TRIPLE HIGH-SIDE MOSFET DRIVER
OVERVOLTAGE CHARGE PUMP SHUT OFF
FOR V
REVERSE BAT TER Y PR OTEC TI ON ( REFER RING TO THE APPLICATION CIRCUIT DIAGRAM)
PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2
OPEN GROUND PROTECTION FUNCTION
FOR CHANNEL 1 AND 2
CONSTANT GATE CHARGE/DISCHARGE
CURRENT
> 25V
VS
L9380
DESCRIPTION
The L9380 device is a controller for three external
N-channel power MOS transistors in "High-Side
Switch" configuration. It is intended for relays replacement in automotive electric control units.
PIN CONNECTION (Top view)
T1
VS
N.C.
T2
PR
IN3
IN2
2
3
4
5
6
7
ORDERING NUMBER:
20
19
18
17
16
15
14
CP1
D1
N.C.
D2
G1
S1
S2
SO20
L9380
April 1998
IN1
EN G2
GND G3
8
9
10
13
12
11
D98AT391
N.C.
1/12
L9380
BLOCK DIAGRAM
VS
IN1
IN2
IN3
CHARGE PUMP
OVERVOLTAGE
VSI
T1
VSI
DRI VER 1
VSI
T2
VSI
DRI VER 2
VSI
DRI VER 3
≥1
ENN
≥1
ENN
ENN
-
+
CP
≥1
-
+
CP
≥1
CP
≥1
IPR
IPR
CP
GND
D1
S1
G1
D2
S2
G2
G3
EN
ENN
VS VSI
REG.
2V
I
REFERENCE
PR
PR
D98AT390
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
S
V
S
/dt Supply Voltage slope -10 to +10 V/µs
V
∆
S
V
IN,EN
V
T
V
D, G, S
V
D, G, S
I
D, G, S
T
j
T
stg
Note: ESD for all pins, except the timer pins, are according to MIL 883C, tested at 2KV, corresponds to a maximum energy dissipation of 0.2mJ.
The timer pins are tested with 800V
2/12
DC Supply Voltage -0.3 to +27 V
Supply Voltage pulse (t ≤ 400ms) 45 V
Input / Enable Voltage -0.3 to +7 V
Timer Voltage -0.3 to 27 V
Drain, gate, source voltage -15 to +27 V
Drain, gate, source voltage pulse (t ≤ 400ms) 45 V
Drain, gate, source current (t ≤ 2ms) 0 to +4 mA
Operating Junction Temperature -40 to 150 °C
Storage Temperature -65 to 150 °C
THERMAL DATA
Symbol Parameter Value Unit
R
th j-amb
Thermal Resistance Junction to Ambient 100 °C/W
LIFETIME
Symbol Parameter Condition Value Unit
t
B
t
b
Useful life time VS = 0V 20 years
Operating life time VS = 7 to 18.5V 5000 hours
PIN FUNCTIONS
N. Name Function
1 T1 Timer capacitor; the capacitor defines the time for the channel 1 shut down, after overload of
2V
4 T2 Timer capacitor; the capacitor defines the time for the channel 2 shut down, after overload of
5 PR Programming resistor for overload detetcion threshold; the resistor from this pin to ground
6 IN3 Input 3; equal to IN1.
7 IN2 Input 2; equal to IN1.
8 IN1 Input 1; logic signal applied to this pin controls the driver 1; this pin features a current source to
9 EN Enable logic signal high on this pin enables all channels
10 GND Ground
11 G3 Gate 3 driver output; current source from CP or ground
12 G2 Gate 2 driver output; current source from CP or ground
14 S2 Source 2 sense input; monitors the source voltage.
15 S1 Source 1 sense input; monitors the source voltage.
16 G1 Gate 1 driver output; current source from CP or ground
17 D2 Drain 2 sense input; a programmable input bias current defines the drop across the external
19 D1 Drain 1 sense input; a programmable input bias current defines the drop across the external
20 CP Charge pump capacitor; a alternating current source at this pin charges the connected
3, 13, 18 NC Not connected
the external MOS transistor has been detected.
Supply Voltage.
S
the external MOS transistor has been detected.
defines the drain pin current and the charging of the timer capacitor.
assure defined high status when the pin is open.
resistor RD1; this drop fixes the overload threshold of the external MOS.
resistor R
capacitor C
; this drop fixes the overload threshold of the external MOS.
D1
to a voltage 10V higher than VS; the charge stored in this capacitor is thanused
CP
to charge all the three gates of the power MOS transistors.
L9380
3/12
L9380
ELECTRICAL CHARACTERISTICS (7V ≤ V
≤ 18.5V; -40°C ≤ TJ ≤ 150°C, unless otherwise specified.)
S
Symbol Parameter Test Condition Min. Typ. Max. Unit
SUPPLY
I
VS
Static Operating Supply Current VS = 14V 2.5 mA
CHARGE PUMP
V
CP
t
CP
V
SCP off
V
SCP hys
f
CP
Charge Pump Voltage Above V
S
817V
Charging Time VCP = VS + 8V CCP = 100pF 200
Overvoltage Shut down 20 30 V
Overvoltage Shut down
Hysteresis
1)
Charge Pump frequency
1)
50 200 1000 mV
100 250 400 KHz
s
µ
GATE DRIVERS
I
GSo
I
GSi
Gate Source Current VG = V
S
-5 -3 -1 mA
Gate Sink Current VG ≥ 0.8V 1 3 5 mA
DRAIN - SOURCE SENSING
V
PR
Bias Current Programming
10µA ≤ IPR ≤ 100µA; VD ≥ 4V 1.8 2 2.2 V
voltage
I
D Leak
I
I
Smax
V
HYST
D
Drain pin leakage current VS = 0V; VD =14V 0 5
Drain pin bias current VS ≥ VD + 1V; VD ≥ 5V 0.9 I
PR
1.1 I
Source pin input current VS ≥ VD + 1V; VD ≥ 7V 10 60
µ
PR
µ
Comparator Hysteresis 20 mV
A
A
TIMER
V
THi
V
TLo
I
T
Timer threshold high 4 4.4 4.8 V
Timer threshold low 0.3 0.4 0.5 V
Timer Current IN = 5V; VT = 2V
IN = 0V; V
V
≥ 5V; VT = 2V
D
< VD;
S
0.4 I
-0.6 I
PR
PR
0.6 I
-0.4 I
PR
PR
INPUTS
V
LOW
V
HIGH
V
INhys
I
IN
I
EN
t
d
NOTE: Not measured guaranteed by design
Input Enable low voltage -0.3 1 V
Input Enable high voltage 3 7 V
Input Enable Hysteresis
Input source current VIN ≤ 3V -30 -5
Enable sink current VEN ≥ 1V 5 30
(1)
50 200 500 mV
µ
µ
Transfer time IN/ENABLE VS = 14V VG = VS; OPEN GATE 2.5
A
A
s
µ
Function is given for supply voltage down to 5.5V. Function means: The channels are controlled from the
inputs, some other parameters may exceed the limit. In this case the programming voltage and timer
threshold will be lower. This leads to a lower protection threshold and time.
FUNCTIONAL DESCRIPTION
The Triple High-Side Power-MOS Driver features
all necessary control and protection functions to
switch on three Power-MOS transistors operating
as High-Side switches in automotive electronic
control units. The key application field is relays replacement in systems where high current loads,
usually motors with nominal currents of about 40A
connected to ground, has to be switched.
A high signal at the EN pin enables all three
channels. With enable low gates are clamped to
ground. In this c ondition the gate sink current is
higher than the specified 3mA. An enable low sig-
4/12
nal makes also a reset of the timer.
A low signal at the inputs switch on the gates of
the external MOS. A short circuit at the input
leads to permanent activation of the concerned
channel. In this case the device can be disabled
with the enable pin. The charge pump loading is
not influenced due to the enable input.
An external N-channel MOS driver in high side
configuration needs a gate driving voltage higher
than V
. It is generated by means of a charge
S
pump with integrated charge transfer capacitors
and one external charge storage capacitor C
CP
The charge pump is dimensioned to load a ca-
.