SGS Thomson Microelectronics L6202, L6201PS, L6201, L6203 Datasheet

L6201

L6202 - L6203

DMOS FULL BRIDGE DRIVER

SUPPLYVOLTAGEUP TO 48V
5AMAXPEAKCURRENT (2A max.forL6201)
TOTALRMS CURRENT UP TO

L6201: 1A;L6202:1.5A; L6203/L6201PS:4A
R

DS (ON)

0.3 Ω (typicalvalue at 25 °C)
CROSSCONDUCTION PROTECTION
TTL COMPATIBLEDRIVE
OPERATINGFREQUENCYUP TO 100 KHz
THERMALSHUTDOWN
INTERNALLOGIC SUPPLY
HIGHEFFICIENCY

DESCRIPTION

The I.C. is a full bridgedriver for motor controlap­plications realized in Multipower-BCD technology
which combinesisolated DMOSpower transistors
with CMOS and Bipolar circuits on the same chip.
By using mixed technologyit has beenpossibleto
optimize the logic circuitry and thepower stage to
achieve the best possible performance. The
DMOS output transistors can operate at supply
voltages up to 42V and efficiently at high switch-

ing speeds. All the logic inputs are TTL, CMOS
andµC compatible.Each channel (half-bridge) of
the device is controlledby a separate logic input,
while a common enable controls both channels.
The I.C. is mountedin three different packages.

This is advanced information on a new product now in development or undergoing evaluation. Details are subjectto change without notice.

July 1997

MULTIPOWER BCD TECHNOLOGY

BLOCK DIAGRAM

ORDERING NUMBERS:

L6201 (SO20)

L6201PS

(PowerSO20)

L6202 (Powerdip18)
L6203 (Multiwatt)

SO20 (12+4+4)

Multiwatt11

Powerdip 12+3+3

PowerSO20

1/20

PIN CONNECTIONS (Top view)

SO20

GND

N.C.

N.C.

N.C.

OUT2

OUT1

V

S

BOOT1

IN1

N.C.

GND 10

8
9

7

6

5

4

3

2

13

14

15

16

17

19
18

20

12

1

11

GND

D95IN216

IN2

BOOT2

SENSE
Vref

ENABLE

N.C.

N.C.

GND

PowerSO20

MULTIWATT11

POWERDIP

L6201 - L6202 - L6203

2/20

PINS FUNCTIONS

Device

Name Function

L6201 L6201PS L6202 L6203

1 16 1 10 SENSE A resistor R

sense

connected to this pin provides feedback for

motor current control.

2 17 2 11 ENABLEWhen a logic high is present on this pin the DMOS POWER

transistors are enabled to be selectively driven by IN1 and IN2.

3 2,3,9,12,

18,19

3 N.C. Not Connected

4,5 – 4

6

GND Common Ground Terminal

– 1, 10 5 GND Common Ground Terminal

6,7 – 6 GND Common Ground Terminal

8 – 7 N.C. Not Connected
9481OUT2Ouput of 2nd Half Bridge

10592V

s

Supply Voltage
11 6 10 3 OUT1 Output of first Half Bridge
12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
13 8 12 5 IN1 Digital Input from the Motor Controller

14,15 – 13

6

GND Common Ground Terminal

– 11, 20 14 GND Common Ground Terminal

16,17 – 15 GND Common Ground Terminal

18 13 16 7 IN2 Digital Input from the Motor Controller
19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
20 15 18 9 V

ref

Internal voltage reference. A capacitor from this pin to GND is

recommended. The internal Ref. Voltage can source out a

current of 2mA max.

Symbol Parameter Value Unit

V

s

Power Supply 52 V

V

OD

Differential Output Voltage (between Out1 and Out2) 60 V

V

IN,VEN

Input or Enable Voltage – 0.3 to + 7 V

I

o

Pulsed Output Current for L6201PS/L6202/L6203 (Note 1)
– Non Repetitive (< 1 ms) for L6201

for L6201PS/L6202/L6203

DC Output Current for L6201 (Note 1)

5
5

10

1

A
A
A
A

V

sense

Sensing Voltage – 1 to + 4 V

V

b

Boostrap Peak Voltage 60 V

P

tot

Total Power Dissipation:
T

pins

=90°C for L6201

for L6202

T

case

=90°C for L6201PS/L6203

T

amb

=70°C for L6201(Note 2)

for L6202 (Note 2)
for L6201PS/L6203 (Note 2)

4
5

20

0.9

1.3

2.3

W
W
W
W
W
W

T

stg,Tj

Storage and Junction Temperature – 40 to + 150 °C

Note 1: Pulse width limitedonly by junction temperature and transient thermal impedance (see thermal characteristics)
Note 2:

Mountedon board with minimized dissipating copper area.

ABSOLUTE MAXIMUM RATINGS

L6201 - L6202 - L6203

3/20

THERMAL DATA

Symbol Parameter

Value

Unit

L6201 L6201PS L6202 L6203

Rt

h j-pins

Rt

h j-case

Rt

h j-amb

Thermal Resistance Junction-pins max
Thermal Resistance Junction Case max.
Thermal Resistance Junction-ambient max.

15

–

85

–
–

13 (*)

12

–

60

–
3

35

°C/W

(*) Mounted on aluminiumsubstrate.

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj=25°C, VS= 42V, V

sens

= 0, unless

otherwise specified).

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

s

Supply Voltage 12 36 48 V

V

ref

Reference Voltage I

REF

= 2mA 13.5 V

I

REF

Output Current 2mA

I

s

Quiescent Supply Current EN = H VIN=L

EN = H V

IN

=H

EN = L ( Fig. 1,2,3)

IL=0

10
10

8

15
15
15

mA
mA
mA

f

c

Commutation Frequency(*) 30 100 KHz

T

j

Thermal Shutdown 150

°

C

T

d

Dead Time Protection 100 ns

TRANSISTORS

OFF

I

DSS

Leakage Current Fig. 11 Vs=52V 1 mA

ON

R

DS

On Resistance Fig. 4,5 0.3 0.55 Ω

V

DS(ON)

Drain Source Voltage Fig. 9

I

DS

=1A

I

DS

= 1.2A

I

DS

=3A

L6201
L6202

L6201PS/0

3

0.3

0.36

0.9

V
V
V

V

sens

Sensing Voltage – 1 4 V

SOURCEDRAIN DIODE

V

sd

Forward ON Voltage Fig. 6a and b

I

SD

=1A

L6201

EN = L

I

SD

= 1.2A L6202 EN = L

I

SD

=3A

L6201PS/03

EN =

L

0.9 (**)

0.9 (**)

1.35(**)

V
V
V

t

rr

Reverse Recovery Time

dif

dt

=25A/µs

I

F

=1A

I

F

= 1.2A

I

F

=3A

L6201
L6202
L6203

300 ns

t

fr

Forward Recovery Time 200 ns

LOGIC LEVELS

V

IN L,VEN L

Input Low Voltage – 0.3 0.8 V

V

IN H,VEN H

Input High Voltage 2 7 V

I

IN L,IEN L

Input Low Current VIN,VEN= L –10

µ

A

I

IN H,IEN H

Input High Current VIN,VEN=H 30 µA

L6201 - L6202 - L6203

4/20

ELECTRICALCHARACTERISTICS (Continued)
LOGIC CONTROL TO POWERDRIVETIMING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

1(Vi

) Source Current Turn-off Delay Fig. 12 300 ns

t

2(Vi

) Source Current Fall Time Fig. 12 200 ns

t

3(Vi

) Source Current Turn-on Delay Fig. 12 400 ns

t

4(Vi

) Source Current Rise Time Fig. 12 200 ns

t

5(Vi

) Sink Current Turn-off Delay Fig. 13 300 ns

t

6(Vi

) Sink Current Fall Time Fig. 13 200 ns

t

7(Vi

) Sink Current Turn-on Delay Fig. 13 400 ns

t

8(Vi

) Sink Current Rise Time Fig. 13 200 ns

(*)Limited by power dissipation
(**) Insynchronous rectification the drain-source voltagedrop VDS is shown in fig.4 (L6202/03); typicalvalue for the L6201is of0.3V.

Figure 1: Typical NormalizedISvs.T

j

Figure 3: Typical NormalizedISvs. V

S

Figure2:

TypicalNormalized QuiescentCurrent

vs. Frequency

Figure4: TypicalR

DS (ON)

vs. VS~V

ref

L6201 - L6202 - L6203

5/20

Figure 5: NormalizedR

DS (ON)

at 25°Cvs. TemperatureTypical Values

Figure6b: TypicalDiode Behaviourin Synchro-

nous Rectification (L6201PS/02/03)

Figure7b:

TypicalPower Dissipation vs I

L

(L6201PS,L6202, L6203))

Figure 6a: TypicalDiodeBehaviour in Synchro-

nous Rectification (L6201)

Figure 7a: TypicalPowerDissipation vs I

L

(L6201)

L6201 - L6202 - L6203

6/20