SGS Thomson Microelectronics L6234PD, L6234 Datasheet

SUPPLYVOLTAGEFROM 7 TO 52V 5A PEAKCURRENT R
0.3TYP.VALUE AT25°C
DSON
CROSSCONDUCTION PROTECTION TTL COMPATIBLEDRIVER OPERATINGFREQUENCYTO 50KHz THERMALSHUTDOWN INTRINSICFAST FREEWHEELINGDIODES INPUT AND ENABLE FUNCTION FOR
EVERYHALF BRIDGE 10V EXTERNAL REFERENCE AVAILABLE
L6234
THREE PHASE MOTOR DRIVER
POWER DIP (16+2+2)
PowerSO20
DESCRIPTION
The L6234 is a triple half bridge to drive a brushlessmotor. It is realized in Multipower BCD technology which combines isolated DMOS power transistors with CMOSand Bipolar circuitson thesame chip. By usingmixed technology ithas been possibleto optimizethelogic circuitry and the power stage to achievethe best possibleperformance. The output DMOS transistors can sustain a very high current due to the fact that the DMOS struc­ture is not affected by the second breakdown ef-
PIN CONNECTION (Topview)
OUT1
IN1
EN1
GND GND
EN3
IN3
OUT3 10 VREF11
1 2 3
V
4
S
5 6
V
7
S
8 9 VCP
D98IN848
19 18 17 16 15 14 13 12
OUT220 IN2 EN2 SENSE1 GND GND SENSE2 VBOOT
ORDERING NUMBERS: L6234 (POWER DIP 16+2+2)
L6234PD (PowerSO20)
fect, the RMS maximum current is practically lim­ited by the dissipation capability of the package. All the logic inputs are TTL, CMOS andµP com­patible. Each channel is controlled by two sepa­ratelogic input. L6234 is availablein 20 pin POWERDIP package (16+2+2)and in PowerSO20.
GND
SENSE1
EN2
IN2 OUT2 OUT1
IN1
EN1
V
GND GND
2 3 4 5 6 7 8 9
S
10
D94IN129A
20 19 18 17 16 15 14 13 12 11
GND1 SENSE2 V
BOOT
V
cp
V
REF
OUT3 IN3 EN3 V
S
March 1998
POWER DIP (16+2+2)
PowerSO20
1/10
L6234
BLOCKDIAGRAM
10nF 1µF
0.22µF
IN1
EN1
IN2
EN2
IN3
EN3
CHARGE
PUMP
THERMAL
PROTECTION
VREFVCP
VBOOT 1N4148
V
=
REF
10V
TH1
TL1
TH2
TL2
TH3
TL3
Vs
7
to 52V
OUT1
OUT2
SENSE1
OUT3
SENSE2
0.1 µF
100µF
2/10
GND
D95IN309A
R
SENSE
THERMALDATA
Symbol Parameter DIP16+2+2 PowerSO20 Unit
R
th j-pin
R
thj-amb1
R
thj-amb2
th j-case
R
Thermal Resistance, Junction toPin Thermal Resistance, Junction toAmbient
(see Thermal Characteristics) Thermal Resistance, Junction to Ambient (see Thermal
Characteristics) Thermal Resistance Junction-case
12
40
50
1.5 °C/W
L6234
C/W
°
C/W
°
C/W
°
THERMALCHARACTERISTICS
R
th j-pins
DIP16+2+2
. The thermal resistance is referred to the thermal path from the dissipating region on the top surface of the silicon chip, to the points along the four central pins of the package, at a distanceof 1.5 mm away from the stand-offs.
R
th j-amb1
If a dissipating surface, thick at least 35 µm, and with a surface similar or bigger than the one shown, is created making use of the printed cir­cuit. Such heatsinking surface is considered on the bottomside of an horizontalPCB (worstcase).
R
th j-amb2
If the power dissipating pins (the four central
Figure1: Printed Heatsink
ones), as well as the others, have a minimum thermal connection with the external world (very thin stripsonly) so that the dissipation takes place throughstill air and throughthe PCB itself.
It is the same situation of point above,without any heatsinking surface created on purpose on the board.
Addition al data on th e PowerDip and th e PowerSO20 package can be foun d i n:
ApplicationNote AN467: Thermal Characteristicsof the PowerDip 20,24Packages Solderedon 1,2,3 oz. Copper PCB
ApplicationNote AN668: A New High Power IC Surface Mount Package: PowerSO20 Power IC Packaging from Insertion to SurfaceMounting.
3/10
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