SGS Thomson Microelectronics LET19060C Datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-97 CDMA PERFORMANCES
P
OUT =
7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
P
OUT =
30 W
EFF. = 25 %
• GSM PERFORMANCES
P
OUT =
65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET19060C
PIN CONNECTION
BRANDING
LET19060C
DESCRIPTION
1
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
3
source mode at 26 V. Its internal matching makes
it ideal for base station applications requ iring high
linearity.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 200 °C
T
STG
Drain-Source Voltage 65 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 7 A
Power Dissipation (@ Tc = 70 °C) 130 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
2
1. Drain
2. Source
3. Gate
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 1.0 °C/W
January, 24 2003
1/4
LET19060C
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC (Per Section)
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
* Includes Internal Matching
Symbol Test Conditions Min. Typ. Max. Unit
DYNAMIC (
P
η
D
Load
mismatch
VGS = 0 V ID = 10 µA
VGS = 0 V VDS = 26 V
VGS = 5 V VDS = 0 V
VDS = 26 V ID = TBD
VGS = 10 V ID = 2 A
VDS = 10 V ID = 2 A
*VGS = 0 V VDS = 26 V f = 1 MHz
*VGS = 0 V VDS = 26 V f = 1 MHz
VGS = 0 V VDS = 26 V f = 1 MHz
f = 2000 MHz
1dB
(1)
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
V
DD
)
= 26 V IDQ = TBD P
OUT
ALL PHASE ANGLES
= 60 W
65 V
6 µA
1 µA
2.5 4.5 V
0.27 V
4.7 mho
TBD pF
TBD pF
TBD pF
70 75 W
45 50 %
10:1 VSWR
DYNAMIC (
P
η
P
OUT(CDMA)
η
D(CDMA)
DYNAMIC (
P
η
P
OUT(EDGE)
η
D(EDGE)
(1) 1 dB Compression point
f = 1930 - 1990 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD
885 KHz < -47 dBc
(2)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
885 KHz < -47 dBc
(2)
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
G
D
1dB
P
(1)
f = 1805 - 1880 MHz
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD P
VDD = 26 V IDQ = TBD
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
G
D
1dB
P
(1)
)
= 60 W
OUT
)
= 60 W
OUT
(2) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
60 65 W
11 13 dB
40 45 %
7.5 W
18 %
60 65 W
11 13 dB
45 %
30 W
25 %
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
2/4
Loading...