SGS Thomson Microelectronics ITA18B3, ITA10B3, ITA25B3, ITA6V5B3 Datasheet

ITA6V5B3 / ITA10B3



ApplicationSpecific Discretes

A.S.D.

APPLICATIONS

Differentialdatatransmission lines protection:

-RS-232

-RS-423

-RS-422

-RS-485

FEATURES

HIGH SURGE CAPABILITY TRANSIL ARRAY
I

= 40 A (8/20µs)

PP

PEAKPULSEPOWER: 300 W (8/20µs)
SEPARATEDINPUT-OUTPUT
UPTO9 BIDIREC TION ALTRANS ILFUNCTIO NS
LOWCLAMPINGFACTOR(V

CURRENTLEVEL
LOWLEAKAGECURRENT
ESDPROTECTION UP TO 15kV

TM

CL/VBR

BIDIRECTIONALTRANSIL

)ATHIGH

ITA18B3 / ITA25B3

TM

ARRAY

FOR DATALINE PROTECTION

SO20

FUNCTIONALDIAGRAM

DESCRIPTION

Transil diode arrays provide high overvoltage
protectionby clampingaction.Theirinstantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devicessuch as MOS Technologyand low voltage
suppliedIC’s.

The ITA series allies highsurge capabilityagainst
energetic pulses with high voltage performance
againstESD.

The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltagelike ESD by elimination
of the spikes induced by parasitic inductances
createdby external wiring.

COMPLIESWITHTHEFOLLOWINGSTANDARDS:

IEC1000-4-2: level 4
IEC1000-4-4: level 4
IEC1000-4-5: level 2

MILSTD 883C - Method3015-6: class3
(humanbodymodel)

January 1998 Ed: 2

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ITA6V5B3 / ITA10B3/ ITA18B3 / ITA25B3

ABSOLUTE MAXIMUMRATINGS

(T

amb

=25°C)

Symbol Parameter Value Unit

P

PP

Peak pulsepower dissipation(8/20µs)

Tjinitial= T

amb

300 W

(see note1)

I

PP

2

I

t Wire I2t value (seenote 1) 0.6 A2s

T

stg

T

j

T

L

Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
opencircuit caused by the wire melting.

ELECTRICALCHARACTERISTICS(T

Peak pulsecurrent (8/20µs)(see note 1) Tjinitial= T

Storagetemperaturerange
Maximumoperatingjunction temperature

amb

40 A

- 55 to +150
125

Maximumlead temperaturefor solderingduring10s 260 °C

%I

pp

8s

Pulse wave form 8/20 s

20 s

t

amb

100

50

0

=25°C)

°
°C

C

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

I

PP

α

T Voltagetemperaturecoefficient

Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ V
Peak pulsecurrent

C Junctioncapacitance

Types IRM@V

max. min. 8/20µs max. 8/20µs max. max.

AV VmAV A V A10

µ

ITA6V5B3

ITA10B3
ITA18B3

ITA25B3

Note 2 : BetweenI/Opin and ground.
Note 3 : Betweentwo input Pins at 0V Bias.

Preferredtypes in bold.

10 5 6.5 1 9.5 10 11 25 4 1100

4 8 10 1 13 10 17 25 8 800
4 15 18 1 21 10 26 25 9 500

4 24 25 1 31 10 36 25 12 420

RM

RM

VBR@I

note 2 note 2 note 2 note 3

R

VCL@I

PP

VCL@I

PP

TC

α

-4

/°CpF

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

ITA6V5B3 / ITA10B3/ ITA18B3/ITA25B3

Fig. 1 :

Typical peak pulse power versus

exponentialpulse duration.

P(W)

P

1E+04

1E+03

1E+02

1E+01

Fig. 3 :

P

Tinitial=25C

ITA25B3 ITA18B3

ITA10B3ITA6V5B3

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

Peak current I

DC

j

t (ms) expo

P

inducing open circuit of

o

thewire for one input/outputversuspulseduration
(typicalvalues).

I (A)

1E+03

DC

exponential waveform

Fig. 2 : Clamping voltage versus peak pulse

current(exponentialwaveform 8/20 µs).

Fig. 4 :

Junction capacitance versus reverse
applied voltage for one input/output (typical
values).

1E+02

1E+01

1E+00

1E-02 1E-01 1E+00 1E+01

t (ms)

Fig.5 : Relative variation of leakage current

versus junction temperature

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ITA6V5B3 / ITA10B3/ ITA18B3 / ITA25B3

APPLICATION INFORMATION

Types Maximumdifferentialvoltage

betweentwo input pins at 25°C
ITA6V5B3
ITA10B3
ITA18B3
ITA25B3

Typicalapplication: RS232junction.

+/ - 3.5 V
+/ - 5.0 V
+/ - 9.0 V

+ / - 12.5 V

This monolithic Transil Array is based on 10
unidirectionalTransilswith a commoncathode and
can be configurated to offer up to 9 bidirectional
functions. This imposes a maximum differential
voltagebetween2 inputpins (see opposite table).

TX

RX

RTS

CTS

DTR

DSR

CARRIER DET.

AUX

GND

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

ITA6V5B3 / ITA10B3/ ITA18B3/ITA25B3

APPLICATION NOTICE
Designadvantageof ITAxxxB3used with 4-point structure.

The ITAxxxB3 has been designed with a 4-point structure (separated Input/output)in order to efficiently
protectagainst disturbanceswith very highdi/dt rates, suchas ESD.

Thepurpose of this 4-pointstructureis to eliminatetheovervoltageintroducedbythe parasiticinductances
ofthe wiring (Ldi/dt).

Efficient protection depends not only on the component itself, but also on the circuit layout.The drawing
given in figure shows the layout to be used in order to take advantage of the 4-point structure of the
ITAxxxB3.

Withthis layout,each line to be protectedpasses through the protectiondevice.
In this way, it realizes an interface between the dataline and the circuitto be protected,guaranteeing an

isolationbetween its inputs and outputs.

The 4 - point structurelayout.

ORDERCODE

INTEGRATED
TRANSILARRAY

ITA 25 B 3 RL

PACKAGING:
RL = Tapeand reel.

= Tube.

PACKAGE :SO20PLASTIC

min

V

BR



BIDIRECTIONAL

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ITA6V5B3 / ITA10B3/ ITA18B3 / ITA25B3

MARKING

TYPE MARKING

ITA6V5B3 ITA6V5B2

ITA10B3 ITA10B3
ITA18B3 ITA18B3
ITA25B3 ITA25B3

PACKAGEMECHANICALDATA

SO20 (Plastic)

DIMENSIONS

REF.

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

A 2.65 0.104

A1 0.10 0.20 0.004 0.008

B 0.33 0.51 0.013 0.020
C 0.23 0.32 0.009 0.013
D 12.6 13.0 0.484 0.512
E 7.40 7.60 0.291 0.299
e 1.27 0.050
H 10.0 10.65 0.394 0.419
h 0.50 0.020
L 0.50 1.27 0.020 0.050
K8

°

(max)

Packaging: standardpackagingis tape and reel.
Weight:0.55g.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwise under any patentor patent rights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS­THOMSON Microelectronics productsare not authorizedfor useas criticalcomponents in life support devices or systems withoutexpress writ­ten approval of SGS-THOMSON Microelectronics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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