Datasheet L6220N, L6220 Datasheet (SGS Thomson Microelectronics)

.TWONON INVERTING+TWOINVERTINGIN-

PUTS WITHINHIBIT

.OUTPUTVOLTAGEUP TO 50V

.OUTPUTCURRENT UP TO 1.8A

.VERYLOW SATURATIONVOLTAGE

.TTLCOMPATIBLEINPUTS

.INTEGRALFAST RECIRCULATIONDIODES

DESCRIP TION

TheL6220monolithicquaddarlingtonswitchis de­signedforhighcurrent,highvoltageswitchingappli­cations.Eachofthefour switchesis controlledby a
logicinput and all four are controlledby a common
inhibitinput.AllinputsareTTL-compatiblefor direct
connectiontologic circuits.

Eachswitchconsistsofanopen-collectordarlington
transistorplusafastdiodeforswitchingapplications
with inductive loads. The emitters of the four
switchesarecommoned.Anynumberof inputsand
outputsof thesamedevice may be paralleled.

Two versionsare available: theL6220 mountedin
a Powerdip 12 + 2 + 2 packageand the L6220N
mountedin a 15-leadMultiwattpackage.

L6220

L6220N

QUAD DARLINGTON SWITCHES

Powerdip 12 + 2 + 2

(PlasticPackage)

ORDERING NUMBER : L6220

Multiwatt15

(PlasticPackage)

ORDERING NUMBER : L6220N

PIN CONNECTIO NS (top vie ws)

L6220 (Powerdip) L6220N (Multiwatt-15)

April1993

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L6220 - L6220N

PIN FUNCTIONS (see block diagram)

Name Function

IN 1 Input to Driver 1

IN 2 Input to Driver 2
OUT 1 Output of Driver 1
OUT 2 Output of Driver 2

CLAMP A Diode Clamp to Driver 1 and Driver 2

IN 3 Input to Driver 3

IN 4 Input to Driver 4
OUT 3 Output of Driver 3
OUT 4 Output of Driver 4

CLAMP B Diode Clamp to Driver 3 and Driver 4

INHIBIT Inhibit Input to all Drivers

V

s

GND Common Ground

BLOCK DIAG RAM

Logic Supply Voltage

TRUTH TABLE

Inhibit Input 1, 4 Power Out Inhibit Inputs 2, 3 Power Out

L
L

H

Foreach input : H = High level

L = Low level

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H

L

X

ON
OFF
OFF

L
L

H

L
H
X

ON
OFF
OFF

L6220 - L6220N

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

o

V

s

V

IN,VINH

I

C

I

C

I

C

T

op

T

stg

I

sub

P

tot

THERMAL DATA

Symbol Parameter Powerdip Multiwatt–15 Unit

R

th j-pins

R

th j-case

R

th j-amb

Ouput Voltage 50 V
Logic SupplyVoltage 7 V
Input Voltage, Inhibit Voltage V

s

Continuous Collector Current (for each channel) 1.8 A
Collector Peak Current (repetitive, duty cycle = 10 % ton= 5 ms) 2.5 A
Collector Peak Current (non repetitive, t = 10 µs) 3.2 A
Operating Temperature Range (junction) – 40 to + 150 °C
Storage Temperature Range – 55 to + 150 °C
Output Substrate Current 350 mA
Total Power Dissipation at T

at T
at T
at T

=90oC (Powerdip)

pins

=90oC (Multiwatt)

case

=70oC (Powerdip)

amb

=70oC (Multiwatt)

amb

4.3
20

1

2.3

Thermal Resistance Junction-pins Max. 14 ­Thermal Resistance Junction-case Max. - 3
Thermal Resistance Junction-ambient Max. 80 35

o

C/W

o

C/W

o

C/W

W
W
W
W

ELECTRICAL CHARACTERISTICS

Refer to the testcircuits Fig. 1 to Fig.9 (V

= 5V, T

S

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

S

I

s

V

CE (sus)

I

CEX

V

CE (sat)

V

IN

V

INH

I

L, I

IN

H,

V

IN

V

INH

I

H, I

IN

I

R

V

F

t

d (on)

t

d (off)

∆I

Logic SupplyVoltage 4.5 5.5 V
Logic SupplyCurrent All Outputs ON, IC= 0.7A

All Outputs OFF
Output Sustaining Voltage IC=100mA, V
Output Leakage Current VCE= 50V, V
Collector Emitter Saturation Voltage

(one output on ; all others off.)

Input Low Voltage 0.8 V

L,

Vs= 4.5V, V

V

L

L Input Low Current VIN=VINL, V

INH

Input High Voltage 2.0 V

H

H Input High Current VIN=VINH, V

INH

Clamp Diode Leakage Current VR= 50V, V
Clamp Diode Forward Voltage IF=1A

I

F

Turn on Delay Time Vp= 5V, RL=10Ω 2 µs
Turn off Delay Time Vp= 5V, RL=10Ω 5 µs
Logic SupplyCurrent Variation VIN= 5V, VEN=5V

s

I

out

=25oC unless otherwise specified)

amb

H46 V

H1mA

L

L - 100 µA

H ± 10 µA

H 100 µA

INH=VINH

= 0.6A

I

C

=1A

I

C

= 1.8A

I

C

INH=VINH

IN 1.4=VINH

IN 2.3=VIN

L

INH=VINH

INH=VINH

INH=VINH

= 1.8A

= – 300mA for each Channel

2020mA

1

1.2

1.6

1.6

2.0VV

120 mA

MA

V

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L6220 - L6220N

TEST CIRCUITS

(X) = Referred to Multiwatt package

X = Referredto Powerdippackage

Figure 1 : Lo gic Supply Current.

SetV1= 4.5V, V2= 0.8V, V

=2V, V2= 0.8V, V

SetV

1

=4.5VorV1= 0.8V,V2= 4.5V,V

INH

= 0.8V for IS(alloutputs on).

INH

=0.8 for IS(all outputs off).

INH

Figure 2 : Ou tput S ustaining Voltage. Figure 3 : Out put Leaka ge Current.

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L6220 - L6220N

Figure 4 : Co llector-emit ter Sat u ra tion Figure 5 : Logic Input Characteristics.

Set S1,S2open, VIN,V

1,S2
1,S2
1,S2

open,VIN,V
close,VIN,V
close,VIN,V

Set S
Set S
Set S

= 0.8V for IINL,I

INH

= 2V for IINH, I

INH

= 0.8V for VINL,V

INH

=2V for VINH,V

INH

INH

INH

INH

H

INH

L

L

H.

Figure 6 : Clamp Diode Leakage Cu rrent. Figur e 7 : Clamp Diode Forward Vo ltage.

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L6220 - L6220N

Figure 8 : S witching Times Te st Circ uit . Figure 9 : Switchi ng Times Wav eforms.

Figure 10 : Collector SaturationVoltageversus

Collector Current

Figure11 : Free-wheeling Diode ForwardVoltage

versusDiodeCurrent

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L6220 - L6220N

Figure 12 : Collector SaturationVoltageversus

JunctionTemperatureat IC = 1A

Figure 14 : Collector SaturationVoltageversus

JunctionTemperatureat IC = 1.8A

Figure13 : Free-wheelingDiodeForwardVoltage

versusJunctionTemperature
at If =1A

Figure15 : Free-wheelingDiodeForwardVolt-

age versusJunctionTemperature

= 1.8A

at I

F

Figure 16.

Figure 1 7 : Unipolar Stepper Moto r Driver.

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L6220 - L6220N

APPLICATION INFORMATION

When inductive loads are driven by L6220/N, a
zenerdiodeinserieswiththe integralfree-wheeling
diodesincreasesthe voltage across which energy
stored in the load is discharged and therefore
speedsthe current decay(Fig. 16). For reliability it
is suggested that the zeneris chosenso thatV

<35V.

V

z

Thereasonsfor this aretwofold :

1) The zenervoltage changesin temperature and
current.

p

2) The instantaneouspower mustbe limited to
avoid thereverse secondbreakdown.

Theparticularinternallogicallowsaneasierfullstep
drivingusingonly two input signals.

+

Figure 18 : AllowedPeak Collector-current versus

DutyCycle for 1, 2, 3 or 4 Contempo­raryWorking Outputs(L6220).

MOUNTING INST RUCTIO N

TheR

oftheL6220canbereducedbysolder-

thj-amb

ing the GND pins to a suitablecopper area of the
printed circuit board (Fig. 20) or to an external
heatsink(Fig.21).

The diagram of figure 22 shows the maximum dis­sipablepowerP

and the R

tot

asa functionof

th j-amb

theside ” α” oftwo equalsquare copperareashav-

Figure19 : AllowedPeak CollectorCur-rent ver-

sus Duty Cyclefor 1, 2, 3 or 4 Con­temporaryWorking Outputs
(L6220N).

ing a thicknessof 35µ (1.4 mils). Duringsoldering
the pinstemperaturemust not exceed 260 °C and
the solderingtime must not be longerthan 12 sec­onds.

Theexternalheatsinkor printed circuit copperarea
must be connectedto electrical ground.

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L6220 - L6220N

Figure 20 : Exampleof P.C. Board Copperarea

whichis used as Heatsink

Figure 22 : Maximum DissipablePowerand Junc-

tion to AmbientThermal Resistance
versusSide”α”

Figure21 : ExternalHeatsinkMounting Example

Figure23 : MaximumAllowablePowerDissipa-

tionversusAmbient Temperature

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L6220 - L6220N

MULTIWATT15 PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 5 0.197

B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022

F 0.66 0.75 0.026 0.030
G 1.14 1.27 1.4 0.045 0.050 0.055

G1 17.57 17.78 17.91 0.692 0.700 0.705
H1 19.6 0.772
H2 20.2 0.795

L 22.1 22.6 0.870 0.890

L1 22 22.5 0.866 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.2 4.3 4.6 0.165 0.169 0.181

M1 4.5 5.08 5.3 0.177 0.200 0.209

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

mm inch

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POWERDIP16 PACKAGE MECHANICAL DATA

L6220 - L6220N

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 20.0 0.787

E 8.80 0.346

e 2.54 0.100

e3 17.78 0.700

F 7.10 0.280

I 5.10 0.201

L 3.30 0.130

mm inch

Z 1.27 0.050

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L6220 - L6220N

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica­tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre­viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems withoutexpress written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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