SGS Thomson Microelectronics L6202, L6201PS, L6201, L6203 Datasheet

L6201

L6202 - L6203

DMOS FULL BRIDGE DRIVER

SUPPLYVOLTAGEUP TO 48V
5AMAXPEAKCURRENT (2A max.forL6201)
TOTALRMS CURRENT UP TO

L6201: 1A;L6202:1.5A; L6203/L6201PS:4A
R

DS (ON)

0.3 Ω (typicalvalue at 25 °C)
CROSSCONDUCTION PROTECTION
TTL COMPATIBLEDRIVE
OPERATINGFREQUENCYUP TO 100 KHz
THERMALSHUTDOWN
INTERNALLOGIC SUPPLY
HIGHEFFICIENCY

DESCRIPTION

The I.C. is a full bridgedriver for motor controlap­plications realized in Multipower-BCD technology
which combinesisolated DMOSpower transistors
with CMOS and Bipolar circuits on the same chip.
By using mixed technologyit has beenpossibleto
optimize the logic circuitry and thepower stage to
achieve the best possible performance. The
DMOS output transistors can operate at supply
voltages up to 42V and efficiently at high switch-

ing speeds. All the logic inputs are TTL, CMOS
andµC compatible.Each channel (half-bridge) of
the device is controlledby a separate logic input,
while a common enable controls both channels.
The I.C. is mountedin three different packages.

This is advanced information on a new product now in development or undergoing evaluation. Details are subjectto change without notice.

July 1997

MULTIPOWER BCD TECHNOLOGY

BLOCK DIAGRAM

ORDERING NUMBERS:

L6201 (SO20)

L6201PS

(PowerSO20)

L6202 (Powerdip18)
L6203 (Multiwatt)

SO20 (12+4+4)

Multiwatt11

Powerdip 12+3+3

PowerSO20

1/20

PIN CONNECTIONS (Top view)

SO20

GND

N.C.

N.C.

N.C.

OUT2

OUT1

V

S

BOOT1

IN1

N.C.

GND 10

8
9

7

6

5

4

3

2

13

14

15

16

17

19
18

20

12

1

11

GND

D95IN216

IN2

BOOT2

SENSE
Vref

ENABLE

N.C.

N.C.

GND

PowerSO20

MULTIWATT11

POWERDIP

L6201 - L6202 - L6203

2/20

PINS FUNCTIONS

Device

Name Function

L6201 L6201PS L6202 L6203

1 16 1 10 SENSE A resistor R

sense

connected to this pin provides feedback for

motor current control.

2 17 2 11 ENABLEWhen a logic high is present on this pin the DMOS POWER

transistors are enabled to be selectively driven by IN1 and IN2.

3 2,3,9,12,

18,19

3 N.C. Not Connected

4,5 – 4

6

GND Common Ground Terminal

– 1, 10 5 GND Common Ground Terminal

6,7 – 6 GND Common Ground Terminal

8 – 7 N.C. Not Connected
9481OUT2Ouput of 2nd Half Bridge

10592V

s

Supply Voltage
11 6 10 3 OUT1 Output of first Half Bridge
12 7 11 4 BOOT1 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
13 8 12 5 IN1 Digital Input from the Motor Controller

14,15 – 13

6

GND Common Ground Terminal

– 11, 20 14 GND Common Ground Terminal

16,17 – 15 GND Common Ground Terminal

18 13 16 7 IN2 Digital Input from the Motor Controller
19 14 17 8 BOOT2 A boostrap capacitor connected to this pin ensures efficient

driving ofthe upper POWER DMOS transistor.
20 15 18 9 V

ref

Internal voltage reference. A capacitor from this pin to GND is

recommended. The internal Ref. Voltage can source out a

current of 2mA max.

Symbol Parameter Value Unit

V

s

Power Supply 52 V

V

OD

Differential Output Voltage (between Out1 and Out2) 60 V

V

IN,VEN

Input or Enable Voltage – 0.3 to + 7 V

I

o

Pulsed Output Current for L6201PS/L6202/L6203 (Note 1)
– Non Repetitive (< 1 ms) for L6201

for L6201PS/L6202/L6203

DC Output Current for L6201 (Note 1)

5
5

10

1

A
A
A
A

V

sense

Sensing Voltage – 1 to + 4 V

V

b

Boostrap Peak Voltage 60 V

P

tot

Total Power Dissipation:
T

pins

=90°C for L6201

for L6202

T

case

=90°C for L6201PS/L6203

T

amb

=70°C for L6201(Note 2)

for L6202 (Note 2)
for L6201PS/L6203 (Note 2)

4
5

20

0.9

1.3

2.3

W
W
W
W
W
W

T

stg,Tj

Storage and Junction Temperature – 40 to + 150 °C

Note 1: Pulse width limitedonly by junction temperature and transient thermal impedance (see thermal characteristics)
Note 2:

Mountedon board with minimized dissipating copper area.

ABSOLUTE MAXIMUM RATINGS

L6201 - L6202 - L6203

3/20

THERMAL DATA

Symbol Parameter

Value

Unit

L6201 L6201PS L6202 L6203

Rt

h j-pins

Rt

h j-case

Rt

h j-amb

Thermal Resistance Junction-pins max
Thermal Resistance Junction Case max.
Thermal Resistance Junction-ambient max.

15

–

85

–
–

13 (*)

12

–

60

–
3

35

°C/W

(*) Mounted on aluminiumsubstrate.

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj=25°C, VS= 42V, V

sens

= 0, unless

otherwise specified).

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

s

Supply Voltage 12 36 48 V

V

ref

Reference Voltage I

REF

= 2mA 13.5 V

I

REF

Output Current 2mA

I

s

Quiescent Supply Current EN = H VIN=L

EN = H V

IN

=H

EN = L ( Fig. 1,2,3)

IL=0

10
10

8

15
15
15

mA
mA
mA

f

c

Commutation Frequency(*) 30 100 KHz

T

j

Thermal Shutdown 150

°

C

T

d

Dead Time Protection 100 ns

TRANSISTORS

OFF

I

DSS

Leakage Current Fig. 11 Vs=52V 1 mA

ON

R

DS

On Resistance Fig. 4,5 0.3 0.55 Ω

V

DS(ON)

Drain Source Voltage Fig. 9

I

DS

=1A

I

DS

= 1.2A

I

DS

=3A

L6201
L6202

L6201PS/0

3

0.3

0.36

0.9

V
V
V

V

sens

Sensing Voltage – 1 4 V

SOURCEDRAIN DIODE

V

sd

Forward ON Voltage Fig. 6a and b

I

SD

=1A

L6201

EN = L

I

SD

= 1.2A L6202 EN = L

I

SD

=3A

L6201PS/03

EN =

L

0.9 (**)

0.9 (**)

1.35(**)

V
V
V

t

rr

Reverse Recovery Time

dif

dt

=25A/µs

I

F

=1A

I

F

= 1.2A

I

F

=3A

L6201
L6202
L6203

300 ns

t

fr

Forward Recovery Time 200 ns

LOGIC LEVELS

V

IN L,VEN L

Input Low Voltage – 0.3 0.8 V

V

IN H,VEN H

Input High Voltage 2 7 V

I

IN L,IEN L

Input Low Current VIN,VEN= L –10

µ

A

I

IN H,IEN H

Input High Current VIN,VEN=H 30 µA

L6201 - L6202 - L6203

4/20

ELECTRICALCHARACTERISTICS (Continued)
LOGIC CONTROL TO POWERDRIVETIMING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

1(Vi

) Source Current Turn-off Delay Fig. 12 300 ns

t

2(Vi

) Source Current Fall Time Fig. 12 200 ns

t

3(Vi

) Source Current Turn-on Delay Fig. 12 400 ns

t

4(Vi

) Source Current Rise Time Fig. 12 200 ns

t

5(Vi

) Sink Current Turn-off Delay Fig. 13 300 ns

t

6(Vi

) Sink Current Fall Time Fig. 13 200 ns

t

7(Vi

) Sink Current Turn-on Delay Fig. 13 400 ns

t

8(Vi

) Sink Current Rise Time Fig. 13 200 ns

(*)Limited by power dissipation
(**) Insynchronous rectification the drain-source voltagedrop VDS is shown in fig.4 (L6202/03); typicalvalue for the L6201is of0.3V.

Figure 1: Typical NormalizedISvs.T

j

Figure 3: Typical NormalizedISvs. V

S

Figure2:

TypicalNormalized QuiescentCurrent

vs. Frequency

Figure4: TypicalR

DS (ON)

vs. VS~V

ref

L6201 - L6202 - L6203

5/20

Figure 5: NormalizedR

DS (ON)

at 25°Cvs. TemperatureTypical Values

Figure6b: TypicalDiode Behaviourin Synchro-

nous Rectification (L6201PS/02/03)

Figure7b:

TypicalPower Dissipation vs I

L

(L6201PS,L6202, L6203))

Figure 6a: TypicalDiodeBehaviour in Synchro-

nous Rectification (L6201)

Figure 7a: TypicalPowerDissipation vs I

L

(L6201)

L6201 - L6202 - L6203

6/20

Figure 8a:

TwoPhase Chopping

Figure 8b:

One Phase Chopping

Figure 8c:

EnableChopping

IN1 = H
IN 2 = H
EN = H

L6201 - L6202 - L6203

7/20

TEST CIRCUITS
Figure 9: SaturationVoltage

Figure 10:

QuiescentCurrent

Figure 11: LeakageCurrent

L6201 - L6202 - L6203

8/20

Figure 12: SourceCurrent Delay Timesvs. InputChopper

Figure 13: SinkCurrent Delay Times vs. InputChopper

42V for L6201PS/02/03

42V for L6201PS/02/03

L6201 - L6202- L6203

9/20

CIRCUIT DESCRIPTION

The L6201/1PS/2/3 is a monolithic full bridge
switching motor driver realized in the new Mul­tipower-BCD technology which allows the integra­tion of multiple, isolated DMOS power transistors
plus mixed CMOS/bipolar control circuits. In this
way it has been possible to make all the control
inputs TTL, CMOS and µC compatible and elimi­nate the necessity of external MOS drive compo­nents. TheLogicDrive is shownin table 1.

Table 1

Inputs

Output Mosfets (*)

V

EN

=H

IN1 IN2

L

L
H
H

L

H

L

H

Sink 1, Sink 2
Sink 1, Source 2
Source 1, Sink 2
Source 1, Source 2

V

EN

= L X X All transistors turned oFF

L = Low H = High X = DON’tcare
(*) Numbers referred to INPUT1 or INPUT2 controlledoutput stages

Although the device guarantees the absence of
cross-conduction,the presenceof the intrinsicdi­odes in the POWER DMOS structure causes the
generation of current spikeson thesensing termi­nals. This is due to charge-dischargephenomena
in the capacitors C1 & C2 associated with the
drain source junctions (fig. 14). When the output
switches from high to low, a current spike is gen­erated associated with the capacitor C1. On the
low-to-high transitiona spike of the same polarity
is generated by C2, preceded by a spike of the
opposite polarity due to the charging of the input
capacity of the lower POWER DMOS transistor
(fig. 15).

TRANSISTOROPERATION

ON State

When one of the POWER DMOS transistoris ON
it can be considered as a resistor R

DS (ON)

throughout the recommendedoperating range. In
this conditionthe dissipatedpower is given by:

P

ON=RDS (ON)

⋅ I

DS

2

(RMS)

The low R

DS (ON)

of the Multipower-BCD process
can provide high currents with low power dissipa­tion.

OFF State

When one of the POWER DMOS transistor is
OFF the V

DS

voltage is equal to the supply volt-

age and only the leakage current I

DSS

flows. The

powerdissipationduring this period is givenby:

P

OFF=VS⋅IDSS

The power dissipationis very low and is negligible
in comparison to that dissipated in the ON
STATE.

Transitions

As already seen above the transistors have an in­trinsic diode between their source and drain that
can operate as a fast freewheeling diode in
switched mode applications. During recirculation
with the ENABLE input high, the voltage drop
across the transistor is R

DS (ON)

⋅ IDand when it
reaches the diode forward voltage it is clamped.
When the ENABLE input is low, the POWER
MOS is OFF and the diodecarriesall of the recir­culation current. The power dissipated in the tran­sitional times in the cycle depends upon the volt­age-current waveforms and in the driving mode.
(see Fig. 7ab and Fig. 8abc).

P

trans.=IDS

(t) ⋅ VDS(t)

Figure 14:

IntrinsicStructuresin the POWER
DMOS Transistors

Figure15: CurrentTypicalSpikes on the Sens-

ing Pin

L6201 - L6202 - L6203

10/20

Boostrap Capacitors

To ensurethat the POWERDMOS transistorsare
driven correctly gate to source voltage of typ. 10
V must be guaranteed for all of the N-channel
DMOS transistors.This is easy to be provided for
the lower POWER DMOS transistors as their
sources are refered to ground but a gate voltage
greater than the supply voltage is necessary to
drive the upper transistors.This is achievedby an
internal charge pump circuit that guarantees cor­rect DC drive in combinationwith the boostrap cir­cuit. For efficient charging the value of the boos­trap capacitor should be greater than the input
capacitance of the power transistor which is
around 1 nF. It is recommended that a capaci­tance of at least 10 nF is used for the bootstrap.If
a smallercapacitor is used there is a risk that the
POWER transistors will not be fully turned on and
they will show a higher RDS (ON). On the other
hand if a elevated value is used it is possible that
a currentspike may be producedin the sense re­sistor.

Reference Voltage

To by-pass the internal Ref. Volt. circuit it is rec­ommendedthat a capacitorbe placed betweenits
pin and ground.A value of 0.22 µF should be suf­ficient for most applications. This pin is also pro­tected against a short circuit to ground: a max.
current of 2mA max.can be sinkedout.

Dead Time

To protect the device against simultaneous con­duction in both arms of the bridge resulting in a
rail to rail short circuit, the integrated logic control
provides a dead time greaterthan 40 ns.

Thermal Protection

A thermal protection circuit has been included
that will disable the deviceif the junction tempera­ture reaches150 °C. When the temperature has
fallen to a safe level the device restarts the input
and enablesignals under control.

APPLICATION INFORMATION
Recirculation

During recirculation with the ENABLE input high,
the voltage drop across the transistor is RDS
(ON)⋅ IL, clamped at a voltage depending on the
characteristics of the source-drain diode. Al­though the device is protected against cross con­duction, current spikes can appear on the current
sense pin due to charge/dischargephenomena in
the intrinsic source drain capacitances. In the ap­plication this does not cause any problem be­cause the voltage spike generated on the sense
resistoris maskedby thecurrentcontrollercircuit.

Rise Time T

r

(See Fig. 16)

When a diagonal of the bridge is turned on cur­rent begins to flow in the inductive load until the
maximum current I

L

is reached after a time Tr.

The dissipated energy E

OFF/ON

is in this case :

E

OFF/ON

=[R

DS (ON)

⋅ I

L

2

⋅ Tr] ⋅ 2/3

Load Time T

LD

(See Fig.16)

During this time the energy dissipated is due to
the ON resistanceof thetransistors(E

LD

) and due

to commutation (E

COM

). As two of the POWER

DMOStransistorsare ON,E

ON

is given by :

E

LD=IL

2

⋅R

DS (ON)

⋅ 2 ⋅ T

LD

In thecommutationthe energy dissipated is :

E

COM=VS

⋅IL

⋅T

COM

⋅ f

SWITCH

⋅ T

LD

Where :
T

COM=TTURN-ON=TTURN-OFF

f

SWITCH

= Chopping frequency.

Fall Time T

f

(SeeFig. 16)

It is assumed that the energy dissipated in this
part of the cycle takes the same form as that
shownfor the rise time :

E

ON/OFF

=[R

DS (ON)

⋅ I

L

2

⋅ Tf] ⋅ 2/3

Figure 16.

L6201 - L6202- L6203

11/20

Quiescent Energy

The last contribution to the energy dissipation is
dueto the quiescentsupplycurrentand is givenby:

E

QUIESCENT=IQUIESCENT

⋅ Vs⋅ T

Total Energy PerCycle

E

TOT=EOFF/ON+ELD+ECOM

+

+E

ON/OFF+EQUIESCENT

The TotalPower Dissipation P

DIS

is simply :

P

DIS=ETOT

/T

T

r

= Rise time

T

LD

= Load drive time

T

f

=Fall time

T

d

= Deadtime
T = Period
T=T

r+TLD+Tf+Td

DC Motor Speed Control

Since theI.C. integratesa full H-Bridge in a single
package it is idealy suited for controlling DC mo­tors. When used for DC motor control it performs
the power stage required for both speed and di­rection control. The device can be combinedwith
a current regulator like the L6506 to implement a
transconductance amplifier for speed control, as
shown in figure 17. In this particular configuration
only half of the L6506 is used and the other half
of the device may be used to control a second

motor.
The L6506 senses the voltage across the sense

resistor R

S

to monitor the motor current: it com­pares the sensed voltage both to control the
speedand duringthe brakeof the motor.

Betweenthe sense resistor and each sense input
of the L6506 a resistor is recommended; if the
connections between the outputs of the L6506
and the inputs of the L6203 need a long path, a
resistor must be added between each input of the
L6203 and ground.

A snubbernetwork made by the series of Rand C
must be foreseen very near to the output pins of
the I.C.; one diode (BYW98) is connected be­tween each poweroutput pinand groundas well.

The following formulas can be used to calculate
the snubber values:

R ≅ V

S/lp

C=lp/(dV/dt)where:
V

S

is the maximum Supply Voltage foreseen on
the application;
I

p

is thepeak of the loadcurrent;
dv/dt is the limited rise time of the outputvoltage
(200V/µsis generallyused).

If the Power Supply Cannot Sink Current, a suit­able large capacitor must be used and connected
near the supply pin of the L6203. Sometimes a
capacitorat pin 17 of the L6506let the application
better work. For motor current up to 2A max., the
L6202 can be used in a similar circuit configura­tion for which a typical Supply Voltage of 24V is
recommended.

Figure 17:

BidirectionalDC MotorControl

L6201 - L6202 - L6203

12/20

BIPOLARSTEPPERMOTORSAPPLICATIONS
Bipolar stepper motors can be driven with one

L6506 or L297, two full bridge BCD drivers and
very few external components. Together these
three chips form a complete microprocessor-to­stepper motor interfaceis realized.

As shown in Fig. 18 and Fig. 19, the controller
connect directly to the two bridge BCD drivers.
External component are minimalized: an R.C. net­work to set the chopper frequency, a resistive di­vider (R1; R2) to establish the comparator refer­ence voltage and a snubber network made by R
and C in series(See DCMotor SpeedControl).

Figure19: Two PhaseBipolar StepperMotor Control Circuit with Chopper CurrentControl and Translator

Figure 18: Two Phase BipolarStepper Motor Control Circuit with Chopper Current Control

L6201
L6201PS
L6202
L6203

L6201
L6201PS
L6202
L6203

L6201
L6201PS
L6202
L6203

L6201
L6201PS
L6202
L6203

L6201 - L6202- L6203

13/20

It could be requested to drive a motor at VSlower
than the minimum recommended one of 12V
(See Electrical Characteristics); in this case, by
accepting a possible small increas in the R

DS (ON)

resistance of the power output transistors at the
lowest Supply Voltage value, may be a good solu­tion the one shownin Fig. 20.

THERMAL CHARACTERISTICS

Thanks to the high efficiency of this device, often
a true heatsink is not needed or it is simply ob­tained by means of a copper side on the P.C.B.
(L6201/2).
Under heavy conditions, the L6203 needs a suit­able cooling.
By using two square copper sidesin a similarway
as it shown in Fig. 23, Fig. 21 indicates how to
choose the on board heatsink area when the
L6201 totalpower dissipationis knownsince:

R

Th j-amb

=(T

j max.–Tamb max

)/P

tot

Figure 22 shows the Transient Thermal Resis­tance vs. a singlepulse time width.
Figure 23 and 24 referto the L6202.
For the Multiwatt L6203 addition information is
given by Figure25 (ThermalResistance Junction­Ambient vs. Total Power Dissipation) and Figure
26 (Peak Transient Thermal Resistance vs. Re­petitive Pulse Width) while Figure 27 refersto the
single pulseTransientThermalResistance.

Figure 20: L6201/1P/2/3Used at a Supply Volt-

age RangeBetween 9 and 18V

Figure21:

TypicalR

Th J-amb

vs. ”OnBoard”

HeatsinkArea (L6201)

Figure22: TypicalTransientR

TH

in SinglePulse

Condition(L6201)

Figurre23:

TypicalR

Th J-amb

vs. Two ”On Board”

SquareHeatsink (L6202)

L6201
L6201PS
L6202
L6203

L6201 - L6202 - L6203

14/20

Figure 24

: TypicalTransient Thermal Resistance

for SinglePulses (L6202)

Figure25: TypicalR

Th J-amb

of Multiwatt

Packagevs. Total PowerDissipation

Figure 26: TypicalTransientThermal Resistance

for SinglePulses with and without
Heatsink(L6203)

Figure27:

TypicalTransientThermal Resistance

versusPulse Width and Duty Cycle
(L6203)

L6201 - L6202- L6203

15/20

POWERDIP18PACKAGE MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055
b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 24.80 0.976
E 8.80 0.346
e 2.54 0.100

e3 20.32 0.800

F 7.10 0.280

I 5.10 0.201
L 3.30 0.130
Z 2.54 0.100

L6201 - L6202 - L6203

16/20

SO20 PACKAGE MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.1 0.3 0.004 0.012
a2 2.45 0.096

b 0.35 0.49 0.014 0.019

b1 0.23 0.32 0.009 0.013

C 0.5 0.020

c1 45 (typ.)

D 12.6 13.0 0.496 0.512
E 10 10.65 0.394 0.419
e 1.27 0.050

e3 11.43 0.450

F 7.4 7.6 0.291 0.299
L 0.5 1.27 0.020 0.050

M 0.75 0.030

S 8 (max.)

L6201 - L6202- L6203

17/20

e

a2

A

E

a1

PSO20MEC

DETAILA

T

D

110

1120

E1

E2

hx45°

DETAILA

lead

slug

a3

S

Gage Plane

0.35

L

DETAILB

R

DETAILB

(COPLANARITY)

GC

-C-

SEATING PLANE

e3

b

c

NN

PowerSO20PACKAGE MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.60 0.1417

a1 0.10 0.30 0.0039 0.0118
a2 3.30 0.1299
a3 0 0.10 0 0.0039

b 0.40 0.53 0.0157 0.0209
c 0.23 0.32 0.009 0.0126

D (1) 15.80 16.00 0.6220 0.6299

E 13.90 14.50 0.5472 0.570
e 1.27 0.050

e3 11.43 0.450

E1 (1) 10.90 11.10 0.4291 0.437

E2 2.90 0.1141

G 0 0.10 0 0.0039

h 1.10
L 0.80 1.10 0.0314 0.0433

N10

°

(max.)

S8

°

(max.)

T 10.0 0.3937

(1) ”D and E1”do not include mold flashor protrusions

- Moldflashor protrusions shall not exceed 0.15mm(0.006”)

L6201 - L6202 - L6203

18/20

MULTIWATT11 PACKAGE MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5 0.197
B 2.65 0.104

C 1.6 0.063
D 1 0.039

E 0.49 0.55 0.019 0.022
F 0.88 0.95 0.035 0.037

G 1.57 1.7 1.83 0.062 0.067 0.072
G1 16.87 17 17.13 0.664 0.669 0.674
H1 19.6 0.772
H2 20.2 0.795

L 21.5 22.3 0.846 0.878
L1 21.4 22.2 0.843 0.874
L2 17.4 18.1 0.685 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.1 4.3 4.5 0.161 0.169 0.177

M1 4.88 5.08 5.3 0.192 0.200 0.209

S 1.9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

L6201 - L6202- L6203

19/20

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights ofthird partieswhich may result from its use. No
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