SGS Thomson Microelectronics L3100B1, L3100B Datasheet
L3100B
L3100B1
ApplicationSpecific Discretes
A.S.D.
FEATURES
UNIDIRECTIONALFUNCTION
PROGRAMMABLEBREAKDOWNVOLTAGE
UP TO265 V
PROGRAMMABLECURRENT LIMITATION
FROM50 mA TO550 mA
HIGHSURGECURRENTCAPABILITY
= 100A 10/1000µs
I
PP
DESCRIPTION
Dedicated to sensitive telecom equipment
protection, this device can provide both voltage
protection and current limitation with a very tight
tolerance.
Itshigh surgecurrentcapabilitymakes the L3100B
a reliable protection device for very exposed
equipment,or when seriesresistorsareverylow.
Thebreakdownvoltagecan beeasilyprogrammed
byusing an externalzenerdiode.
A multipleprotection mode canalso be performed
when using several zener diodes, providing each
lineinterface with an optimizedprotectionlevel.
The current limiting function is achieved with the
use of a resistor between the gate N and the
cathode. The value of the resistor will determine
thelevel of thedesired current.
OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
DIL 8
SCHEMATICDIAGRAM
Anode
Gate N Gate P
COMPLIESWITH THEFOLLOWING STANDARDS :
CCITTK17 - K20 10/700 µs 1.5 kV
5/310 µs38A
VDE0433 10/700 µs2 kV
5/200 µs50A
CNET 0.5/700 µs 1.5 kV
0.2/310 µs38A
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
September 1998 Ed: 3A
Cathode
CONNECTION DIAGRAM
Gate N
NC
Gate P
Cathode
1
2
3
4
8
7
6
5
Anode
Anode
Anode
Anode
1/8
L3100B/L3100B1
ABSOLUTE MAXIMUMRATINGS (T
Symbol Parameter Value Unit
amb
=25°C)
I
PP
I
TSM
Peakpulse current(see note 1) 10/1000µs
Nonrepetitivesurge peakon-state
current
T
stg
T
T
L
Note1 :
j
Storage temperaturerange
Maximumoperatingjunctiontemperature
Maximumleadtemperaturefor solderingduring 10s 230 °C
Pulsewaveform10/1000 µs
%I
PP
100
50
0
t
t
rp
THERMAL RESISTANCE
t
100
8/20 µs
250
tp= 10ms 50 A
- 40 to + 150
+ 150
°C
°C
A
Symbol Parameter Value Unit
2/8
R
th (j-a)
Junction-to-ambient 80 °C/W
ELECTRICAL CHARACTERISTI CS(T
Symbol Parameter
amb
L3100B/L3100B1
=25°C)
V
RM
I
RM
V
BR
V
BO
I
H
I
BO
I
PP
V
GN
I
GN,IGP
V
RGN
C
Stand-offvoltage
Reverseleakagecurrent
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current
Gatevoltage
Triggeringgate current
Reversegate voltage
Capacitance
OPERATIONWITHOUT GATE
Type
max. min. max. min. max. min. max.
I
RM
@V
RM
I
I
I
I
VBR@I
pp
BO
H
RM
R
I
V
C
V
BO
V
RM
@I
BO
VBRV
I
BO
H
note1 note 1 note2
A V V mA V mA mA mA pF
µ
L3100B 6
40
L3100B1 6
40
60
250
60
250
265 1 350 200 500 280 100
255 1 350 200 500 210 100
OPERATIONWITH GATES
Type
V
GN@IGN
min. max. min. max. min. max.
= 200 mA IGN@VAC=100V V
@IG= 1mA IGP@VAC= 100V
RGN
V V mA mA V mA
L3100B/B1 0.6 1.8 30 200 0.7 150
Note 1 : See thereference test circuits for IH,IBOand VBOparameters.
Note 2 : VR= 5 V, F = 1MHz.
3/8
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