®
FEATURES
TRANSIENT VOLTAGE SUPPRESSOR
n
DIODE ESPECIALLY DESIGNED FOR
LOAD DUMP PROTECTION
COMPLIANT WITH MAIN STANDARDS
n
SUCH AS:
ISO / DTR 7637
DESCRIPTION
Transient voltage suppressor diodes especially
useful in protecting integrated circuits, MOS, hybrids and other overvoltages sensitive semiconductors and components.
LDP24A
TRANSIENT PROTECTION
LOAD DUMP
AG
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
PP
P Power dissipation on infinite heatsink T
I
FSM
T
stg
T
T
L
Peak pulse load dump overvoltage
See note 1
Non repetitive surge peak forward current. Tjinitial = 25°C
Storage temperature range. - 65 to + 175 °C
Maximum operating temperature 175 °C
j
Maximum lead temperature for soldering
during 10 sec at 4 mm from case.
T
= 85°C 100 V
amb
= 100°C 5 W
amb
tp=10ms
500 A
230 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junction ambient thermal resistance on infinite heatsink
Note 1: Forsurges greater than the maximum values, the diode will present a short-circuit Anode - Cathode.
L
lead
=10mm
15 °C/W
April 2000 - Ed: 4B 1/5
LDP24A
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
V
V
I
αT Temperature coefficient of V
I
V
Symbol Test Conditions Min. Typ. Max. Unit
I
I
V
V
αT 10 10
Stand-off voltage.
RM
Breakdown voltage.
BR
Clamping voltage.
CL
PP
C Capacitance
RM
pp
RM
BR
CL
C F = 1MHz V
Peak pulse current.
.
BR
Leakage current at V
Peak forward voltage drop (IFM= 10A)
F
= 0.9 Volt Typ.
V
F
Pulse duration: 300ms 30 A
TL= 25°C
= 85°C
T
L
TL= 25°C IR= 1mA 25 32 V
TL= 85°C see table1 40 V
RM
V
=24V
RM
=24V
V
RM
= 0V 8000 pF
R
VV
CLVBR
V
RM
I
I
F
V
F
I
RM
I
PP
50
300
µA
µA
-4
V
/°C
LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.
Table 1
Impulse N°5
Vs (V)
Vbat (V)
Ri (Ω)
t (ms)
tr (ms)
Number
60s between each pulse
(*) Generator setting
86.5
13.5
2
200 (*)
<10
5
U(V)
2/5
Vbat
Open circuit (voltage curve)
(Pulse test n°5)
t
tr
90%
Vs
offset
10% / 13.5V
10%
0
t
LDP24A
Fig. 1:Peakpulse power versus exponential pulse
duration (Tj initial=85°C).
Ppp(kW)
10.0
5.0
2.0
1.0
0.5
0.2
0.1
1 2 5 10 20 50 100
tp(ms)
Fig. 3:Relative variation of peak pulsepowerversus
junction temperature.
Ppp[Tj] / Ppp [T j in itia l= 8 5 °C]
1.2
1.0
Fig. 2 : Peak pulse current versus exponential
pulse duration (Tj initial=85°C).
Ipp(A)
200
100
50
20
tp(ms)
10
1 2 5 10 20 50 100
Fig. 4: Continous power dissipation versus ambient
temperature.
P(W)
6
5
Rth(j-a)=Rth(j-l)
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175 200
Tj (°C)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board FR4, e(Cu)=35µm, SCu=1cm
Zth(j-a)(°C/W)
100.0
Lleads=10mm
10.0
1.0
tp(s)
0.1
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
2
).
4
3
2
1
0
0 25 50 75 100 125 150 175
Rth(j-a)=50°C/W
Tamb(°C)
Fig. 6 : Peak forward voltage drop versus peak
forward current (typical values).
IFM(A)
200
100
Tj=125°C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=25°C
VFM(V)
3/5
LDP24A
Fig. 7: Non repetitive surge peak forward current
versus sinusoidal pulse duration and corresponding value of I
2
t.
Fig. 8: Junction capacitance versus reverse applied
voltage.
IFSM(A) ,I²t(A²s)
5000
Tj initial=25°C
2000
1000
500
200
100
10 20 50 100
I²t
IFSM
tp(ms)
C(nF)
10
5
2
VR(V)
1
12 51020 50
F=1MHz
Vosc=30mV
ORDER CODE
4/5
LDP 2 4 A
Load Dump Protection
Stand Off Voltage
AG Case
PACKAGE MECHANICAL DATA
AG (Plastic)
LDP24A
BA B
note 1
L1
O
/
D
DIMENSIONS
REF.
Min. Max. Min. Max.
A 9 0.354
B 20 0.787
∅ C 8 0.315
∅ D 1.35 1.45 0.053 0.057
L1 1.27 0.050
/
O
C
note 1
L1
/
O
D
note 2
NOTESMillimeters Inches
1- The lead is not controlled within zone L1.
2- The minimum axial length within which the device may be
placed bent at right angles is 0.79" (20 mm).
Type Marking Package Weight Base qty Delivery mode
LDP24A LDP24A AG 2.16g 100 Ammopack
LDP24ARL LDP24A AG 2.16g 1000 Tape & Reel
n
Resin meets UL94-V0
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