SGS Thomson Microelectronics L6571BD, L6571B, L6571AD, L6571A Datasheet

L6571A



TECHNOLOGY: BCD ”OFF-LINE”
FLOATINGSUPPLY VOLTAGEUPTO600V
GND REFERRED SUPPLY VOLTAGE UP TO

18V
DRIVER CURRENT CAPABILITY:

- SINK CURRENT = 270mA

- SOURCECURRENT=170mA
VERYLOW START UP CURRENT:150µA
VERYLOW OPERATINGCURRENT:<2mA
UNDERVOLTAGELOCKOUT
PROGRAMMABLEOSCILLATOR

FREQUENCY
dV/dtIMMUNITY UP TO ±50V/ns

DESCRIPTION

The device is a high voltage half bridge driver
with built-in oscillator.The frequency of the oscil­lator can be programmed using external resistor

L6571B

HIGH VOLTAGE HALF BRIDGE

DRIVER WITH OSCILLATOR

Minidip SO8

ORDERING NUMBERS:

L6571A L6571AD
L6571B L6571BD

and capacitor.
The output drivers are designed to drive external
n-channel power MOSFET and IGBT. The inter­nal logic assures a minimum dead time to avoid
cross-conductionof thepower devices.

BLOCK DIAGRAM

F

R

F

C

F

C

F

GND

C

VS

REGULATOR

BUFFERR

COMP

COMP

BIAS

S

V

S

LOGIC

R

HV

LEVEL

SHIFTER

H.V.

BOOTV

V

S

LOW

HIGH

SIDE

DRIVER

SIDE

DRIVER

HVG

OUT

LVG

C

BOOT

LOAD

June 2000

D96IN433

1/7

L6571A - L6571B

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

(*)

I

S

V

CF

V

LVG

V

OUT
HVG High Side Switch Gate Output -1 to VBOOT V

V

BOOT Floating Supply Voltage 618 V

V

BOOT/OUT Floating Supply vs OUT Voltage 18 V

V
dV

BOOT

/dt V

dV

OUT

T

stg

T

j

T

amb

(*)

The device has an internal zener clamp between GND andVS(typical 15.6V).

Therefore the circuit should not be driven by a DC low impedance power source.

Note: ESD immunity for pins 6, 7 and 8is guaranteed up to900 V (Human Body Model)

Supply Current 25 mA
Oscillator Resistor Voltage 18 V
Low Side Switch Gate Output 14.6 V
High Side Switch Source Output -1 to V

/dt V

Slew Rate (Repetitive)

BOOT

Slew Rate (Repetitive)

OUT

BOOT

50 V/ns

±

50 V/ns

±

Storage Temperature -40 to 150
Junction Temperature -40 to 150
Ambient Temperature (Operative) -40 to 125 °C

-18 V

C

°

C

°

THERMAL DATA

Symbol Parameter Minidip SO8 Unit

R

th j-amb

Thermal ResistanceJunction-Ambient Max 100 150

RECOMMENDED OPERATINGCONDITIONS

Symbol Parameter Min. Max. Unit

Supply Voltage 10 V

CL

Floating Supply Voltage - 500 V
High Side Switch Source Output -1 V

BOOT-VCL

Oscillation Frequency 200 kHz

V

V

V

S

BOOT

OUT

f

out

PIN CONNECTION

V
RF
C

GND

S

F

1
2
3
4 LVG

7
6
5

BOOT8
HVG
OUT

C/W

°

V

V

2/7

D94IN059

L6571A - L6571B

ELECTRICALCHARACTERISTICS

(V

S

=12V;V

BOOT-VOUT

=12V;Tj =25°C;unlessotherwisespecified.)

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

V

SUVP

V

SUVN

V

SUVH

V

CL

I

SU

I

q

I

BOOTLK

1VSTurn On Threshold 8.3 9 9.7 V

VSTurn Off Threshold 7.3 8 8.7 V
VSHysteresis 0.7 1 1.3 V
VSClamping Voltage IS= 5mA 14.6 15.6 16.6 V
Start Up Current VS<V
Quiescent Current VS>V

8 LeakageCurrent BOOT pinvs

SUVN
SUVP

V

= 580V 5 µA

BOOT

150 250 µA
500 700 µA

GND

I

OUTLK

I

HVG SO

I

HVG SI

I

LVGSO

I

LVGSI

V

RFON

V

RF OFF

V

CFU

V

CFL

t

d

D

C

6 Leakage CurrentOUTpinvs GND V
7 High Side Driver Source Current V

High Side Driver Sink Current V

5 Low Side Driver Source Current V

Low Side Driver Sink Current V

= 562V 5

OUT

= 6V 110 175 mA

HVG

= 6V 190 275 mA

HVG

= 6V 110 175 mA

LVG

= 6V 190 275 mA

LVG

2 RF High LevelOutput Voltage IRF= 1mA VS-0.05 VS-0.2 V

RF Low Level Output Voltage IRF= -1mA 50 200 mV

3 CF Upper Threshold 7.7 7.95 8.2 V

CF Lower Threshold 3.80 4.05 4.3 V
Internal Dead Time L6571A

L6571B

Duty Cycle, Ratio Between

0.85

0.50

1.25

0.72

1.65

0.94

0.45 0.5 0.55
Dead Time + Conduction Time
of High Side and Low Side
Drivers

I

AVE

fout 6 Oscillation Frequency RT = 12k

1 Average Current from Vs No Load, fs = 60KHz 1.2 1.5 mA

57 60 63 kHz

CT = 1nF

µ

µ
µs

A

s

OSCILLATORFREQUENCY

The frequency of the internal oscillator can be
programmedusingexternalresistorand capacitor.
The nominal oscillator frequency can be calcu­lated using the following equation:

Figure 2:

WAVEFORMS

V

S

V

CF

LVG

T1

T

f

OSC

=

2⋅R

1

⋅ C

F

F

⋅

In 2

=

1.3863⋅R

1

⋅

F

where RFand CFare the external resistor and ca­pacitor

V

SUVP

C

D96IN434

C

F

3/7

L6571A - L6571B

Figure 3: TypicalDead Time vs.Temperature

Dependency(L6571A).

Dead time [µsec]

1.7

1.6

1.5

1.4

1.3

1.2

1.1
1

0.9

-50 0 50 100 150
Temperature [C]

Figure 5:

Typicaland Theoretical Oscillator

D96IN378A

Frequencyvs ResistorValue

f (KHz)

150

100

90
80

70

C=1nF

60
50

30

20

56789101520304050

C=330pF

C=560pF

Resistor Value (Kohm)

D96IN380

Theoretical

Figure4:

TypicalFrequency vs Temperature

Dependency

Frequency [KHz]

65
64
63
62
61
60
59
58
57
56
55

-50 -25 0 25 50 75 100 125
Temperature [C]

Figure8:

TypicalRise andFall Times vs. Load

Capacitance

time [nsec]

300

250

Tr

200

150

100

50

0

0123456

C [nF]

For both high andlow side buffers @25°C Tamb

Tf

D96IN379A

D96IN417

Figure 9: QuiescentCurrent vs. Supply Voltage.

D96IN418

4/7

Iq (µA)

4

10

3

10

2

10

10

02468101214VS(V)

L6571A - L6571B

DIM.

D (1) 4.8 5.0 0.189 0.197

F (1) 3.8 4.0 0.15 0.157

(1) D andF do not include moldflash or protrusions. Mold flash or

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020
c1 45° (typ.)

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8°(max.)

potrusions shall not exceed0.15mm (.006inch).

mm inch

OUTLINE AND

MECHANICAL DATA

SO8

5/7

L6571A - L6571B

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

mm inch

OUTLINE AND

MECHANICAL DATA

Minidip

6/7

L6571A - L6571B

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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