L6727 is a single-phase step-down controller with
integrated high-current drivers that provides
complete control logic, protections and reference
voltage to realize in an easy and simple way
general DC-DC converters by using a compact
SO-8 package.
Device flexibility allows managing conversions
with power input V
supply voltage in the range of 5V to 12V.
L6727 provides simple control loop with voltagemode error-amplifier. The integrated 0.8V
reference allows regulating output voltages with
±1% accuracy over line and temperature
variations. Oscillator is internally fixed to 300kHz.
as low as 1.5V and device
IN
■ Subsystem power supply (MCH, IOCH, PCI...)
■ Memory and termination supply
■ CPU & DSP power supply
■ Distributed power supply
■ General DC / DC converters
L6727 provides programmable over current
protection as well as over and under voltage
protection. Current information is monitored
across the Low-Side mosfet R
saving the use
dsON
of expensive and space-consuming sense
resistors while output voltage is monitored
through FB pin.
FB disconnection protection prevents excessive
and dangerous output voltages in case of floating
FB pin.
Typical application circuit and block diagramL6727
1 Typical application circuit and block diagram
1.1 Application circuit
Figure 1.Typical application circuit
VCC = 5V to 12V
VIN = 1.5V to 19V (**)
C
DEC
R
C
C
P
R
OS
R
R
L6727 Reference Schematic
(*) R
OCSET
(**) Up to 12V with Vcc > 5V
1.2 Block diagram
Figure 2.Block diagram
VCC
GND
5
UGATE
PHASE
L6727
3
OCSET
(*)
7
COMP /
DIS / OC
F
F
6
FB
FB
not to be connected when VCC > 5V
VCC
BOOT
LGATE
D
R
D
1
C
BOOT
2
R
8
4
gHS
R
gLS
HS
LS
C
HF
L
R
SN
C
SN
C
BULK
Vout
C
OUT
LOAD
CONTROL LOGIC
& PROTECTIONS
OCSET
I
300 kHz
OSCILLATOR
L6727
ERROR
AMPLIFIER
COMP
/ DIS / OC
4/22
Vout Monitor
DISABLE
+
-
FB
CURRENT READ
& OCP
CROSS CONDUCTION
ADAPTIVE ANTI
PWM
0.8V
HS
VCC
LS
BOOT
UGATE
PHASE
LGATE
GND
L6727Pins description and connection diagrams
2 Pins description and connection diagrams
Figure 3.Pins connection (top view)
BOOT
UGATE
LGATE
2.1 Pin descriptions
Table 2.Pins descriptions
Pin #NameFunction
1BOOT
2UGATEHS Driver Output. Connect to HS mosfet gate.
3GND
4LGATELS Driver Output. Connect to LS mosfet gate.
5VCC
1
2
L6727
GND
HS Driver Supply.
Connect through a capacitor (100nF) to the floating node (LS-Drain) pin
and provide necessary bootstrap diode from VCC.
All internal references, logic and drivers are connected to this pin.
Connect to the PCB ground plane.
Device and LS Driver power supply.
Operative range from 4.1V to 13.2V. Filter with at least 1µF MLCC to GND.
3
4
8
PHASE
7
COMP / DIS / OC
6
FB
5
VCC
Error Amplifier Inverting Input.
6FB
COMP / DIS
7
8PHASE
/ OC
Connect with a resistor R
resistor R
reference.
COMP. Error Amplifier Output. Connect with an R
compensate the control-loop.
DIS. The device can be disabled by forcing this pin lower than 0.5V(typ). To
disable the device, the external pull-down need to overcome 10mA of
COMP output current for about 15µs. Once disabled, COMP output current
drops to 20µA.
OC. Over current threshold set. Connect with an R
(ONLY IF VCC is supplied by 5V bus) to program OC threshold. When
VCC > 5V, R
HS Driver return path, current-reading and adaptive-dead-time monitor.
Connect to the LS drain to sense R
current. This pin is also used by the adaptive-dead-time control circuitry to
monitor when HS mosfet is OFF.
to the output regulated voltage. Additional
to GND may be used to regulate voltages higher than the
OS
OCSET
FB
need to be not-connected.
drop to measure the output
dsON
- CF // CP to FB to
F
resistor to VCC
OCSET
5/22
Electrical specificationsL6727
2.2 Thermal data
Table 3.Thermal data
SymbolParameterValue Unit
R
thJA
T
MAX
T
STG
T
J
1. Measured with the component mounted on a 2S2P board in free air (6.7cm x 6.7cm, 35µm (P) and 17.5µm
(S) copper thickness).
Thermal Resistance Junction to Ambient
Maximum Junction Temperature150°C
Storage Temperature Range-40 to 150°C
Junction Temperature Range-20 to 150°C
(1)
85°C/W
3 Electrical specifications
3.1 Absolute maximum ratings
Table 4.Absolute maximum ratings
SymbolParameter
(1)
Val ueUn it
V
V
BOOT
V
UGATE
CC
to GND-0.3 to 15V
to PHASE
to GND
to PHASE
-0.3 to (V
to PHASE; t < 50ns
to GND
V
PHASE
V
LGATE
to GND-8 to 30V
to GND
to GND; t < 50ns
COMP to GND-0.3 to 7V
FB to GND-0.3 to 3.6V
1. ESD immunity for FB pin is guaranteed up to ±1000V (Human Body Model).
BOOT
V
BOOT
-0.3 to V
15
45
- V
-1
+ 0.3
CC
-1
PHASE)
+ 0.3
V
+ 0.3
V
V
6/22
L6727Electrical specifications
3.2 Electrical characteristics
Table 5.Electrical characteristics
(V
= 12V; TA = -20°C to +85°C, unless otherwise specified).
CC
SymbolParameterTest conditionsMin.Typ.Max.Unit
Recommended operating conditions
V
V
Device supply voltage
CC
Conversion input voltage
IN
Supply current and power-ON
I
CC
I
BOOT
VCC supply currentUGATE and LGATE = OPEN6mA
BOOT supply currentUGATE = OPEN; PHASE to GND0.5mA
VCC turn-ONVCC Rising4.1V
UVLO
Hysteresis0.2V
Oscillator
∆V
d
F
MAX
Main oscillator accuracy
SW
PWM ramp amplitude1.5V
OSC
Maximum duty cycle80%
Reference
Output voltage accuracy
Error amplifier
A
DC gain
0
(1)
GBWPGain-bandwidth product
SRSlew-rate
(1)
See Figure 1
4.113.2V
13.2V
V
< 7.0V 19.0V
CC
0°C to +70°C 270300330kHz
250300350kHz
V
= 0.8V, TA = 0°C to 70°C-1-1%
OUT
= 0.8V-1.51.5%
V
OUT
120dB
(1)
15MHz
8V/µs
I
FB
Input bias currentSourced from FB100nA
DISDisable thresholdCOMP Falling0.430.5V
7/22
Electrical specificationsL6727
Table 5.Electrical characteristics (continued)
(V
= 12V; TA = -20°C to +85°C, unless otherwise specified).
CC
SymbolParameterTest conditionsMin.Typ.Max.Unit
Gate drivers
I
UGATE
R
UGATE
I
LGATE
R
LGATE
HS source currentBOOT - PHASE = 5V to 12V1.5A
HS sink resistanceBOOT - PHASE = 5V to 12V1.1Ω
LS source currentVCC = 5V to 12V1.5A
LS sink resistanceVCC = 5V to 12V0.65Ω
Over-current protection
I
OCSET
V
CC_OC
V
OCTH
OCSET current sourceSunk from COMP pin, before SS556065µA
OC Switch-over thresholdVCC Rising8V
Fixed OC thresholdV
to GND, VCC > V
PHASE
CC_OC
-400mV
Over & under-voltage protections
OVPOVP thresholdFB rising1V
UVPUVP thresholdFB falling0.6V
1. Guaranteed by design, not subject to test.
8/22
L6727Device description
4 Device description
L6727 is a single-phase PWM controller with embedded high-current drivers that provides
complete control logic and protections to realize in an easy and simple way a general DCDC step-down converter. Designed to drive N-channel MOSFETs in a synchronous buck
topology, with its high level of integration this 8-pin device allows reducing cost and size of
the power supply solution.
L6727 is designed to operate from a 5V or 12V supply bus. Thanks to the high precision
0.8V internal reference, the output voltage can be precisely regulated to as low as 0.8V with
±1% accuracy over line and temperature variations (between 0°C and +70°C).
The switching frequency is internally set to 300kHz.
This device provides a simple control loop with a voltage-mode error-amplifier. The erroramplifier features a 15MHz gain-bandwidth product and 8V/µs slew rate, allowing high
regulator bandwidth for fast transient response.
To avoid load damages, L6727 provides over current protection as well as over voltage,
under voltage and feedback disconnection protection. When the device is supplied from 5V,
over current trip threshold is programmable by a simple resistor. Output current is monitored
across Low-Side MOSFET R
resistor. Output voltage and feedback disconnection are monitored through FB pin.
, saving the use of expensive and space-consuming sense
dsON
L6727 implements soft-start increasing the internal reference from 0V to 0.8V in 5.1ms (typ)
in closed loop regulation. Low-Side-Less feature allows the device to perform soft-start over
pre-biased output avoiding high current return through the output inductor and dangerous
negative spike at the load side.
9/22
Driver sectionL6727
5 Driver section
The integrated high-current drivers allow using different types of power MOSFET (also
multiple MOSFETs to reduce the equivalent R
The driver for the high-side MOSFET uses BOOT pin for supply and PHASE pin for return.
The driver for low-side MOSFET uses the VCC pin for supply and GND pin for return.
The controller embodies an anti-shoot-through and adaptive dead-time control to minimize
low side body diode conduction time, maintaining good efficiency while saving the use of
Schottky diode:
●to check high-side MOSFET turn off, PHASE pin is sensed. When the voltage at
PHASE pin drops down, the low-side MOSFET gate drive is suddenly applied;
●to check low-side MOSFET turn off, LGATE pin is sensed. When the voltage at LGATE
has fallen, the high-side MOSFET gate drive is suddenly applied.
If the current flowing in the inductor is negative, voltage on PHASE pin will never drop. To
allow the low-side MOSFET to turn-on even in this case, a watchdog controller is enabled: if
the source of the high-side MOSFET doesn't drop, the low side MOSFET is switched on so
allowing the negative current of the inductor to recirculate. This mechanism allows the
system to regulate even if the current is negative.
), maintaining fast switching transition.
dsON
Power conversion input is flexible: 5V, 12V bus or any bus that allows the conversion (See
maximum duty cycle limitation and recommended operating conditions, in Tab le 5 ) can be
chosen freely.
5.1 Power dissipation
L6727 embeds high current MOSFET drivers for both high side and low side MOSFETs: it is
then important to consider the power that the device is going to dissipate in driving them in
order to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
●Device Bias Power (P
supply pins and it is simply quantifiable as follow (assuming to supply HS and LS
drivers with the same VCC of the device):
●Drivers power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency and total gate charge of
the selected MOSFETs. It can be quantified considering that the total power P
dissipated to switch the MOSFETs (easy calculable) is dissipated by three main
factors: external gate resistance (when present), intrinsic MOSFET resistance and
intrinsic driver resistance. This last term is the important one to be determined to
calculate the device power dissipation. The total power dissipated to switch the
MOSFETs results:
P
SW
F
SW
) depends on the static consumption of the device through the
DC
P
DC
Q
V
CCICCIBOOT
gHS
V
BOOTVPHASE
+()⋅=
–()Q
⋅+⋅[]⋅=
gLSVCC
SW
where V
External gate resistors helps the device to dissipate the switching power since the same
power P
resulting in a general cooling of the device.
10/22
will be shared between the internal driver impedance and the external resistor
SW
BOOT
- V
is the voltage across the bootstrap capacitor.
PHASE
L6727Soft Start and Disable
6 Soft Start and Disable
L6727 implements a soft start to smoothly charge the output filter avoiding high in-rush
currents to be required from the input power supply. The device progressively increases the
internal reference from 0V to 0.8V in about 5.1ms, in closed loop regulation, gradually
charging the output capacitors to the final regulation voltage.
In the event of an over current triggering during soft start, the over current logic will override
the soft start sequence and will shut down both the high side and low side gates for the
internal soft start residual time (up to 2048 clock cycles) plus 2048 clock cycles, then it will
begin a new soft start.
The device begins soft start phase only when VCC power supply is above UVLO threshold
and over current threshold setting phase has been completed.
6.1 Low-Side-Less Start up (LSLess)
In order to manage start up over pre-biased output, L6727 performs a special sequence in
enabling LS driver to switch: during the soft-start phase, LS driver results disabled
(LS = OFF) until HS starts to switch. This avoids the dangerous negative spike on the output
voltage that can happen if starting over a pre-biased output.
If the output voltage is pre-biased to a voltage lower than the programmed one, neither HS
nor LS will turn on until the soft start ramp exceeds the output pre-bias voltage; then V
OUT
will ramp up from there, without any drop or current return.
If the output voltage is pre-biased to a voltage higher than the programmed one, HS would
never start to switch. In this case, at the end of soft start time, LS is enabled and discharges
the output to the final regulation value.
This particular feature of the device masks the LS turn-on only from the control loop point of
view: protections by-pass LSLESS, turning ON the LS mosfet in case of need.
Figure 4.LSLess Startup (left) vs. Non-LSLess Startup (right)
11/22
Soft Start and DisableL6727
6.2 Enable / Disable
The device can be disabled by externally pushing COMP / DIS pin under 0.5V (typ). In
disable condition HS and LS MOSFETs are turned off, and a 20µA current is sourced from
COMP / DIS pin. Setting free the pin, this current pulls it over the threshold and the device
enables again performing a new SS.
To disable the device, the external pull-down needs to overcome 10mA of COMP output
current for about 15µs. Once disabled, COMP output current drops to 20µA.
Figure 5.Start Up sequence; V
= 5V (Left). Over Current Hiccup (Right)
CC
12/22
L6727Over current protection
7 Over current protection
The over current feature protects the converter from a shorted output or overload, by
sensing the output current information across the Low Side MOSFET drain-source onresistance, R
the use of expensive and space-consuming sense resistors.
. This method reduces cost and enhances converter efficiency by avoiding
dsON
The low side R
node when LS MOSFET is turned on with the programmed OCP threshold voltage,
internally held. If the monitored voltage drop (GND to PHASE) exceeds this threshold, an
Over Current Event is detected. If two Over Current Events are detected in two consecutive
switching cycles, the protection will be triggered and the device will turn off both LS and HS
MOSFETs for 2048 clock cycles (plus internal SS remaining time, if triggered during a SS
phase); then it will begin a new Soft Start.
If the over current condition is not removed, the continuous fault will cause L6727 to go into
a hiccup mode with a typical period of 13.6ms (Figure 5), guaranteeing safe load protection
and very low power dissipation.
current sense is implemented by comparing the voltage at the PHASE
dsON
7.1 Over current threshold setting
When supplied with VCC = 5V, L6727 allows to easily program an Over Current Threshold
ranging from 50mV to 500mV, simply by adding a resistor (R
VCC.
During a short period of time (5.5ms - 6.5ms) following the first enable (given VCC over
UVLO threshold), an internal 60µA current (I
voltage drop across R
COMP, divided by a factor 3, will be sampled and internally held by the device as Over
Current Threshold until next VCC cycling. Differential sensing versus VCC allows OCSET
procedure to be fully independent from VIN rail. The OC setting procedure overall time
length ranges from 5.5ms to 6.5ms, proportionally to the threshold being set.
. This voltage drop, differentially sensed between VCC and
OCSET
) between COMP and
OCSET
) is sunk from COMP pin, determining a
OCSET
Connecting an R
be:
R
If the voltage drop across R
inrush current and noise. This can result in a continuous OCP triggering and hiccup mode.
In this case, consider to increase R
In case R
threshold.
If the device is supplied with a VCC higher than 7V, R
case, as soon as VCC rises over V
(internally fixed value).
See Figure 5 for OC threshold setting and soft start oscilloscope sample waveforms.
values range from 2.5kΩ to 25kΩ.
OCSET
OCSET
is not connected (and VCC = 5V), the device will set the maximum
resistor between COMP and VCC, the programmed threshold will
OCSET
I
1
OCSETROCSET
---
------------------------------------------- -
I
OCth
is too low, the system will be very sensitive to start-up
OCSET
OCSET
CC_OC
⋅=
3
value.
(8V typ.), L6727 switches OC threshold to 400mV
13/22
R
⋅
dsON
OCSET
must be not connected. In this
Output voltage monitor and protectionsL6727
8 Output voltage monitor and protections
L6727 monitors the voltage at FB pin and compares it to internal reference voltage in order
to provide Under Voltage and Over Voltage protections.
8.1 Under voltage protection
If the voltage at FB pin drops below UV threshold (0.6V typ), the device turns off both HS
and LS MOSFETs, waits for 2048 clock cycles and then performs a new Soft Start. If under
voltage condition is not removed, the device enters a hiccup mode with a typical period of
13.6ms.
UVP is active from the end of soft start.
8.2 Over voltage protection
If the voltage at FB pin rises over OV threshold (1V typ), over voltage protection turns off HS
MOSFET and turns on LS MOSFET overriding PWM logic as long as over voltage is
detected.
OVP is always active with top priority as soon as over current threshold setting phase has
been completed.
8.3 Feedback disconnection protection
In order to provide load protection even if FB pin is not connected, a 100nA bias current is
always sourced from this pin. If FB pin is not connected, this current will permanently pull up
FB over OVP threshold: thus LS will be latched on preventing output voltage from rising out
of control.
8.4 Under voltage lock out
In order to avoid anomalous behaviors of the device when the supply voltage is too low to
support its internal rails, UVLO is provided: the device will start up when VCC reaches
UVLO upper threshold and will shutdown when VCC drops below UVLO lower threshold.
The 4.1V maximum UVLO upper threshold allows L6727 to be supplied from 5V and 12V
busses in or-ing diode configuration.
14/22
L6727Application details
9 Application details
9.1 Output voltage selection
L6727 is capable to precisely regulate an output voltage as low as 0.8V. In fact, the device
comes with a fixed 0.8V internal reference that guarantees the output regulated voltage to
be within ±1% tolerance over line and temperature variations between 0°C and +70°C
(excluding output resistor divider tolerance, when present).
Output voltage higher than 0.8V can be easily achieved by adding a resistor R
FB pin and ground. Referring to Figure 1, the steady state DC output voltage will be:
V
OUT
where V
REF
is 0.8V.
9.2 Compensation network
The control loop showed in Figure 6 is a voltage mode control loop. The error amplifier is a
voltage mode type. The output voltage is regulated to the internal reference (when present,
offset resistor between FB node and GND can be neglected in control loop calculation).
Error Amplifier output is compared to oscillator saw-tooth waveform to provide PWM signal
to the driver section. PWM signal is then transferred to the switching node with V
amplitude. This waveform is filtered by the output filter.
The converter transfer function is the small signal transfer function between the output of the
EA and V
resonance and a zero at F
modulator is simply the input voltage V
∆V
OSC
The compensation network closes the loop joining V
function ideally equal to -Z
. This function has a double pole at frequency FLC depending on the L-C
OUT
depending on the output capacitor ESR. The DC Gain of the
ESR
.
.
F/ZFB
between
OS
R
V
divided by the peak-to-peak oscillator voltage
IN
⎛⎞
⋅=
REF
⎝⎠
FB
1
---------- -+
R
OS
IN
and EA output with transfer
OUT
OUT
Figure 6.PWM control loop
OSC
∆V
OSC
_
+
PWM
COMPARATO R
ERROR
AMPLIFIER
+
_
R
C
F
F
C
P
15/22
V
IN
LR
C
OUT
ESR
V
REF
R
FB
C
R
S
S
Z
FB
Z
F
V
OUT
Application detailsL6727
Compensation goal is to close the control loop assuring high DC regulation accuracy, good
dynamic performances and stability. To achieve this, the overall loop needs high DC gain,
high bandwidth and good phase margin.
High DC gain is achieved giving an integrator shape to compensation network transfer
function. Loop bandwidth (F
stability, it should not exceed F
) can be fixed choosing the right RF/RFB ratio, however, for
0dB
/2π. To achieve a good phase margin, the control loop gain
SW
has to cross 0dB axis with -20dB/decade slope.
As an example, Figure 7 shows an asymptotic bode plot of a type III compensation.
at FLC and FP2 at half of the switching frequency:
Z2
R
FB
---------------------------=
F
SW
----------------- - 1–
2F⋅
LC
-------------------------------=
⋅⋅
π R
------------------ -
⋅=
1
FFLC
ESR
1
SFSW
V
C
OSC
IN
:
F
ESR
1–⋅⋅⋅
∆V
F
e) Check that compensation network gain is lower than open loop EA gain;
f) Estimate phase margin obtained (it should be greater than 45°) and repeat,
modifying parameters, if necessary.
9.3 Layout guidelines
L6727 provides control functions and high current integrated drivers to implement highcurrent step-down DC-DC converters. In this kind of application, a good layout is very
important.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (EMI and losses) power connections (highlighted in
Figure 8) must be part of a power plane and anyway realized by wide and thick copper
traces: loop must be anyway minimized. The critical components, i.e. the power MOSFETs,
must be close one to the other. The use of multi-layer printed circuit board is recommended.
The input capacitance (C
placed close to the power section in order to eliminate the stray inductance generated by the
copper traces. Low ESR and ESL capacitors are preferred, MLCC are suggested to be
connected near the HS drain.
Use proper VIAs number when power traces have to move between different planes on the
PCB in order to reduce both parasitic resistance and inductance. Moreover, reproducing the
), or at least a portion of the total capacitance needed, has to be
IN
17/22
Application detailsL6727
same high-current trace on more than one PCB layer will reduce the parasitic resistance
associated to that connection.
Connect output bulk capacitors (C
) as near as possible to the load, minimizing parasitic
OUT
inductance and resistance associated to the copper trace, also adding extra decoupling
capacitors along the way to the load when this results in being far from the bulk capacitors
bank.
Figure 8.Power connections (heavy lines)
V
IN
UGATE
PHASE
C
IN
L
L6727
C
LGATE
GND
OUT
LOAD
Gate traces and phase trace must be sized according to the driver RMS current delivered to
the power MOSFET. The device robustness allows managing applications with the power
section far from the controller without losing performances. Anyway, when possible, it is
recommended to minimize the distance between controller and power section. See Figure 9
for drivers current paths.
Small signal components and connections to critical nodes of the application, as well as
bypass capacitors for the device supply, are also important. Locate bypass capacitor (VCC
and Bootstrap capacitor) and loop compensation components as close to the device as
practical. For over current programmability, place R
close to the device and avoid
OCSET
leakage current paths on COMP / OC pin, since the internal current source is only 60µA.
Systems that do not use Schottky diode in parallel to the Low-Side MOSFET might show big
negative spikes on the phase pin. This spike must be limited within the absolute maximum
ratings (for example, adding a gate resistor in series to HS MOSFET gate, or a phase
resistor in series to PHASE pin), as well as the positive spike, but has an additional
consequence: it causes the bootstrap capacitor to be over-charged. This extra-charge can
cause, in the worst case condition of maximum input voltage and during particular
transients, that boot-to-phase voltage overcomes the absolute maximum ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor in series to the bootstrap diode (R
Figure 9.Drivers turn-on and turn-off paths
LS DRIVERLS MOSFET
VCC
C
GD
R
GATERINT
LGATE
C
GS
GND
18/22
C
in Figure 1).
D
HS DRIVERHS MOSFET
BOOT
C
GD
R
GATERINT
UGATE
DS
PHASE
R
PHASE
C
GS
C
DS
L6727Application details
9.4 Embedding L6727-based VRs
When embedding the VR into the application, additional care must be taken since the whole
VR is a switching DC/DC regulator and the most common system in which it has to work is a
digital system such as MB or similar. In fact, latest MBs have become faster and more
powerful: high speed data busses are more and more common and switching-induced noise
produced by the VR can affect data integrity if additional layout guidelines are not followed.
Few easy points must be considered mainly when routing traces in which switching high
currents flow (switching high currents cause voltage spikes across the stray inductance of
the traces causing noise that can affect the near traces):
When reproducing high current path on internal layers, keep all layers the same size in order
to avoid "surrounding" effects that increase noise coupling.
Keep safe guard distance between high current switching VR traces and data busses,
especially if high-speed data busses, to minimize noise coupling.
Keep safe guard distance or filter properly when routing bias traces for I/O sub-systems that
must walk near the VR.
Possible causes of noise can be located in the PHASE connections, MOSFETs gate drive
and Input voltage path (from input bulk capacitors and HS drain). Also GND connection
must be considered if not insisting on a power ground plane. These connections must be
carefully kept far away from noise-sensitive data busses.
Since the generated noise is mainly due to the switching activity of the VR, noise emissions
depend on how fast the current switches. To reduce noise emission levels, it is also possible,
in addition to the previous guidelines, to reduce the current slope and thus to increase the
switching times: this will cause, as a consequence of the higher switching time, an increase
in switching losses that must be considered in the thermal design of the system.
19/22
Package mechanical dataL6727
10 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Table 6.SO-8 Mechanical data
Dim.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
A2 1.10 1.65 0.043 0.065
B 0.33 0.51 0.013 0.020
C 0.19 0.25 0.007 0.010
(1)
D
E 3.80 4.00 0.15 0.157
e 1.27 0.050
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
1. D and F does not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm
(.006inch) per side.
MinTypMaxMinTypMax
4.80 5.00 0.189 0.197
mm.inch
Figure 10. Package dimensions
20/22
L6727Revision history
11 Revision history
Table 7.Revision history
DateRevisionChanges
04-Dec-20061Initial release.
28-Feb-20072Updated V
06-Jun-20073
Updated Figure 1: Typical application circuit on page 4,
Ta bl e 3 and Table 4 on page 6
values in Table 5 on page 7
OCTH
21/22
L6727
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