipation (@ Tc = 70 °C) 65 W
Storage Temperature -65 to +200 °C
CASE
= 25 °C)
3
1. Drain
2. Gate
3. Source
THERMA L D ATA
R
th(j-c)
January, 24 2003
Junction -Case Thermal Resistance 2 °C/W
1/4
LET21030C
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Including input matching capaci tor in package ?
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
mismatch
VGS = 0 V ID = 20 µA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 28 V ID = TBD
VGS = 10 V ID = 1 A
VDS = 10 V ID = 1 A
*VGS = 0 V VDD = 26 V f = 1 MHz
VGS = 0 V VDD = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2170 MHz
(1)
OUT
(1)
η
D
Load
)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
= 26 V P
V
DD
OUT
= 30 W
ALL PHASE ANGLES
65 V
1 µA
1 µA
2 4.5 V
0.29 0.4 V
2 mho
TBD pF
TBD pF
TBD pF
30 35 W
45 50 %
10:1 VSWR
DYNAMIC (
P
OUT(W-CDMA)
η
D(W-CDMA)
(1) 1 dB Compression point
(2) +/- 5 MHz offset; 3.84 MHz Bandwitdh
f = 2110 - 2170 MHz
(1)
P
OUT
(1)
η
D
G
P
(2)
(2)
)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD mA P
OUT
= 30 W
ACPR -45 dBc 5 W
ACPR -45 dBc 20 %
25 30 W
40 45 %
11 dB
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
2/4
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