Datasheet L9611C, L9610C Datasheet (SGS Thomson Microelectronics)

PWMPOWER MOS CONTROLLER

.HIGH EFFICIENCY DUE TO PWM CONTROL

ANDPOWERMOSDRIVER

.LOADDUMP PROTECTION

.LOADPOWERLIMITATION

.EXTERNALPOWERMOSPROTECTION

.LIMITEDOUTPUTVOLTAGESLEWRATE

DESCRIPTION

The L9610C/11Cis a monolithic integrated circuit
workingin PWM mode as controller of an external
powerMOStransistorinHighSide Driver configura­tion.

Features of the device include controlled slope of
the leadingand trailing edgeof the gate drivingvol­tage,linearcurrentlimitingwithprotectiontimer,set­tableswitchingfrequencyfo,TTLcompatibleenable
function,protectionstatus ouput pin. Thedevice is
mountedin SO16micropackage,and DIP16pack­age.

L9610C
L9611C

SO16

ORDERING NUMBERS: L9610C

DIP16

L9611C

BLOCK DIAGRAM

November 1991

This is advanced informationon a new product now in development or undergoing evaluation. Details are subject to change withoutnotice.

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L9610C - L9611C

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

Max. Supply Voltage 26 V

S

Transient Peak Supply Voltage (R1 ≥ 100Ω):
Load Dump:

5ms ≤ t

≤ 10ms; τfFall Time Constant = 100ms; R

rise

SOURCE

≥ 0.5Ω

60

Field Decay:
5ms ≤ t

≤ 10ms; τrRise Time Constant = 33ms; R

fall

SOURCE

≥ 10Ω

–80

V

V

T

J/Tstg

Low Energy Spike: t

I

V

Max. Supply Current (t < 300 ms) 0.3 A

S

Input Voltage –0.3 < VIN<VS– 2.5 V

IN

rise

=1µs, t

Junction and Storage Temperature Range – 55 to 150 °C

= 2ms, R

fall

SOURCE

≥ 10Ω

±100

THERMAL DATA

Symbol Parameter SO16 DIP16 Value

R

th j-amb

Thermal Resistance Junction-alumina Max 50 90 °C/W

PI N CONNECTI O N (Top view)

V

2/12

L9610C - L9611C

PIN FUNCTIONS

Pin Name Functions

1 INT A Capacitor Connected Between this Pin and Out

Voltage Slew Rate.

2 IN Analog Input Controlling the PWM Ratio. The operating range of the input

.

R

3V

R

voltage is 0 to V

Output of an Internal Voltage Reference
4 EN TTL Compatible Input for Switching off the Output.
5 PWL If this Pin is Connected to GND and V

Frequency f

are Reduced : this Allows to Transfera Costant Power to the

o

> 13 V, the Duty Cycle and the

S

Load.
6 Osc Current Sink and Source StageConnection of a Triangle Oscillator with

Definite Voltage Swing.
7 IND Input of an Operational Amplifier for Short Current Sensing and Regulation.
8 NC Not Connected.
9V

S

Common Supply Voltage Input

10 GND Common Ground Connection
11 TIM A Capacitor Connected Between this Pin and GND Defines the Protection

Delay Time.

12 MON Open Collector Monitoring Output off the PowerMOS Protection.

13,15 P2, P1 Connection for the Charge Pump Capacitor.

14 BS The Capacitor Connected Between thisPin and theSource of the Power MOS

Allows to Bootstrap the Gate Driving Voltage.

16 Out G Output for Driving the Gate of the External PowerMOS.

Defines the GATE

G

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L9610C - L9611C

ELECTRICAL CHARACTERISITCS (T

=–40°Cto85°C;6V<VS<16 V unless otherwise specified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

S

I

q

V

SC

V

SH

V

SL

V

R

I

R

V

INL

K

F

K

S

Operating Supply Voltage 6 16 V
Quiescent Current 2.5 6 mA
Internal Supply Voltage Clamp IS= 200mA 28 32 36 V
Supply Voltage High Threshold 16 18.5 21 V
Supply Voltage Low Threshold 4 5 6 V
Reference Voltage 3.3 3.5 3.7 V
Reference Current ∆VR≤ 100mV 1 mA
Input Low Threshold 0.13 0.15 0.2 VIN/V
Oscillator Freq. Constant Note 1 800 2500 nF/s
Gate Voltage Slew Rate

Note 2 3 5 9 nFV/ms

Constant
Protection Time Delay Constant Note 3 0.12 0.44 ms/nF
Sense Input Volt. 80 100 120 mV
Gate Driving Volt. above V

VS= 16V 8 16 V

S

Gate Voltage in OFF Condition IG= 100 µA 1.2 V
Input Current – 5 – 1 µA
Low Enable Voltage 0.8 V
High Enable Voltage 2.0 V

V

V

V
V

K

T

V

Si

GON

GOFF

I

IN
ENL
ENH

IEN Enable Input Current 2 µA

SR Slew Rate Without C

V

MONsat

Saturation Voltage (pin 12) I

MON = 2.5 mA

S

0.5 V/µs

1.5 V

R

Notes : 1. fo=KF/CF.

2. dV

3. t

prot=KTCT

/dt= Ks/Cs.

G

.

FUNCTIONAL DE SCRI PTION

PULSEWIDTH COMPARATOR
A ground compatible comparator generates the

PWMsignal whichcontrols thegate of theexternal
powerMOS.

Theslopes of the leadingand trailing edges of the
gate driving signal are defined by the external ca­pacitorC

accordingto :

S

dV

/dt= KS/C

G

S

Thisfeature allowsto optimize theswitching speed
for the powerand RFIperformancebest suitedfor
the application.

Thelowerlimit of theduty cycle is fixedat 15% of
the ratio between the input and the reference vol­tage(seefig.1).Inputvoltageslowerthanthisvalue
disable the internal oscillator signal and therefore
the gate driver.

GROUNDCOMPATIBLETRIANGLE
OSCILLATOR

The triangle oscillator provides the switching fre­quencyf

setbytheexternalcapacitorCFaccording

o

to :

f

o=KF/CF

If the pin PWL (power limitation) is connected to
ground and Vs is higher than the PWL threshold
voltage,the duty cycle and thef

frequencyare re-

o

duced:this allowstotransferacostantpowertothe
load (seefig.2).

TIMERAND PROTECTIONLATCH
When an overcurrent occurs, the device starts

chargingthe externalcapacitorC

; the protection

T

time is set accordingto :

.

t

prot=KT

C

T

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L9610C - L9611C

Afterthe overcurrentprotectiontimeis reached,the
powerMOSisswitched-off; thisconditionis latched
by settinganinternalflip-flopandis externallymoni­tored by the low state of theMON pin.

Toresetthelatchthesupplyvoltagehastofallbelow

or the devicemust beswitchedoff.

V

SL

UNDER AND OVERVOLTAGE SENSE WITH
LOADDUMP PROTECTION

The undervoltagedetectionfeatureresetsthetimer
and switchesoff theoutputdrivingsignal when the
supplyvoltageisless than V

SL

.

If the supply voltage exceeds the max operating
supply voltage value, an internal comparator dis­ablesthe chargepump,theoscillatorandtheexter­nal powerMOS.

Figure1 : TypicalTransferCurve.

In both casesthe thresholdsare providedwith suit­able hysteresisvalues.

Theloaddumpprotectionfunctionallowsthedevice
to withstand- for alimited time - highovervoltages.
It consistsof an active clamping diodewhich limits
the circuitsupplyvoltageto V

andanexternal

CLAMP

current limiting resistor R1. The maximum pulse
supply current (see abs. max. ratings is equal to

0.3A.Thereforethemaximum loaddumpvoltageis
givenby :

V

DUMP=VSC

+0.3R

1

In this conditionthe gate of the powerMOSis held
at the GNDpin potentialand thusthe loadvoltage
is :

V

=Vs-V

L

CLAMP-VGS

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L9610C - L9611C

Figure2 : The Typical Waveformsfor the PowerLimitationFunction.

SHORTCIRCUITCURRENT REGULATION
The maximum load currentin the short circuitcon-

dition can be chosen by the value of the current
sensingresistorR

I

SC=VSI/RS

accordingto :

S

Two identicalVScompatiblecomparators are pro­vided to realize the short circuit protection.

After reaching the lower thresholdvoltage (typical
value V

-10 mV), the first comparator enablesthe

SI

timer and the gateis drivenwith the fullcontinuous
pump voltage : when the upper threshold voltage
valueis reachedthe secondcomparatormaintains
the chosenI

drivingtheNMOSgatein continuous

SC

mode.
This function - showed in fig. 3 - speeds up the

switchon phase fora lamp as a load.
BANDGAP VOLTAGEREFERENCE

The circuitprovidesa referencevoltagewhichmay

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beusedas controlinputvoltagethrougha resistive
divider.Thisreferenceisprotectedagainsttheshort
circuitcurrent.

CHARGEPUMP
The charge pump circuit holds the N-MOS gate

abovethesupplyvoltageduringtheONphase.This
circuitconsistsofanRCastablewhichdrivesacom­paratorwith a push-pulloutputstage. The external
chargepumpcapacitorC

mustbeat least equalto

P

the NMOSparasiticinput capacitance.
ForfastgatevoltagevariationC

mustbeincreased

P

orthebootstrapfunctioncanbeused.Thebootstrap
capacitorshould be at least 10 times greater than
the powerMOSparasiticcapacitance.

The chargepump voltageV

V

=2VS-VBE-V

PUMP

canreach to :

PUMP

CESAT

Thecircuitis disabledifthe supplyvoltageis higher

SH

.

thanV

Figure3 : The Typical Waveformsfor ShortCircuit Current Condition.

L9610C - L9611C

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L9610C - L9611C

APP LI CATI O N CI RCUI T
Figure4.

Note : Allnode voltages arereferred to groundpin (GND)

The currents flowing in the arrow direction are assumed positive

without C
without C

= 1nF

BS:CP

mustbe at least 10 times higher than the gate capacitance : CP= 100 pF.

BS:CBS

CONTROLLINGA 120W HALOGEN LAMP WITH
THEL9610C/11CDIMMER

The L9610C/11CLamp Dimmer is used to control
the brightnessof vehicleheadlampsusingH4 type
lamps(see fig. 5). With switchS1openthe fullsup­ply voltage is applied to the lamps : closing the

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switch it is a possible to reduce the averagelamp
voltageas desired:

R3

VL = VS

R2+ R3

If pin 5 is connected to ground the average lamp
voltageis constant,even forsupply voltagesin ex­cessof 13V.

Figure5 : ApplicationCircuit.

L9610C - L9611C

The sensing resistor R

and timing capacitor C

S

shouldbe dimensionedaccordingto :

V

RS=

2Inom (@Vs=14V)

2 xlimitation time

C

=

t

Si

K

T

In normal conditions(VCC=14V, maximum bright­ness) the voltage drop across the sense resistor
must be 50 mV. The current limiter intervenes
attwicethe nominalcurrent,I

nom

.

ThetimingcapacitorC

t

=3.5V)mustbechosen

t(Vct

sothatthedelay beforeinterventionistwicethe du­rationof the current limitationat power-on.

Theoptimalvalueofthe oscillatorfrequency,taking
tolerancesintoaccount,mustbeslightlyhigherthan
the frequencyat whichlampflicker isnoticable(min
60Hz).

The switching times are a compromise between
possibleEMI andswitchingpower losses.The rec­ommendedvaluefor Cs is47pF.

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L9610C - L9611C

DIP16 PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.77 1.65 0.030 0.065
b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335
e 2.54 0.100

e3 17.78 0.700

F 7.1 0.280

I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050

mm inch

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L9610C - L9611C

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.069

a1 0.1 0.25 0.004 0.009
a2 1.6 0.063

b 0.35 0.46 0.014 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.020

c1 45 (typ.)

D 9.8 10 0.386 0.394
E 5.8 6.2 0.228 0.244
e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050

M 0.62 0.024

S 8 (max.)

mm inch

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L9610C - L9611C

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica­tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre­viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics- All Rights Reserved

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