SGS Thomson Microelectronics ITA6V1U1 Datasheet
®
ITA6V1U1
Application Specific Discretes
A.S.D.
APPLICATIONS
Data transmission lines protection :
- Unipolar signal up to 5.5V
- Bipolar signal in the +/- 2.5V range
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
■
= 40 A (8/20µs)
I
PP
PEAK PULSE POWER : 300 W (8/20µs)
■
UP TO 6 UNIDIRECTIONAL TRANSIL FUNC-
■
TIONS
LOW CLAMPING FACTOR (VCL/VBR)AT
■
HIGH CURRENT LEVEL
■ LOW LEAKAGE CURRENT
■ ESD PROTECTION UP TO 15kV
TM
TRANSIL
TM
ARRAY
FOR DATALINE PROTECTION
SO-8
FUNCTIONAL DIAGRAM
DESCRIPTION
Transil diode arrays provide high overvoltage
protectionbyclampingaction.Theirinstantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low voltage
supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 1000-4-2 : level 4
IEC 1000-4-4 : level 4
IEC 1000-4-5 : level 2
MIL STD 883C - Method 3015-6 : class 3
(human body model)
I/O
I/O
I/O3
I/O 4
I/O
1
1
2
2
3
4
8
7
6
5
6
GND
GND
I/O 5
August 2001- Ed: 2
1/5
ITA6V1U1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation (8/20µs)
Tj initial = T
amb
300 W
(see note 1)
I
PP
2
I
t
T
stg
T
j
T
L
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
Peak pulse current (8/20µs) (see note 1) Tj initial = T
2
Wire I
t value (see note 1)
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s
%I
pp
100
50
0
amb
-55to+150
8s
Pulse wave form 8/20 s
20 s
40 A
0.6 A
125
260 °C
t
°C
°C
2
s
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
C
V
F
Types IRM@VRMVBR@IRVCL@IPPVCL@IPPαTCV
ITA6V1U1
Note 2 : Between I/O pin and ground.
Note 3 : Between I/O pin and ground, at 0V Bias. F = 1MHz.
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
VCLV
BR
V
Peak pulse current
Voltage temperature coefficient
Junction capacitance
Forward voltage drop
max. min. max. 8/20µsmax. 8/20µsmax. max. max.
note 2 note 2 note 2 note 3
µAVVmAVAVA10
10 5 6.1 1 10 10 12 25 4 1500 1.3 1
I
I
F
V
I
I
F
RM
PP
RM
-4
/°C pF V A
@I
F
F
2/5
Loading...