Datasheet L6114, L6115 Datasheet (SGS Thomson Microelectronics)

L6114
L6115

QUAD 100 V, DMOS SWITCH

.OUTPUTVOLTAGETO 100 V

.0.7 ΩR

DS(ON)

.SUPPLYVOLTAGEUP TO 60 V

.LOWINPUT CURRENT

.TTL/CMOSCOMPATIBLEINPUTS

.HIGHSWITCHING FREQUENCY (200 KHz)

DESCRIPTION

Realized with the Multipower-BCD mixed bipo­lar/CMOS/DMOSprocess,theL6114/15monolithic
quad DMOS switch is designed for high current,
highvoltageswitching applications.Eachofthefour
switchesiscontrolledbyalogicinputand allfourare
controlledby a common enableinput. Allinputsare
TTL/CMOScompatiblefordirectconnectiontologic
circuits.Eachsourceis availablefor theinsertionof
the senseresistorsin current controlapplications.

Two versionsare available: theL6114 mountedin
aPowerdip14+3+3packageandtheL6115in a15­leadMultiwattpackage.

MULTIP OWER BCD TE CHNOLOGY

Powerdip 14 + 3 + 3

Multiwatt-15

ORDE R I NG NUMBE RS : L6114 (P ower d ip)

L6115 (Mult iwatt- 15)

PIN CONNECTIONS (top view)

L6114 (Powerdip)

April1993

L6115 (Mul t i w att-15)

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L6114 - L6115

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V

I

DM

I

I

SDM

V

V

V

P

T

stg,Tj

(*) Pulse width ≤ 300 µs,dutycycle ≤ 10%.
Note : I

Drain-source Voltage 100 V

DS

Supply Voltage 60 V

CC

Continuous Drain Current @<0>T

I

D

@<0>T

pins
case

=90°C

=90°C

Powerdip
Multiwatt –15

(*) Pulsed Drain Current Powerdip

Multiwatt –15

Continuous Source-drain

SD

Diode Current

@<0>T
@<0>T

pins
case

=90°C

=90°C

Powerdip
Multiwatt –15

Pulsed Source Drain Diode Current Powerdip

Multiwatt –15

Input Voltage 7V

IN

Enable Voltage 7V

EN

Source Voltage – 1 to + 4 V

S

Total Power Dissipation @ T

tot

@T
@T
@T

pins
case
amb
amb

=90°C

=90°C
=70°C
=70°C

Powerdip
Multiwatt –15
Powerdip
Multiwatt –15

1.5
3

5
8

1.5
3

5
8

4.3

20

1.3

2.3

Storage and Junction Temperature Range – 40 to + 150 °C

D,IDM,ISD,ISDM

aregiven per channel.

A
A

A
A

A
A

A
A

W
W
W
W

THERMAL DATA

Symbol Parameter Powerdip Multiwatt–15 Unit

Thermal Resistance Junction-pins Max. 14 ­Thermal Resistance Junction-case Max. - 3
Thermal Resistance Junction-ambient Max. 65 35

2/11

R

th j-pins

R

th j-case

R

th j-amb

o

C/W

o

C/W

o

C/W

L6114 - L6115

ELECTRICAL CHARACTERISTICS (Tj=25oC, VCC= 40V, unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

CC

I

CC

I

Q

BV

DSS

I

DSS

R

DS (on)

V

IN L,VEN L

V

IN H,VEN H

I

IN L,IEN L

I

IN H,IEN H

t

d (on)

t

r

t

d (off)

t

f

V

SD

V

SD (on)

(*) Pulse test : pulse width = 300 µs, dutycycle = 2 %.

Supply Voltage 14 48 V
Supply Current All VIN=H

= Square Wave

V

EN

(200kHz, 50 % DC)

9mA

Quiescent Current VEN=L 2 3 mA
Drain Source Breakdown Voltage ID= 1mA, VEN= L 100 V
Output Leakage Current VEN=L

= 100V

V

DS

= 80V, Tj= 125°C1

V

DS

(*) Static Drain-source on Resistance VCC≥ 14V, ID= 1.5A

EN,VIN

=H

V

0.7 Ω

1

Input Low Voltage – 0.3 0.8 V
Input High Voltage 2 7 V
Input Low Current VIN,VEN= L – 100 µA
Input High Current VIN,VEN=H 10 µA
Turn on Delay Time

= 1.5A

I

Rise Time 100 ns
Turn off Delay Time 400 ns

D

See Test Circuit and
Waveforms

300 ns

Fall Time 100 ns

(*) Source Drain Diode Forward Voltage ISD= 1.5A, VEN= L 1.5 V

(*) Source Drain Forward Voltage ISD= 1.5A - VIN,VEN= H 1.2 V

mA

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L6114 - L6115

SWITCHING TI ME S RE S I STIVE L O AD
Figure 1 : Test Circuit

(Pinsx = Powerdip ; Pins (x) =Multiwatt).

Figure 2 : Waveforms.

b)a)

4/11

TEST CIRCUIT (Pins x = Powe rdip ; Pins (x) = Multiwatt)

L6114 - L6115

Figure 3 : QuiescentCurrent and Output

LeakageCurrent..

V

= 0.8 V

EN

Figure4 : SupplyCurrent.

V

=2V

IN

= squarewave{f = 200 KHz

V

EN

DC= 50%

Figure 5 : R

. Figure6 : Source-drainDiodeForward Voltage.

DS (on)

VCC=14V, VIN= 2 V, VEN=2V
I

=square wave, f = 3 KHz DC = 2 %

D

(*)V

is taken during the time in which the

DS

ID=1.5 A RDS=

=2 V, ISDsquarewave, f = 3 KHz DC= 2 %

V

IN

V

1.5

DS

Set VEN=0.8 V for VSD(takenduring the time in which

-

I

= 1.5 A)

SD

Set VEN=2 Vfor V

-

I

= 1.5 A)

SD

(takenduring thetime inwhich

SD (on)

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L6114 - L6115

Figure 7 : Input LogicLevels

Set V= 0.8V S1,S2open for I
Set V= 0.8V S1,S2close for V
Set V= 2 V S1,S2open for I
Set V= 2 V S1,S2close for V

IN L

IN L

IN H

IN H

and I

and V

andI

andV

EN L

EN H

EN H

EN H

Figure 8 : StaticDrain-source on Resistance. Figure9 : Normalized Break-downVoltagevs.

Temperature.

6/11

L6114 - L6115

Figure10 : Normalizedon Resistancevs.

Temperature.

Figure12 : R

vs.Dissipated Power(Multiwatt).

thj-amb

Figure11 : Typical Source-drainDiodeForward

Voltage.

(*) Rth≈ 9 °C/W.

7/11

L6114 - L6115

Figure 13 : TransientThermal Resistancefor SinglePulses(Multiwatt).

Figure 14 : PeakTransientThermalResistancevs.Pulse width and duty cycle(Multiwatt).

8/11

POWERDIP20PACKAGE MECHANICAL DATA

L6114 - L6115

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 0.85 1.40 0.033 0.055

b 0.50 0.020

b1 0.38 0.50 0.015 0.020

D 24.80 0.976
E 8.80 0.346

e 2.54 0.100

e3 22.86 0.900

F 7.10 0.280

I 5.10 0.201

L 3.30 0.130

Z 1.27 0.050

mm inch

9/11

L6114 - L6115

MULTIWATT15 PACKAGEMECHANICAL DATA

DIM.

A 5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.66 0.75 0.026 0.030

G 1.14 1.27 1.4 0.045 0.050 0.055
G1 17.57 17.78 17.91 0.692 0.700 0.705
H1 19.6 0.772
H2 20.2 0.795

L 22.1 22.6 0.870 0.890
L1 22 22.5 0.866 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.75 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.429
L7 2.65 2.9 0.104 0.114

M 4.2 4.3 4.6 0.165 0.169 0.181

M1 4.5 5.08 5.3 0.177 0.200 0.209

S 1.9 2.6 0.075 0.102

S1 1.9 2.6 0.075 0.102

Dia1 3.65 3.85 0.144 0.152

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

10/11

L6114 - L6115

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica­tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre­viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or
systems withoutexpress written approval of SGS-THOMSON Microelectronics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

MULTIWATT is a Registered Trademark of SGS-THOMSON Microelectronics

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