SGS Thomson Microelectronics L9348-DIE1, L9348 Datasheet

■

SUPPLY VOLTAGE RANG E: 4. 8 TO 18V

■

OUTPUT VOLTAGE UP TO 40V

■

OUTPUT VOLTAGE CLAMP DURING
RECIRCULATION OF INDUCTIVE LOADS

■

OUTPUT CURRENT CAPABIL ITY 2 X 5A AND
2 X 3A

■

LOW POWER DISSIPATION DURING
RECIRCULATION OF INDUCTIVE LOADS BY
INTEGRATED FREE WHEELING DIODES
(3A-DRIVER S ONLY)

■

LOW ON-RESISTANCE 2 X 0.2Ω , 2 X 0.35Ω (TYP.)

■

OUTPUT SHORT CIRCUIT CURRENT
PROTECTION

■

REAL TIME DIAGNOSTIC FUNCTIONS

■

OVERTEMPERATURE SHUTDOWN

■

SIGNAL- AND POWER-GROUND-LOSS
SHUTDOWN

L9348

QUAD LOW SIDE DRIVER

PowerSO-36 BARE DIE

ORDERING NUMB ERS :

L9348 L9348-DIE1

■

3.3V CMOS COMPATIBLE INPUTS AND
STATUS

DESCRIPTION

The L9348 is a monolithic integrated quad low side
driver realized in advanced Multipower-BCD technol­ogy. It is intended to drive inductive loads (relays,
electromagnetic valves) in automotive and industrial
applications.

Figure 1. Block Diagram

V

S

IN1

ST1

IN2

ST2

ENA

IN3

ST3

IN4

ST4

99AT0073

March 2002

VS

C 166kHz

V

DD

V

REG

Diagnostic

PWRES

C 166kHz EN

PWRES

EN

C 166kHz

V

DD

V

REG

Diagnostic

PWRES

C 166kHz EN

PWRES

GND

Voltage Regulator

+
–

=

V

S

≥

1

PWRES C 166kHz

V

S

≥

1

TSD

TSD

V

CC

EN

OL

SCP

GL

V

DD

PWRES

EN

OL

SCP

GL

FB

V

DD

FAIL

FAIL

VREG

Q1

EN

PGND1

5A - DRIVER

CHANNEL1

CHANNEL2

V

S

EN

CHANNEL3

CHANNEL4

Q2
PGND2

D3
Q3

PGND3

D4
Q4
PGND4

3A - DRIVER

1/13

L9348

Figure 2. Pin Connection

N.C.

PGND3

Q3
D3
Q1
Q2
D4
Q4

PGND4

N.C.

99AT0074

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18

Table 1. Pin Description

N° Pin Function

1, 18,

19, 36

2, 3 PGND3 Power Ground Channel 3
4, 5 Q3 Power Output Channel 3 (3A switch)
6, 7 D3 Recircula tion Diode Chan nel 3

8, 9 Q1 Power Output Channel 1 (5A switch)
10, 11 Q2 Power Output Channel 2 (5A switch)
12, 13 D4 Recircula tion Diode Chan nel 4
14, 15 Q4 Power Output Channel 4 (3A switch)
16, 17 PGND4 Power Ground Channel 4

20 ST4 Status Output Channel 4
21 IN2 Control Input Channel 2
22 IN4 Control Input Channel 4
23 ST2 Status Output Channel 2
24 ENA Enable

25, 26 PGND2 Power Ground Channel 2

27 GND Signal Ground
28 VS Supply Voltage
29 N.C. Not Connected

30, 31 PGND1 Power Output Channel 3

32 ST1 Status Output Channel 1
33 IN3 Control Input Channel 3
34 IN1 Control Input Channel 1

N.C. (GND)

36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19

N.C.
ST3
IN1
IN3
ST1

PGND1

N.C.
VS
GND

PGND2

ENA
ST2
IN4
IN2
ST4
N.C.

2/13

Table 2. Thermal Data

Symbol Parameter Test Conditions

T

Junction temperature -40 150 °C

j

L9348

Values

Unit

Min. Typ. Max.

T

T

R

th j-case

Junction temperature during

jc

clamping (life time)
Storage temperature -55 150 °C

stg

t = 30min

Σ

t = 15min

Σ

Thermal resistance junction to

175
190

2 °C/W

°C
°C

case

Table 3. Absolute Maximum Ratings

The absolute maximum ratings are the limiting values for this device. Damage may occur if this device is
subjected to conditions which are beyond these values

Symbol Parameter Test Conditions Value Unit

Voltages

V

S

V

, V

Q

D

, V

V

IN

EN

V

ST

V

DRmax

Currents

I

Q 1/2

I

Q 3/4

I

ST

E

Q1/2

I

FDmax

ESD Protection

Supply and Signal pins versus GND ±2kV
Output pins (Q

Supply voltage range -0.3 to 40 V
max. static Output voltage 40 V
Input voltage range

|II | < 10mA -1.5 to 6 V

(IN1 to IN4, EN)
Status output voltage range |II | < 1mA -0.3 to 6 V
max. Reverse breakdown

= 100 µA

I

R

voltage free wheeling diodes
D3, D4

Output current at reversal
supply for Q1, Q2

Output current at reversal
supply for Q3, Q4

Status output current range -1 to 1 mA
max. Discharging energy for

inductive loads per channel
Q1, Q2

max. load current free

= 25°C 50 mJ

T

j

T

= 150°C 30 mJ

j

t < 5ms 3 A

wheeling diodes

, DX) versus common ground (=short of

X

.

55 V

-4 A

-2 A

±4kV

SGND with all PGND)

Note: Human Body Model according to MIL883C. The device withstands ST1 class level.

Table 4. Operating Range

.

Symbol Parameter Test Conditions

V

S

T

Supply voltage 4.8 18 V
Junction temperature -40 150 °C

j

Values

Min. Typ. Max.

Unit

3/13

L9348

Table 5. Electrical Characteristcs

The electrical characteristics are valid within the operating range

Symbol Parameter Test Condition Min. Typ. Max. Unit

Power Supply

I

Supply current V

S

I

Quiescent current (outputs OFF) V

Q

IN1...IN4, ENA

= L 6 mA

ENA

= H 8 mA

(Table 4)

, unless otherwise specified

I

D3/4

Quiescent current at pins D3/4

Diagnostic Functions

V

QU1 to 4

Output open load voltage
threshold

I

QU1 to 4

Output open load current
threshold

I

QO1/2

I

QO3/4

Overload current threshold Q 1, 2
Overload current threshold Q 3, 4

TthOvertemperature shutdown

threshold

V
V

T

thPGL

thSGL

Overtemperature hysteresis 10 °C

hy

Power-GND-loss threshold 1.5 2.5 3.5 V
Signal-GND -loss thresh old 150 330 510 mV

Power Outputs (Q1 to Q4)

R

DSON1/2

Static drain-source ON-resistance
Q1, Q2

≤ 18V;

V

D3/4

V

= L

IN3/4

≥ 6.5V

V

S

VEN = X; VIN = L

≥ 6.5V

V

S

VEN = H; VIN = H

≥ 6.5V

V

S

≥ 6.5V

V

S

2)

= 1A; VS ≥ 9.5V

I

Q

Tj = 25°C

Tj = 125°C

3)

10 400

0.3 0.33 0.36 x V

A

µ

S

50 140 mA

57.59 A
358A

175 210 °C

0.2

0.5

Ω

Ω

R

DSON3,4

V

Z

V

C

I

PD

4/13

Static drain-source ON-resistance
Q3, Q4

Z-diode clamping voltage
= threshold of flyback detection
Q3/4

Clamping voltage

Output pull down current V

Tj = 150°C

= 1A; VS ≥ 9.5V

I

Q

T

= 25°C

j

T

= 125°C

j

T

= 150°C

j

≥ 100mA,

I

Q

pos. supply V

≥ 100mA,

I

Q

neg. supply V

ENA

4)

0.35 Ω

3)

4)

45 60 V

D3/4

410V

D3/4

= H, VIN = L 10 20 50

0.5

0.75 Ω

0.75 Ω

µ

Ω

A