SGS Thomson Microelectronics L6210 Datasheet
DUALSCHOTTKYDIODE BRIDGE
.MONOLITHIC ARRAY OF EIGHT SCHOTTKY
DIODES
.HIGHEFFICIENCY
.4APEAK CURRENT
.LOWFORWARDVOLTAGE
.FASTRECOVERYTIME
.TWOSEPARATED DIODEBRIDGES
DESCRIP TION
TheL6210isa monolithicICcontainingeightSchottky diodes arranged as two separated diode
bridges.
Thisdiodes connectionmakes this deviceversatile
in manyapplications.
Theyareusedparticularinbipolarsteppermotorapplications,wherehighefficientoperation,duetolow
forwardvoltagedropandfastreverserecoverytime,
arerequired.
TheL6210 is availablein a 16 PinPowerdipPackage(12+ 2 +2) designedforthe0to 70xCambient
temperaturerange.
L6210
N
DIP16
(PlasticPackage))
ORDERINGNUMBER : L6210
PIN CONNECTION (top view)
April1993
1/5
L6210
BLOCK DI AG RAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Repetitive Forward Current Peak 2 A
I
f
V
T
amb
T
Peak Reverse Voltage (per diode) 50 V
r
Operating Ambient Temperature 70
Storage Temperature Range –55 to +150
stg
o
C
o
C
THERMAL DATA
Symbol Parameter Value Unit
R
th j-case
R
th j-amb
Thermal Impedance Junction-case Max. 14
Thermal Impedance Junction-ambient without External Heatsink Max. 65
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (Tj=25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
Note : At forw ard cur r ents of greater than 1A, a parasit ic current of approx imately 10mA may be col lect ed by adiacent diodes.
Forward Voltage Drop If= 100 mA 0.65 0.8
f
= 500 mA 0.8 1 V
i
f
= 1 A 1 1.2
I
f
Leakage Current VR=40V,T
I
L
=25oC1mA
amb
2/5
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