SGS Thomson Microelectronics LCDP1521 Datasheet
®
LCDP1521
DUAL LINE PROGRAMMABLE TRANSIENT VOLTAGE
A.S.D.™
SUPPRESSOR FOR SLIC PROTECTION
FEATURES
Dual line programmable transient voltage
■
suppressor
Wide negative firing voltage range:
■
= -150 V max.
V
MGL
Low dynamic switching voltages: VFPand V
■
Low gate triggering current: IGT=5mAmax
■
Peak pulse current: IPP= 15 A (10/1000 µs)
■
Holding current: IH= 150 mA min
■
DGL
DESCRIPTION
This device has been especially designed to
protect 2 new high voltage, as well as classical
SLICs, against transient overvoltages.
Positive overvoltages are clamped by 2 diodes.
Negative surges are suppressed by 2 thyristors,
their breakdown voltage being referenced to -V
BAT
through the gate.
This component presents a very low gate
triggering current (I
) in order to reduce the cur-
GT
rent consumption on printed circuit board during
the firing phase.
SO-8
FUNCTIONAL DIAGRAM
BENEFITS
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
Trisils are used to help equipment to meet various
standards such as UL1950, IEC950 / CSA C22.2,
UL1459 and FCC part68. Trisils have UL94 V0
resin approved (Trisils are UL497B approved (file:
E136224)).
March 2002 - Ed: 1A
1
TIP 1 RING 1
2
GATE
3
GATE
TIP 2
4
8
7
6
5
GND
GND
RING 2
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LCDP1521
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
STANDARD
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
Peak Surge
Voltage
(V)
2500
1000
Voltage
Waveform
2/10µs
10/1000µs
Required
peak current
(A)
500
100
Current
Waveform
2/10µs
10/1000µs
Minimum serial
resistor to meet
5000 2/10µs 500 2/10µs 62
1500 2/10µs 100 2/10µs 7
6000
1500
8000
15000
4000
2000
4000
2000
4000
4000
1500
800
10/700µs 150
5/310µs 200
37.5
1/60 ns ESD contact discharge
ESD air discharge
10/700µs 100
5/310µs 120
50
1.2/50µs 100
1/20µs 27
50
10/700µs
1.2/50µs
10/160µs
10/560µs
100
100
200
100
5/310µs
8/20µs
10/160µs
10/560µs
1000 9/720µs 25 5/320µs 0
standard (Ω)
31
57
20
0
0
40
0
120
27
43
32
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a)
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
I
GT
I
H
I
RM
I
RG
V
RM
V
GT
V
F
V
FP
V
DGL
V
GATE
V
RG
C
Junction to ambient
= 25°C)
amb
Gate triggering current
Holding current
Reverse leakage current LINE / GND
Reverse leakage current GATE / LINE
Reverse voltage LINE / GND
Gate triggering voltage
Forward drop voltage LINE / GND
Peak forward voltage LINE / GND
Dynamic switching voltage GATE / LINE
GATE / GND voltage
Reverse voltage GATE / LINE
Capacitance LINE / GND
170 °C/W
I
V
V
RM
R
V
F
I
RM
I
R
I
H
I
PP
V
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LCDP1521
ABSOLUTE RATINGS (T
= 25°C, unless otherwise specified).
amb
Symbol Parameter Value Unit
I
I
TSM
PP
Peak pulse current (see note1)
Non repetitive surge peak on-state
current
10/1000µs
8/20µs
10/560µs
5/310µs
10/160µs
1/20µs
2/10µs
t = 10ms
t=1s
15
60
20
25
30
60
70
5
3.5
(50Hz sinusoidal)
I2t
I
t = 10ms 0.125 A
2
t value for fusing
(50Hz sinusoidal)
I
GSM
Maximum gate current
t = 10ms 2 A
(50Hz sinusoidal)
V
V
MLG
MGL
T
Tj
T
stg
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
Storage temperature range
Maximum junction temperature
L
Maximum lead temperature for soldering during 10s
-40°C < Tamb < +85°C
-40°C < Tamb < +85°C
-150
-150
-55to+150
150
260 °C
A
A
V
°C
2
s
Repetitive peak pulse current
tr: rise time (µs)
tp: pulse duration (µs)
ex: Pulse waveform 10/1000µs
tr = 10µs tp = 1000µs
PARAMETERS RELATED TO THE DIODE LINE / GND (T
amb
%I
100
50
0
= 25°C)
PP
t
t
p
r
t
Symbol Test conditions Max Unit
V
F
V
FP
(note 1)
Note 1:seetest circuit for VFP;RSis the protection resistor located on the line card.
IF=1A
10/700µs
1.2/50µs
2/10µs
1.5kV
1.5kV
2.5kV
R
R
R
S
S
S
= 110Ω
=60Ω
= 245Ω
t = 500µs 2 V
I
PP
I
PP
I
PP
= 10A
= 15A
= 10A
5
10
20
V
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