SGS Thomson Microelectronics L6385D, L6385 Datasheet

HIGHVOLTAGERAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-

PERATURERANGE
DRIVER CURRENTCAPABILITY:

400 mASOURCE,
650 mASINK

SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD

CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESISANDPULL DOWN

UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPERDRIVING SECTION

INTERNALBOOTSTRAPDIODE
OUTPUTSIN PHASEWITH INPUTS

DESCRIPTION

The L6385 is an high-voltage device, manufac­tured with theBCD”OFF-LINE” technology.It has
a Driver structure that enables to drive inde-

pendent referenced N Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic In­puts are CMOS/TTL compatible for ease of inter­facing with controlling devices.

June 1999



LOGIC

UV

DETECTION

LEVEL

SHIFTER

BOOTSTRAP DRIVER

R
R
S

V

CC

LVG

DRIVER

V

CC

8

7

6

5

4

HIN

LIN

HVG

DRIVER

HVG

H.V.

TO LOAD

OUT

LVG

GND

D97IN514B

Vboot

3

2

1

Cboot

UV

DETECTION

BLOCKDIAGRAM

SO8 Minidip

ORDERING NUMBERS:

L6385D L6385

L6385

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

1/9

THERMAL DATA

Symbol Parameter SO8 Minidip Unit

R

th j-amb

Thermal ResistanceJunction to Ambient 150 100 °C/W

PIN DESCRIPTION

N. Name Type Function

1 LIN I Lower Driver Logic Input
2 HIN I UpperDriver Logic Input
3 Vcc I Low Voltage Power Supply
4 GND Ground
5 LVG (*) O Low Side Driver Output
6 VOUT O Upper Driver Floating Reference
7 HVG (*) O HighSide Driver Output
8 Vboot BootstrapSupply Voltage

(*) The circuit guarantees 0.3V maximum on the pin (@ I

sink

= 10mA). This allows to omit the ”bleeder”resistor connected between the gate

and thesource of the external MOSFET normally used to hold the pin low.

Vcc

HIN

LIN

GND

1

3

2

4LVG

OUT

HVG

Vboot8
7
6
5

D97IN517

PIN CONNECTION

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vout Output Voltage -3 toVboot - 18 V

Vcc Supply Voltage - 0.3 to +18 V

Vboot Floating Supply Voltage - 1 to 618 V

Vhvg Upper Gate Output Voltage - 1 to Vboot V

Vlvg Lower Gate Output Voltage -0.3 toVcc +0.3 V

Vi Logic Input Voltage -0.3 toVcc +0.3 V

dVout/dt Allowed Output Slew Rate 50 V/ns

Ptot Total Power Dissipation (Tj = 85 °C) 750 mW

Tj Junction Temperature 150 °C

Ts Storage Temperature -50 to 150 °C

Note: ESD immunity for pins 6, 7 and 8is guaranteed up to 900V (Human Body Model)

L6385

2/9

RECOMMENDED OPERATINGCONDITIONS

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

Vout 6 Output Voltage Note 1 580 V

Vboot-

Vout

8 Floating Supply Voltage Note 1 17 V

fsw Switching Frequency HVG,LVGloadCL = 1nF 400 kHz

Vcc 2 Supply Voltage 17 V

T

j

Junction Temperature -45 125 °C

Note 1:

If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.

ELECTRICALCHARACTERISTICS
AC Operation(Vcc= 15V;Tj = 25°C)

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

ton 1 vs 7 High/Low SideDriver Turn-On

Propagation Delay

Vout = 0V 110 ns

toff 2 vs 5 High/Low SideDriver Turn-Off

Propagation Delay

Vout = 600V 105 ns

tr 7,5 Rise Time CL = 1000pF 50 ns
tf 7,5 Fall Time CL = 1000pF 30 ns

DC OPERATION(Vcc = 15V; Tj = 25°C)

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

Low Supply Voltage Section

Vcc 3 Supply Voltage 17 V
Vccth1 Vcc UV Turn On Threshold 9.1 9.6 10.1 V
Vccth2 Vcc UV Turn Off Threshold 7.9 8.3 8.8 V
Vcchys Vcc UV Hysteresis 1.3 V

Iqccu Undervoltage Quiescent Supply

Current

Vcc≤9V 150 220

µ

A

Iqcc Quiescent Current Vcc = 15V 250 320 µA

R

dson

Bootstrap Driver on Resistance (*) Vcc ≥ 12.5V 125 Ω

Bootstrapped supply Voltage Section

VBS 8 Bootstrap Supply Voltage 17 V
VBSth1 VBS UV Turn On Threshold 8.5 9.5 10.5 V
VBSth2 VBS UV Turn Off Threshold 7.2 8.2 9.2 V

VBShys VBS UV Hysteresis 1.3 V

IQBS VBS Quiescent Current HVG ON 200

µ

A

ILK High VoltageLeakage Current VS = VB = 600V 10 µA

High/Low Side Driver

Iso 5,7 Source Short Circuit Current VIN = Vih (tp < 10µs) 300 400 mA

Isi Sink Short Circuit Current VIN = Vil (tp < 10µs) 450 650 mA

Logic Inputs

Vil 2,3 Low LevelLogic Threshold Voltage 1.5 V

Vih High LevelLogic Threshold Voltage 3.6 V

Iih High LevelLogic Input Current VIN = 15V 50 70

µ

A

Iil Low Level Logic Input Current VIN = 0V 1

µ

A

(*) R

DSON

is tested in the following way: R

DSON

=

(

V

CC

−

V

CBOOT1

)

−(

V

CC

−

V

CBOOT2

)

I

1

(

V

CC,VCBOOT1

)−

I

2

(

V

CC,VCBOOT2

)

where I

1

is pin 8 current when V

CBOOT=VCBOOT1,I2

when V

CBOOT=VCBOOT2

.

L6385

3/9

HIN

HVG

LVG

LIN

D99IN1053

Figure 1. Input/OutputTiming Diagram

For both high and lowside buffers @25°C Tamb

012345C(nF)

0

50

100

150

200

250

time

(nsec)

Tr

D99IN1054

Tf

Figure 2. TypicalRise and Fall Times vs.

Load Capacitance

0 2 4 6 8 10 12 14 16 VS(V)

10

10

2

10

3

10

4

Iq

(µA)

D99IN1055

Figure 3. QuiescentCurrent vs. Supply

Voltage

BOOTSTRAPDRIVER

A bootstrap circuitryis needed to supply the high
voltage section. This function is normally accom­plished by a high voltage fast recovery diode (fig.
4a). In the L6385 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shownin fig. 4b

An internal charge pump (fig. 4b) provides the
DMOS driving voltage .

The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.

CBOOT selection and charging

:

To choose the proper C

BOOT

value the external

MOS can be seen as an equivalent capacitor.

This capacitor C

EXT

is related to the MOS total

gate charge :

C

EXT

=

Q

gate

V

gate

The ratio between the capacitors C

EXT

andC

BOOT

is proportionalto the cyclical voltage loss .
It hasto be:

C

BOOT

>>>C

EXT

e.g.: if Q

gate

is 30nC and V

gate

is 10V, C

EXT

is

3nF. With C

BOOT

= 100nF the drop would be

300mV.
If HVG has to be supplied for a long time, the

C

BOOT

selectionhas to take into account also the

L6385

4/9

leakage losses.
e.g.: HVG steady state consumptionis lower than

200µA, so if HVG T

ON

is 5ms, C

BOOT

has to

supply 1µCtoC

EXT

. This charge on a 1µFca-

pacitor means a voltagedrop of 1V.

The internal bootstrap driver gives great advan­tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V

OUT

is close to
GND (or lower)and in the meanwhile the LVG is
on. The charging time (T

charge

) of the C

BOOT

is
the time in which both conditions are fulfilled and
it has to be long enough to chargethe capacitor.

The bootstrap driver introduces a voltage drop
due to the DMOS R

DSON

(typical value: 125
Ohm). At low frequency this drop can be ne­glected. Anyway increasing the frequency it
must be takenin to account.

The following equation is useful to compute the

drop on the bootstrap DMOS:

V

drop

= I

chargeRdson

→ V

drop

=

Q

gate

T

charge

R

dson

where Q

gate

is the gate charge of the external

power MOS, R

dson

is the on resistance of the

bootstrap DMOS, and T

charge

is the chargingtime

of the bootstrapcapacitor.
For example: using a power MOS with a total

gate charge of 30nC the drop on the bootstrap
DMOSis about1V, if the T

charge

is 5µs. In fact:

V

drop

=

30nC

5µs

⋅ 125Ω ~ 0.8V

V

drop

has to be taken into account when the volt-

age drop on C

BOOT

is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.

TO LOAD

D99IN1056

H.V.

HVG

ab

LVG

HVG

LVG

C

BOOT

TO LOAD

H.V.

C

BOOT

D

BOOT

V

BOOT

V

S

V

S

V

OUT

V

BOOT

V

OUT

Figure 4. Bootstrap Driver.

-45 -25 0 25 50 75 100 125

0

50

100

150

200

250

Ton(ns)

Tj (°C)

Typ.

@ Vcc = 15V

Figure 5. Turn On Time vs. Temperature

-45 -25 0 25 50 75 100 125

0

50

100

150

200

250

Toff(ns)

Tj (°C)

Typ.

@ Vcc = 15V

Figure 6. Turn Off Time vs. Temperature

L6385

5/9

-45 -25 0 25 50 75 100 125

0

200

400

600

800

1000

current (mA)

Tj (°C)

Typ.

@ Vcc = 15V

Figure 12. Output Sink Currentvs. Tempera-

ture

-45 -25 0 25 50 75 100 125

5

6

7

8

9

10

11

12

13

Vbth1 (V)

Tj (°C)

Typ.

@ Vcc = 15V

Figure 7. V

BOOT

UV Turn On Thresholdvs.

Temperature

-45 -25 0 25 50 75 100 125

6

7

8

9

10

11

12

13

14

Vbth2 (V)

Typ.

@ Vcc = 15V

Figure 8. V

BOOT

UV Turn Off Threshold vs.

Temperature

-45 -25 0 25 50 75 100 125

7

8

9

10

11

12

13

Vccth1(V)

Tj (°C)

Typ.

Figure 9. VccUV Turn On Threshold vs.

Temperature

-45 -25 0 25 50 75 100 125

6

7

8

9

10

11

Vccth2(V)

Tj (°C)

Typ.

Figure 10. Vcc UV Turn Off Threshold vs.

Temperature

-45 -25 0 25 50 75 100 125

0

200

400

600

800

1000

current (mA)

Tj(°C)

Typ.

@ Vcc = 15V

Figure 11. Output Source Current vs. Tem-

perature

L6385

6/9

Minidip

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

OUTLINE AND

MECHANICAL DATA

L6385

7/9

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.069

a1 0.1 0.25 0.004 0.010
a2 1.65

0.065

a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020

c1 45° (typ.)

D (1) 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F (1) 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max.)

(1) D and F do not includemold flash or protrusions. Mold flash or

potrusions shall not exceed 0.15mm (.006inch).

SO8

OUTLINE AND

MECHANICAL DATA

L6385

8/9

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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L6385

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