Datasheet L6122 Datasheet (SGS Thomson Microelectronics)

L6122
L6123

100V DMOS SWITCHES

ADVANC E DAT A

. OUTPUTVOLTAGETO 100V

.0,5Ω R

DS (on)

.SUPPLYVOLTAGEUP TO 60V

.LOWINPUTCURRENT

.TTL/CMOSCOMPATIBLEINPUTS

.HIGHSWITCHING FREQUENCY(200kHz)

DESCRIPTION

Realized with the Multipower-BCD mixed bipo­lar/CMOS/DMOSprocess,theL6122/23monolithic
three DMOS switch is designed for high current,
high voltage switching applications. Each of the
threeswitchesis controlledby a logic inputand all
threeare controlledby a commonenableinput.All
inputsareTTL/CMOScompatiblefordirectconnec­tionto logiccircuits.Eachsourceis availableforthe
insertionof thesenseresistorsincurrentcontrolap­plications.

Two versionsare available: theL6122 mountedin
a Powerdip14 + 3 + 3 packageand the L6123ina
15-leadMultiwatt package.

PIN CONNECTIONS (top view)

MULTIP OWER BCD TECHNOL O GY

Powerdip 14+3+3

(Plastic Package)

ORDERING NUMBER : L6122

MULTIWATT15V

(Plastic Package)

ORDERING NUMBER : L6123

L6122 (POWERDIP) L6123 (MULTI WATT15V)

April1993

Thisis advanced information on a new product nowin development or undergoing evaluation. Details aresubject tochange withoutnotice.

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L6122 - L6123

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

CC

I

D

I

DM

I

SD

I

SDM

V

IN

V

EN

V

S

P

tot

T

stg,Tj

(*)Pulse width≤ 300µs, duty cycle ≤ 10 %.
NOTE : I

Drain-source Voltage 100 V
Supply Voltage 60 V
Continuous Drain Current @ T

@T

=90°C, POWERDIP

pins

=90°C, MULTIWATT

case

(*) Pulsed Drain Current POWERDIP

MULTIWATT

Continuous Source-drain @ T
Diode Current @ T

=90°C, POWERDIP

pins

=90°C, MULTIWATT

case

Pulsed Source Drain Diode Current POWERDIP

MULTIWATT

1.5
3

5
8

1.5
3

5
8

Input Voltage 7 V
Enable Voltage 7 V
Source Voltage – 1 to + 4 V
Total Power Dissipation @ T

@T
@T
@T

=90°C, POWERDIP

pins

=90°C, MULTIWATT

case

=70°C, POWERDIP

amb

=70°C, MULTIWATT

amb

4.3

20

1.3

2.3

Storage and Junction Temperature Range – 40 to + 150 °C

D,IDM,ISD,ISDM

aregiven per channel.

THERMAL DATA

Symbol Parameter POWERDIP14+3+3 MULTIWATT15 Unit

R

th j-pins

R

th j-case

R

th j-amb

Thermal Resistance Junction-pins Max. 14 ­Thermal Resistance Junction-case Max. - 3
Thermal Resistance Junction-ambient Max. 65 35

o

C/W

o

C/W

o

C/W

A
A

A
A

A
A

A
A

W
W
W
W

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L6122 - L6123

ELECTRICAL CHARACTERISTICS (T

=25oC, VCC= 40V,unless otherwise specified)

j

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CC

I

CC

I

Q

BV

I

DSS

R

DS(on)

V

INL,VENL

V

INH,VENH

I

INL,IENL

I

INH,IENH

t

d (on)

t

t

d (off)

t

V

SD

V

SD(on)

Supply Voltage 14 48 V
Supply Current All VIN=H

= Square Wave (200kHz, 50% DC)

V

EN

9mA

Quiescent Current VEN=L 2 3 mA
Drain Source Breakdown Voltage ID= 1mA

DSS

=L

V

EN

100 V

Output Leakage Current VEN=L

= 100V

V

DS

= 80V, Tj= 125°C1

V

DS

1

(*) Static Drain-source on Resistance VCC≥ 14V, ID= 1.5A - VEN,VIN= H 0.7 Ω

Input Low Voltage - 0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current VIN,VEN= L - 100 µA
Input High Current VIN,VEN=H 10 µA
Turn on Delay Time

= 1.5A

Rise Time 100 ns

r

Turn off Delay Time 400 ns
Fall Time 100 ns

f

(*) Source Drain Diode Forward

I

D

See Test Circuit and Waveforms

ISD= 1.5A, VEN= L 1.5 V

300 ns

Voltage

(*) Source Drain Forward Voltage ISD= 1.5A - VIN,VEN= H 1.2 V

mA

(*) Pulse test: pulse width= 300 µs, dutycycle = 2 %.

SWITCHING TI MES RE S I STIVE LOAD
Figure 1 : TestCircuit.

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L6122 - L6123

Figure 2 : Waveforms.

a) b)

Figure 3 : StaticDrain-source onResistance. Figure 4 :Normalized BreakdownVoltagevs.

Temperature.

Figure 5 : Normalizedon Resistancevs. Tempe-

rature.

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Figure6 : Typical Source-drainDiodeForward

Voltage.

L6122 - L6123

Figure 7 : R

vs.Dissipated Power(Multiwatt).

th j-amb

(*) Rth≈ 9°C/W

Figure 8 : TransientThermalResistancefor SinglePulses(Multiwatt).

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L6122 - L6123

Figure 9 : PeakTransientThermal Resistancevs. PulseWidthand DutyCycle (Multiwatt).

6/9

MULTIWATT15 PACKAGE MECHANICAL DATA

L6122 - L6123

DIM.

A 5 0.197

B 2.65 0.104
C 1.6 0.063
D 1 0.039

E 0.49 0.55 0.019 0.022

F 0.66 0.75 0.026 0.030
G 1.14 1.27 1.4 0.045 0.050 0.055

G1 17.57 17.78 17.91 0.692 0.700 0.705
H1 19.6 0.772
H2 20.2 0.795

L 22.1 22.6 0.870 0.890

L1 22 22.5 0.866 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.2 4.3 4.6 0.165 0.169 0.181

M1 4.5 5.08 5.3 0.177 0.200 0.209

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

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L6122 - L6123

POWERDIP20PACKAGEMECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 24.80 0.976

E 8.80 0.346

e 2.54 0.100

e3 22.86 0.900

F 7.10 0.280

I 5.10 0.201
L 3.30 0.130
Z 1.27 0.050

mm inch

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L6122 - L6123

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica­tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre­viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

MULTIWATT is a Registered Trademark of SGS-THOMSON Microelectronics

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