SGS Thomson Microelectronics LDP24A Datasheet
®
FEATURES
TRANSIENT VOLTAGE SUPPRESSOR
n
DIODE ESPECIALLY DESIGNED FOR
LOAD DUMP PROTECTION
COMPLIANT WITH MAIN STANDARDS
n
SUCH AS:
ISO / DTR 7637
DESCRIPTION
Transient voltage suppressor diodes especially
useful in protecting integrated circuits, MOS, hybrids and other overvoltages sensitive semiconductors and components.
LDP24A
TRANSIENT PROTECTION
LOAD DUMP
AG
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
PP
P Power dissipation on infinite heatsink T
I
FSM
T
stg
T
T
L
Peak pulse load dump overvoltage
See note 1
Non repetitive surge peak forward current. Tjinitial = 25°C
Storage temperature range. - 65 to + 175 °C
Maximum operating temperature 175 °C
j
Maximum lead temperature for soldering
during 10 sec at 4 mm from case.
T
= 85°C 100 V
amb
= 100°C 5 W
amb
tp=10ms
500 A
230 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junction ambient thermal resistance on infinite heatsink
Note 1: Forsurges greater than the maximum values, the diode will present a short-circuit Anode - Cathode.
L
lead
=10mm
15 °C/W
April 2000 - Ed: 4B 1/5
LDP24A
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
V
V
I
αT Temperature coefficient of V
I
V
Symbol Test Conditions Min. Typ. Max. Unit
I
I
V
V
αT 10 10
Stand-off voltage.
RM
Breakdown voltage.
BR
Clamping voltage.
CL
PP
C Capacitance
RM
pp
RM
BR
CL
C F = 1MHz V
Peak pulse current.
.
BR
Leakage current at V
Peak forward voltage drop (IFM= 10A)
F
= 0.9 Volt Typ.
V
F
Pulse duration: 300ms 30 A
TL= 25°C
= 85°C
T
L
TL= 25°C IR= 1mA 25 32 V
TL= 85°C see table1 40 V
RM
V
=24V
RM
=24V
V
RM
= 0V 8000 pF
R
VV
CLVBR
V
RM
I
I
F
V
F
I
RM
I
PP
50
300
µA
µA
-4
V
/°C
LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.
Table 1
Impulse N°5
Vs (V)
Vbat (V)
Ri (Ω)
t (ms)
tr (ms)
Number
60s between each pulse
(*) Generator setting
86.5
13.5
2
200 (*)
<10
5
U(V)
2/5
Vbat
Open circuit (voltage curve)
(Pulse test n°5)
t
tr
90%
Vs
offset
10% / 13.5V
10%
0
t
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