SGS Thomson Microelectronics KBMF01SC6 Datasheet

®
KBMFxxSC6
A.S.D.
FOR PS/2 MOUSE OR KEYBOARD PORTS
MAIN APPLICATION
EMI Filter and line termination for mouse and key­board ports on:
- Desktop computers
- Notebooks
- Workstations
- Servers
DESCRIPTION
On the implementation of computer systems, theradiatedand conducted EMI should bekept within the required levels as stated by the FCC regulations. In addition to the requirements of EMC compatibility, the computing devices are required to tolerate ESD events and remain operational without user intervention.
TheKBMFimplementsa low pass filter to limit EMI levels and provide ESD protection which exceeds IEC 61000-4-2 level 4 standard. The device also implementsthepull up resistors neededtobias the data and clock lines. The package is the SOT23-6L which is ideal for situations where board space is at a premium.
FEATURES
Integrated low pass filters for Data and Clock lines
Integrated ESD protection
Integrated pull-up resistors
Small package size
Breakdown voltage: VBR=6Vmin
EMI FILTER AND LINE TERMINATION
SOT23-6L
Rs
Dat In
CRpC
Gnd
Rs
Clk In
CRpC
+Vcc
Dat Out
+Vcc
+Vcc
Clk Out
BENEFITS
EMI / RFI noise suppression
ESDprotectionexceeding IEC61000-4-2 level4
High flexibility in the design of high density boards
TM: ASDandTRANSIL are trademarks of STMicroelectronics.
February 2002 - Ed : 1D
Rs Rp C
code 01 39 4.7k 120pF
Tolerance ±10% ±10% ±20%
1/8
KBMFxxSC6
COMPLIES WITH THE FOLLOWING ESD STANDARDS:
IEC 61000-4-2 (R = 330C = 150pF), level 4
±15 kV (air discharge) ±8 kV (contact discharge)
MIL STD 883C, Method 3015-6 Class 3 C = 100 pF R = 1500 3positivestrikes and 3negative strikes (F=1Hz)
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
V
PP
ESD dischargeR=330Ω C = 150pF contact discharge ESD discharge - MIL STD 883 - Method 3015-6
T
j
T
stg
T
L
T
op
P
r
Junction temperature Storage temperature range Lead solder temperature (10 second duration) Operating temperature Range Power rating per resistor
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
±12 ±25
150 °C
- 55 to +150 °C 260 °C
0to70 °C
100 mW
Symbol Parameters Testconditions Min Typ Max Unit
I
R
Diode leakage current VRM= 5.0V
10 µA
kV kV
V
BR
V
F
2/8
Diode breakdown voltage IR= 1mA Diode forward voltage drop IF= 50mA
6V
0.9 V
KBMFxxSC6
TECHNICAL INFORMATION EMI FILTERING
TheKBMFxxSC6ensurea filtering protection against ElectroMagnetic and RadioFrequency Interferences thanks to its low-pass filter structure. This filter is characterized by the following parameters :
- cut-off frequency
- Insertion loss
- high frequency rejection
Fig. A1: Measurements configuration
TG OUT
50
Vg
TEST BOARD
KM1
RF IN
50
Fig. A2: KBMFxxSC6 attenuation curve
Insertion loss (dB)
0
-10
-20
-30
-40 1 10 100 1000
F (MHz)
ESD PROTECTION
The KBMFxxSC6 is particularly optimized to perform ESD protection. ESD protection is based on the use of device which clamps at :
Vouput V R I
BR d PP
=+.
This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output voltage very low at the Voutput level.
Fig. A3: ESD clamping behavior
Rg
V
PP
ESD Surge
V
Rd
BR
S1
Rs
Vinput
Voutput
KBMFxxSC6
S2
Rd
V
Rload
BR
Device
to be
protected
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