SGS Thomson Microelectronics L6574D, L6574 Datasheet
HIGHVOLTAGERAIL UP TO 600V
dV/dt IMMUNITY ± 50 V/ns IN FULL TEM-
PERATURERANGE
DRIVER CURRENTCAPABILITY:
250mMASOURCE
450mA SINK
SWITCHING TIMES 80/40ns RISE/FALL
WITH 1nF LOAD
CMOSSHUT DOWNINPUT
UNDERVOLTAGELOCKOUT
PREHEATANDFREQUENCYSHIFTING TIMING
SENSE OP AMP FOR CLOSED LOOP CON-
TROL OR PROTECTIONFEATURES
HIGH ACCURACY CURRENT CONTROLLED
OSCILLATOR
INTEGRATEDBOOTSTRAPDIODE
CLAMPINGON V
S
.
SO16,DIP16 PACKAGE
DESCRIPTION
In order to ensure voltage ratings in excess of
600V, the L6574 is manufactured with BCD OFF
LINE technology, which makes it well suited for
lamp ballastapplications.
The device is intended to drive two power MOSFETS, in the classical half bridgetopology, ensuring all the features needed to drive and properly
controla fluorescentbulb.
A dedicated timing section in the L6574 allows
the user set the necessaryparametersfor proper
preheatand ignitionof the lamp.
Also, an OP AMP is available to implement
closed loop control of the lamp current during
normal lamp burning.
An integrated bootstrap section, eliminating the
normally required bootstrap diode and the zener
clamping on Vs, makes the L6574 well suited for
low cost applications where few additional components are needed to build a high performance
ballast.
February 2000
GND
V
REF
Imin
R
ING
VCO
EN1
V
THE
V
THE
EN2
V
S
V
BOOT
OUT
C
BOOT
LOAD
H.V.
LVG
UV
DETECTION
V
S
HVGBOOTSTRAP
DRIVER
HVG
DRIVER
LVG DRIVER
Vthpre
Ifs
C
PRE
V
REF
Imax
R
PRE
Cf
OP AMP
+
-
OPOUT
OPIN-
OPIN+
DEAD
TIME
DRIVING
LOGIC
CONTROL
LOGIC
+
-
Ipre
+
-
+
-
+
-
LEVEL
SHIFTER
D97IN493A
BLOCK DIAGRAM
SO16N DIP16
ORDERING NUMBERS:
L6574D L6574
L6574
CFL/TL BALLAST DRIVER PREHEAT AND DIMMING
1/9
THERMAL DATA
Symbol Parameter DIP16 SO16N Unit
R
th j-amb
Thermal ResistanceJunction to ambient Max. 80 120 °C/W
PINS DESCRIPTION
N. Name Function
1 Cpre Preheat Timing Capacitor
2 Rpre Maximum Oscillation Frequency Setting. Low Impedence Voltage Source. See also Cf
3 Cf Oscillator Frequency Setting(see also Ring, Rpre)
4 Ring Minimum Oscillation FrequencySetting. Low Impedence Voltage Source. See also Cf
5 OPout Sense OP AMP Output. Low Impedence
6 OPin- Sense OP Amp Inverting Input. High Impedence
7 OPin+ Sense OP AMP Non Inverting InputHigh Impedence.
8 EN1 Half Bridge Enable
9 EN2 Half Bridge Enable
10 GND Ground
11 LVG Low Side Driver Output
12 Vs Supply Voltage with Internal Zener Clamp.
13 N.C. Non Connected
14 OUT High Side Driver Reference
15 HVG High Side Driver Output
16 Vboot Bootstrapped Supply Voltage
CPRE
RPRE
CF
RING
OPOUT
OPIN+
OPIN-
1
3
2
4
5
6
7 GND
V
S
LVG
N.C.
OUT
HVG
VBOOT16
15
14
13
12
10
11
D97IN492
EN1 8 EN29
PIN CONNECTION
L6574
2/9
ELECTRICALCHARACTERISTICS(VS= 12V; V
BOOT-VOUT
=12V; T
amb
=25°C)
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
Supply Voltage
V
suvp
12 VsTurn On Threshold 9.5 10.2 10.9 V
V
suvn
VsTurn Off Threshold 7.3 8 8.7 V
V
suvh
Supply Voltage Under Voltage
Hysteresys
2.2 V
V
cl
Supply Voltage Clamping 14.6 15.6 16.6 V
I
su
Start Up Current VS<V
suvn
250 µA
I
q
Quiescent Current,
fout = 60kHz, no load.
Vs > V
supv
2mA
High voltage Section
I
bootleak
16 BOOT pinleakage current V
BOOT
= 580V 5
µ
A
I
outleak
14 OUT pin Leakage Current V
OUT
= 562V 5
µ
A
High/Low Side Drivers
I
hvgso
15 High SideDriver Source Current V
HVG-VOUT
= 0 170 250 mA
I
hvgsi
15 High SideDriver Sink Current V
HVG-VBOOT
= 0 300 450 mA
I
hvgso
11 Low SideDrive Source Current VLVG-GND = 0 170 250 mA
I
lvgsi
11 Low SideDrive Source Current V
LVG-VS
= 0 300 450 mA
t
rise
15,11Low/High Side Output Rise Time C
load
= 1nF 80 120 ns
t
fall
Low/High Side Output Fall Time C
load
= 1nF 50 80 ns
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
S
Supply Current(*) 25 mA
V
LVG
Low SideOutput -0.3 toVs +0.3 V
V
OUT
High SideReference -1 to VBOOT -18 V
V
HVG
High SideOutput -1 to VBOOT V
V
BOOT
Floating Supply Voltage -1 to 618 V
dV
BOOT
/dt V
BOOT
pin Slew rate (repetitive) ±50 V/ns
dV
OUT
/dt OUT pin Slew Rate (repetitive) ±50 V/ns
V
ir
Forced Input Voltage (pins Ring, Rpre) -0.3 to 5 V
V
ic
Forced Input Voltage (pins Cpre, Cf) -0.3 to 5 V
V
EN1,VEN2
Enable Input Voltage -0.3 to 5 V
I
EN1,IEN2
Enable Input Current ±3mA
V
opc
Sense Op Amp Common Mode Range -0.3 to 5 V
V
opd
Sense Op Amp DifferentialMode Range ±5V
V
opo Sense Op Amp Output Voltage (forced) 4.6 V
T
stg,Tj
Storage Temperature -40 to +150 °C
T
amb
Ambient Temperature -40 to +125 °C
(*) The device has an internal Clamping Zener between GND and the Vcc pin, it must not be suppliedby a Low Impedance VoltageSource.
Note: ESD immunity for pins14,15 and 16 is guaranteed up to 900V (Human Body Model)
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
S
Supply Voltage 10 to VCL V
V
OUT
(*) High Side Reference -1 toVBOOT-VCL V
V
BOOT
(*) Floating Supply Voltage 500 V
(*) If the condition Vboot - Vout < 18 is guaranteed, Vout can range from -3 to 580V.
L6574
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