SGS Thomson Microelectronics LET21004 Datasheet
Ldmos Enhanced Technology in Plastic Package
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTIO N
= 4 W with 11 dB gain @ 2170 MHz / 26 V
OUT
LET21004
RF POWER TRANSISTORS
TARGET DATA
™(5x5)
BRANDING
21004
DESCRIPTION
PowerFLAT
ORDER CODE
LET21004
The LET21004 is a comm on source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
PIN CONNECTION
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21004 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
LET21004’s superior linearity performance makes
it an ideal solution for base station
applications.
TOP VIEW
°
= 25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 1 A
Power Dissipation (@ Tc = 70 °C) TBD W
Storage Temperature -65 to +150 °C
CASE
C)
THERMAL DATA (T
R
th(j-c)
April, 15 2003
Junction -Case Thermal Resistance TBD °C/W
CASE
= 70 °C)
1/4
LET21004
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
out
η
D
Load
mismatch
VGS = 0 V IDS = 1 mA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 28 V
ID
= TBD
VGS = 10 V ID = 0.3 A
VDS = 10 V ID = 0.3 A
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2170 MHz
(1)
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
= 26 V IDQ = TBD P
V
DD
)
= 4 W
OUT
ALL PHASE ANGLES
65 V
1 µA
1 µA
2.5 5.0 V
TBD 0.3 V
TBD mho
TBD pF
TBD pF
TBD pF
45 W
45 50 %
10:1 VSWR
DYNAMIC (
P
out
η
G
P
OUT(W-CDMA)
η
D(W-CDMA)
(1) 1 dB Compression point
f = 2110 - 2170 MHz
(1)
(1)
D
P
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
ACPR: -45dBc 1 W
ACPR: -45dBc 25 %
)
34 W
40 45 %
OUT
= 4 W
11 13 dB
2/4
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