SGS Thomson Microelectronics L6122 Datasheet
L6122
L6123
100V DMOS SWITCHES
ADVANC E DAT A
. OUTPUTVOLTAGETO 100V
.0,5Ω R
DS (on)
.SUPPLYVOLTAGEUP TO 60V
.LOWINPUTCURRENT
.TTL/CMOSCOMPATIBLEINPUTS
.HIGHSWITCHING FREQUENCY(200kHz)
DESCRIPTION
Realized with the Multipower-BCD mixed bipolar/CMOS/DMOSprocess,theL6122/23monolithic
three DMOS switch is designed for high current,
high voltage switching applications. Each of the
threeswitchesis controlledby a logic inputand all
threeare controlledby a commonenableinput.All
inputsareTTL/CMOScompatiblefordirectconnectionto logiccircuits.Eachsourceis availableforthe
insertionof thesenseresistorsincurrentcontrolapplications.
Two versionsare available: theL6122 mountedin
a Powerdip14 + 3 + 3 packageand the L6123ina
15-leadMultiwatt package.
PIN CONNECTIONS (top view)
MULTIP OWER BCD TECHNOL O GY
Powerdip 14+3+3
(Plastic Package)
ORDERING NUMBER : L6122
MULTIWATT15V
(Plastic Package)
ORDERING NUMBER : L6123
L6122 (POWERDIP) L6123 (MULTI WATT15V)
April1993
Thisis advanced information on a new product nowin development or undergoing evaluation. Details aresubject tochange withoutnotice.
1/9
L6122 - L6123
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
CC
I
D
I
DM
I
SD
I
SDM
V
IN
V
EN
V
S
P
tot
T
stg,Tj
(*)Pulse width≤ 300µs, duty cycle ≤ 10 %.
NOTE : I
Drain-source Voltage 100 V
Supply Voltage 60 V
Continuous Drain Current @ T
@T
=90°C, POWERDIP
pins
=90°C, MULTIWATT
case
(*) Pulsed Drain Current POWERDIP
MULTIWATT
Continuous Source-drain @ T
Diode Current @ T
=90°C, POWERDIP
pins
=90°C, MULTIWATT
case
Pulsed Source Drain Diode Current POWERDIP
MULTIWATT
1.5
3
5
8
1.5
3
5
8
Input Voltage 7 V
Enable Voltage 7 V
Source Voltage – 1 to + 4 V
Total Power Dissipation @ T
@T
@T
@T
=90°C, POWERDIP
pins
=90°C, MULTIWATT
case
=70°C, POWERDIP
amb
=70°C, MULTIWATT
amb
4.3
20
1.3
2.3
Storage and Junction Temperature Range – 40 to + 150 °C
D,IDM,ISD,ISDM
aregiven per channel.
THERMAL DATA
Symbol Parameter POWERDIP14+3+3 MULTIWATT15 Unit
R
th j-pins
R
th j-case
R
th j-amb
Thermal Resistance Junction-pins Max. 14 Thermal Resistance Junction-case Max. - 3
Thermal Resistance Junction-ambient Max. 65 35
o
C/W
o
C/W
o
C/W
A
A
A
A
A
A
A
A
W
W
W
W
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L6122 - L6123
ELECTRICAL CHARACTERISTICS (T
=25oC, VCC= 40V,unless otherwise specified)
j
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
I
CC
I
Q
BV
I
DSS
R
DS(on)
V
INL,VENL
V
INH,VENH
I
INL,IENL
I
INH,IENH
t
d (on)
t
t
d (off)
t
V
SD
V
SD(on)
Supply Voltage 14 48 V
Supply Current All VIN=H
= Square Wave (200kHz, 50% DC)
V
EN
9mA
Quiescent Current VEN=L 2 3 mA
Drain Source Breakdown Voltage ID= 1mA
DSS
=L
V
EN
100 V
Output Leakage Current VEN=L
= 100V
V
DS
= 80V, Tj= 125°C1
V
DS
1
(*) Static Drain-source on Resistance VCC≥ 14V, ID= 1.5A - VEN,VIN= H 0.7 Ω
Input Low Voltage - 0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current VIN,VEN= L - 100 µA
Input High Current VIN,VEN=H 10 µA
Turn on Delay Time
= 1.5A
Rise Time 100 ns
r
Turn off Delay Time 400 ns
Fall Time 100 ns
f
(*) Source Drain Diode Forward
I
D
See Test Circuit and Waveforms
ISD= 1.5A, VEN= L 1.5 V
300 ns
Voltage
(*) Source Drain Forward Voltage ISD= 1.5A - VIN,VEN= H 1.2 V
mA
(*) Pulse test: pulse width= 300 µs, dutycycle = 2 %.
SWITCHING TI MES RE S I STIVE LOAD
Figure 1 : TestCircuit.
3/9
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