SGS Thomson Microelectronics ITA18B3, ITA10B3, ITA25B3, ITA6V5B3 Datasheet

ITA6V5B3 / ITA10B3

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ApplicationSpecific Discretes

A.S.D.

APPLICATIONS

Differentialdatatransmission lines protection:

-RS-232

-RS-423

-RS-422

-RS-485

FEATURES

HIGH SURGE CAPABILITY TRANSIL ARRAY
I

= 40 A (8/20µs)

PP

PEAKPULSEPOWER: 300 W (8/20µs)
SEPARATEDINPUT-OUTPUT
UPTO9 BIDIREC TION ALTRANS ILFUNCTIO NS
LOWCLAMPINGFACTOR(V

CURRENTLEVEL
LOWLEAKAGECURRENT
ESDPROTECTION UP TO 15kV

TM

CL/VBR

BIDIRECTIONALTRANSIL

)ATHIGH

ITA18B3 / ITA25B3

TM

ARRAY

FOR DATALINE PROTECTION

SO20

FUNCTIONALDIAGRAM

DESCRIPTION

Transil diode arrays provide high overvoltage
protectionby clampingaction.Theirinstantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devicessuch as MOS Technologyand low voltage
suppliedIC’s.

The ITA series allies highsurge capabilityagainst
energetic pulses with high voltage performance
againstESD.

The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltagelike ESD by elimination
of the spikes induced by parasitic inductances
createdby external wiring.

COMPLIESWITHTHEFOLLOWINGSTANDARDS:

IEC1000-4-2: level 4
IEC1000-4-4: level 4
IEC1000-4-5: level 2

MILSTD 883C - Method3015-6: class3
(humanbodymodel)

January 1998 Ed: 2

1/6

ITA6V5B3 / ITA10B3/ ITA18B3 / ITA25B3

ABSOLUTE MAXIMUMRATINGS

(T

amb

=25°C)

Symbol Parameter Value Unit

P

PP

Peak pulsepower dissipation(8/20µs)

Tjinitial= T

amb

300 W

(see note1)

I

PP

2

I

t Wire I2t value (seenote 1) 0.6 A2s

T

stg

T

j

T

L

Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
opencircuit caused by the wire melting.

ELECTRICALCHARACTERISTICS(T

Peak pulsecurrent (8/20µs)(see note 1) Tjinitial= T

Storagetemperaturerange
Maximumoperatingjunction temperature

amb

40 A

- 55 to +150
125

Maximumlead temperaturefor solderingduring10s 260 °C

%I

pp

8s

Pulse wave form 8/20 s

20 s

t

amb

100

50

0

=25°C)

°
°C

C

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

I

PP

α

T Voltagetemperaturecoefficient

Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ V
Peak pulsecurrent

C Junctioncapacitance

Types IRM@V

max. min. 8/20µs max. 8/20µs max. max.

AV VmAV A V A10

µ

ITA6V5B3

ITA10B3
ITA18B3

ITA25B3

Note 2 : BetweenI/Opin and ground.
Note 3 : Betweentwo input Pins at 0V Bias.

Preferredtypes in bold.

10 5 6.5 1 9.5 10 11 25 4 1100

4 8 10 1 13 10 17 25 8 800
4 15 18 1 21 10 26 25 9 500

4 24 25 1 31 10 36 25 12 420

RM

RM

VBR@I

note 2 note 2 note 2 note 3

R

VCL@I

PP

VCL@I

PP

TC

α

-4

/°CpF

2/6

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