SGS Thomson Microelectronics L6114, L6115 Datasheet
L6114
L6115
QUAD 100 V, DMOS SWITCH
.OUTPUTVOLTAGETO 100 V
.0.7 ΩR
DS(ON)
.SUPPLYVOLTAGEUP TO 60 V
.LOWINPUT CURRENT
.TTL/CMOSCOMPATIBLEINPUTS
.HIGHSWITCHING FREQUENCY (200 KHz)
DESCRIPTION
Realized with the Multipower-BCD mixed bipolar/CMOS/DMOSprocess,theL6114/15monolithic
quad DMOS switch is designed for high current,
highvoltageswitching applications.Eachofthefour
switchesiscontrolledbyalogicinputand allfourare
controlledby a common enableinput. Allinputsare
TTL/CMOScompatiblefordirectconnectiontologic
circuits.Eachsourceis availablefor theinsertionof
the senseresistorsin current controlapplications.
Two versionsare available: theL6114 mountedin
aPowerdip14+3+3packageandtheL6115in a15leadMultiwattpackage.
MULTIP OWER BCD TE CHNOLOGY
Powerdip 14 + 3 + 3
Multiwatt-15
ORDE R I NG NUMBE RS : L6114 (P ower d ip)
L6115 (Mult iwatt- 15)
PIN CONNECTIONS (top view)
L6114 (Powerdip)
April1993
L6115 (Mul t i w att-15)
1/11
L6114 - L6115
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
I
DM
I
I
SDM
V
V
V
P
T
stg,Tj
(*) Pulse width ≤ 300 µs,dutycycle ≤ 10%.
Note : I
Drain-source Voltage 100 V
DS
Supply Voltage 60 V
CC
Continuous Drain Current @<0>T
I
D
@<0>T
pins
case
=90°C
=90°C
Powerdip
Multiwatt –15
(*) Pulsed Drain Current Powerdip
Multiwatt –15
Continuous Source-drain
SD
Diode Current
@<0>T
@<0>T
pins
case
=90°C
=90°C
Powerdip
Multiwatt –15
Pulsed Source Drain Diode Current Powerdip
Multiwatt –15
Input Voltage 7V
IN
Enable Voltage 7V
EN
Source Voltage – 1 to + 4 V
S
Total Power Dissipation @ T
tot
@T
@T
@T
pins
case
amb
amb
=90°C
=90°C
=70°C
=70°C
Powerdip
Multiwatt –15
Powerdip
Multiwatt –15
1.5
3
5
8
1.5
3
5
8
4.3
20
1.3
2.3
Storage and Junction Temperature Range – 40 to + 150 °C
D,IDM,ISD,ISDM
aregiven per channel.
A
A
A
A
A
A
A
A
W
W
W
W
THERMAL DATA
Symbol Parameter Powerdip Multiwatt–15 Unit
Thermal Resistance Junction-pins Max. 14 Thermal Resistance Junction-case Max. - 3
Thermal Resistance Junction-ambient Max. 65 35
2/11
R
th j-pins
R
th j-case
R
th j-amb
o
C/W
o
C/W
o
C/W
L6114 - L6115
ELECTRICAL CHARACTERISTICS (Tj=25oC, VCC= 40V, unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CC
I
CC
I
Q
BV
DSS
I
DSS
R
DS (on)
V
IN L,VEN L
V
IN H,VEN H
I
IN L,IEN L
I
IN H,IEN H
t
d (on)
t
r
t
d (off)
t
f
V
SD
V
SD (on)
(*) Pulse test : pulse width = 300 µs, dutycycle = 2 %.
Supply Voltage 14 48 V
Supply Current All VIN=H
= Square Wave
V
EN
(200kHz, 50 % DC)
9mA
Quiescent Current VEN=L 2 3 mA
Drain Source Breakdown Voltage ID= 1mA, VEN= L 100 V
Output Leakage Current VEN=L
= 100V
V
DS
= 80V, Tj= 125°C1
V
DS
(*) Static Drain-source on Resistance VCC≥ 14V, ID= 1.5A
EN,VIN
=H
V
0.7 Ω
1
Input Low Voltage – 0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current VIN,VEN= L – 100 µA
Input High Current VIN,VEN=H 10 µA
Turn on Delay Time
= 1.5A
I
Rise Time 100 ns
Turn off Delay Time 400 ns
D
See Test Circuit and
Waveforms
300 ns
Fall Time 100 ns
(*) Source Drain Diode Forward Voltage ISD= 1.5A, VEN= L 1.5 V
(*) Source Drain Forward Voltage ISD= 1.5A - VIN,VEN= H 1.2 V
mA
3/11
L6114 - L6115
SWITCHING TI ME S RE S I STIVE L O AD
Figure 1 : Test Circuit
(Pinsx = Powerdip ; Pins (x) =Multiwatt).
Figure 2 : Waveforms.
b)a)
4/11
Loading...