SGS Thomson Microelectronics L6204D, L6204 Datasheet

L6204

DMOS DUAL FULL BRIDGE DRIVER

ADVANCE DATA

SUPPLYVOLTAGEUP TO 48V

DS(ON)

1.2Ω (25°C)

R
CROSS CONDUCTION PROTECTION
THERMAL SHUTDOWN

0.5A DC CURRENT
TTL/CMOSCOMPATIBLEDRIVER
HIGHEFFICIENCYCHOPPING

DESCRIPTION

The L6204 is a dual full bridge driver for motor
control applications realized in BCD technology
which combines isolated DMOS power transistors
with CMOS and Bipolar circuitson the same chip.
By using mixed technologyit has been possible to
optimizethe logic circuitry and the power stage to
achievethe best possibleperformance.
The logic inputs are TTL/CMOS compatible. Both
channelsare controlled by a separate Enable.
Each bridge has a sense resistor to control the
currenrt level.

BLOCK DIAGRAM

MULTIPOWERBCD TECHNOLOGY

Powerdip 16+2+2 SO 24+2+2

ORDERING NUMBERS:

L6204 L6204D

The L6204 is mounted in an 20-lead Powerdip
and SO 24+2+2 packages and the four center
pins are used to conduct heat to the PCB. At nor­mal operating temperatures no external heatsink
isrequired.

March 1994

This isadvanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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L6204

PIN CONNECTIONS (Topview)

POWERDIP

PIN FUNCTIONS

SO

DIP

Pin

Pin

(*)

1

1

2

2

3

3

4

6

5

7

6

8

7

9

8

12

9

13

10

14

11

15

12

16

13

17

14

20

15

21

16

22

17

23

18

26

19

27

20

28

(*) For SOpackage the pins 4, 5, 10, 11, 18, 19, 24 and 25 arenot connected.

ABSOLUTE MAXIMUM RATINGS

Symbols Functions

SENSE 1

IN1

ENABLE 1

OUT 1

GND
GND

OUT 3

ENABLE 2

IN 3

SENSE 2

BOOSTRAP OSC. VCP

IN 4

OUT 4

V

2

S

GND
GND

V

1

S

OUT 2

IN 2

VBOOT

Sense resistorto providethe feedback for motor current control of the bridge A
Digital input from the motor controller (bridge A)
A logic level low on this pin disable the bridge A
Output ofone half bridge of the bridge A
Common Power Ground
Common Power Ground
Ouput of one half bridge of the bridge B
A logic level low on this pin disable the bridge B
Digital input from the motor controller (bridge B)
Sense resistorto providethe feedback for motor current control of the bridge B
Oscillator output for the external charge pump
Digital input from the motor controller (bridge B)
Output ofone half bridge of the bridge B
Supply voltage bridge B
Common Power Ground
Common Power Ground
Supply Voltage bridge A
Output ofone half bridge of the bridge A
Digital input from the motor controller (bridge A)
Overvoltage input for driving of the upper DMOS

SO24+2+2

Symbol Parameter Test Conditions Unit

V

V

IN,VEN

V

SENSE

V

BOOT

P

T

stg,Tj

Supply Voltage 50 V

S

Input or Enable Voltage Range -0.3 to +7 V
Pulsed Output Current 3 A

I

o

Sensing Voltage -1 to 4 V
Bootstrap Supply 60 V
Total power dissipation: (T

tot

Total power dissipation: (T
Total power dissipation: (T

=80°C)

pins

=70°C no copper area on PCB)

amb

=70°C 8cm2copperarea on PCB)

amb

5

1.23
2

Storage and Junction Temperature -40 to 150 °C

2/10

W
W
W

THERMAL DATA

Symbol Description SO DIP Unit

R

th j-pins

R

th j-amb

Thermal Resistance Junction-pins
Thermal Resistance Junction-ambient

Max
Max

16
73

14
65

ELECTRICALCHARACTERISTICS (VS= 42V, Tj=25°C unless otherwisespecified)

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

I

f
T
T

Supply Voltage 12 48 V

S

Total Quiescent Current EN1=EN2=H;IN1=IN2=IN3=IN4=L

S

EN1 = EN2 = L

Commutation Frequency 20 KHz

C

Thermal Shutdown 150 °C

J

Dead Time Protection 500 ns

d

10
10

TRANSISTORS

L6204

°C/W
°C/W

mA
mA

I
R

DSS

Leakage Current OFF 1 mA
On Resistance ON 1.2 Ω

DS

LOGICLEVELS

V

INL,VENL

V

INH,VENH

I

INL,IENL

I

INH,IENH

Input Low Voltage -0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current IN1=IN2=IN3=IN4=EN1 =EN2=L -10 µA
Input High Current IN1=IN2 =IN3=IN4=EN1=EN2=H 50 µA

APPLICATION DIAGRAM

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L6204

CIRCUITDESCRIPTION

L6204 is a dual full bridge IC designed to drive
DC motors, stepper motors and other inductive
loads. Each bridge has 4 power DMOS transistor
with R

= 1.2Ω and the relative protection and

DSon

controlcircuitry. (see fig. 3)
The4 half bridges can be controlled independently
by means of the 4 inputsIN!, IN2, IN3, IN4 and 2
enableinputsENABLE1 andENABLE2.
Externalconnections are provided so that sensing
resistors can be added for constant current chop­perapplications.

LOGICDRIVE (*)

INPUTS

IN1
IN3

EN1=EN2=H

EN1=EN2=L X X All transistor turned

L =Low H = High X =Don’t care
(*) True table for the two full bridges

L

L
H
H

OUTPUT MOSFETS

IN2
IN4

Sink 1, Sink 2

L

Sink 1, Source 2

H

Source 1, Sink 2

L

Source 1, Source 2

H

OFF

CROSSCONDUCTION
Although the device guarantees the absence of

cross-conduction,the presence of the intrinsic di­odes in the POWER DMOS structure causes the
generationof current spikes on the sensing termi­nals. This is due to charge-dischargephenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 1). When the output
switches from high to low, a current spike is gen­erated associated with the capacitor C1. On the
low-to-hightransition a spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(see fig. 2).

Figure1: IntrinsicStructures in the POWER

MOS Transistors

Figure 2:Current Typical SpikesontheSensing Pin

TRANSISTOR OPERATION

ON STATE
Whenone of the POWERDMOS transistorsis ON

it can be consideredas a resistor R

DS(ON)

=1.2Ω at
ajunctiontemperatureof25°C.
Inthiscondition thedissipated poweris given by :

2

⋅ I

DS

The low R

P

DS(ON)

ON=RDS(ON)

of the Multipower-BCD process
can provide high currents with low power dissipa­tion.

OFFSTATE
When one of the POWER DMOS transistor is

OFF the V
age and only the leakage current I

voltage is equal to the supply volt-

DS

flows. The

DSS

powerdissipation during this period is given by :

P

OFF=VS⋅IDSS

TRANSITIONS
Like all MOS power transistors the DMOS

POWER transistors have as intrinsic diode be­tween their source and drain that can operate as
a fast freewheelingdiode in switched mode appli­cations. During recirculation with the ENABLE in­put high, the voltage drop across the transistor is
R

DS(ON)

.

IDand when the voltage reaches the di­ode voltage it is clamped to its characteristic.
When the ENABLE input is low, the POWER
MOS is OFF and the diode carries all of the recir­culationcurrent. The powerdissipated in the tran­sitional times in the cycle depends upon the volt­age and currentwaveforms in the application.

P

trans.=IDS

(t)⋅ VDS(t)

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BOOTSTRAP CAPACITORS
To ensure the correct driving of high side drivers

Figure3a: Two Phase Chopping

L6204

IN1 = H
IN2 = L
EN1 = H

Figure3b: One PhaseChopping

IN1 = H
IN2 = L
EN1 = H

IN1 = L
IN2 = H
EN1 = H

IN1 = H
IN2 = H
EN1 = H

Figure3c: EnableChopping

IN1 = H
IN2 = L
EN1 = H

IN1 = X
IN2 = X
EN1 = L

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L6204

a voltage higher than VSis supplied on pin 20

). This bootstrap voltage is not needed for

(V

boot

the lower power DMOS transistor because their
sources are grounded. To produce this voltage a
charge pump method is used and mAde by two
external capacitors and two diodes. It can supply
the 4 driving blocksof the high side drivers. Using
an external capacitor the turn-on speed of the
high side driver is very high; furthermore with dif­ferent capacitance values it is possible to adapt
the device to different switching frequencies. It is
also possible to operate two or more L6204s us­ing only 2 diodes and 2 capacitance for all the
ICs; all the Vboot pins are connected to the C

store

capacitance while the pin 11 (VCP) of just one
L6204 is connect to C
L6204 ICs have to be connected to the same V

, obviously all the

pump

S

(see fig. 4)

Figure4

the voltage created across the sense resistor is
usuallymuch less thanthe peak value, although a
smallRC filtercan be added if necessary.

POWERDISSIPATION(each bridge)
In order to achieve the high performance provided

by the L6204 some attention must be paid to en­sure that it has an adequate PCB area to dissi­pate the heat. The first stage of any thermal de­sign is to calculate the dissipated power in the
application, for this example the half step opera­tionshown in figure 5 is considered.

RISE TIMET
When an arm of the half bridge is turned on cur-

.

rent begins to flow in the inductive load until the
maximum current I
Thedissipated energy E

E

OFF/ON

r

is reached after a time Tr.

L

isin this case :

2

⋅ I

⋅ Tr] ⋅ 2/3

L

=[R

OFF/ON

DS(ON)

Figure5

DEAD TIME
To protect the device against simultaneous con-

duction in both arms of the bridge and the result­ing rail-to-rail short, the logic circuits provide a
dead time.

THERMAL PROTECTION
A thermal protection circuit has been included

that will disable the device if the junction tempera­ture reaches 150 °C. When the temperature has
fallen to a safe level the device restarts under the
controlof theinput and enable signals.

APPLICATION INFORMATION

RECIRCULATION
During recirculation with the ENABLE input high,

the voltage drop across the transistor is R
I

for voltagesless than 0.7 V and is clamped at a

L

DS(ON)

voltage depending on the characteristics of the
source-drain diode for greater voltages. Although
the device is protected against cross conduction,
current spikes can appear on the current sense
pin due to charge/dischargephenomena in the in­trinsic source drain capacitances. In the applica­tion this does not cause any problems because

ON TIME T

ON

During this time the energy dissipated is due to
the ON resistance of the transistors E
commutationE
transistorsare ON E

E

. As two of the POWER DMOS

COM

ON=IL

isgiven by :

ON

2

⋅R

DS(ON)

⋅ 2 ⋅ T

ON

In the commutation the energy dissipatedis :

E

COM=VS

⋅IL ⋅ T

COM

⋅ f

SWITCH

Where:
T

= CommutationTime and itis assumedthat;

COM

T

COM=TTURN-ON=TTURN-OFF

f

.

FALL TIME T

SWITCH

= Chopperfrequency

f

=100 ns

For this example it is assumed that the energy
dissipatedin this part of the cycle takes the same
formas that shown for the risetime :

E

ON/OFF

=[R

DS(ON)

2

⋅ I

⋅ Tf] ⋅ 2/3

L

ON

⋅ T

and the

ON

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L6204

QUIESCENTENERGY
The last contribution to the energy dissipation is

due to the quiescent supply current and is given
by :

E

QUIESCENT=IQUIESCENT•VS

•T

TOTALENERGYPER CYCLE

E

=(E

TOT

OFF/ON+EON+ECOM+EON/OFF)bridge 1

+(E

OFF/ON+EON+ECOM+EON/OFF)bridge2

+E

QUIESCENT

+

+

TheTotal Power Dissipation P

P

DIS=ETOT

T

=Rise time

r

=ON time

T

ON

T

= Fall Time

f

T

=Dead time

d

T = Period

T=T

r+TON+Tf+Td

is simply :

DIS

/T

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L6204

POWERDIP-20 PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055
b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 24.80 0.976
E 8.80 0.346
e 2.54 0.100

e3 22.86 0.900

F 7.10 0.280

I 5.10 0.201
L 3.30 0.130
Z 1.27 0.050

mm inch

8/10

SO28PACKAGE MECHANICAL DATA

L6204

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.1 0.3 0.004 0.012

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.013

C 0.5 0.020

c1 45° (typ.)

D 17.7 18.1 0.697 0.713
E 10 10.65 0.394 0.419
e 1.27 0.050

e3 16.51 0.65

F 7.4 7.6 0.291 0.299
L 0.4 1.27 0.016 0.050
S8°(max.)

mm inch

9/10

L6204

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men­tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex­press written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All RightsReserved

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