SGS Thomson Microelectronics ITA25C1, ITA18C1, ITA10C1, ITA6V5C1 Datasheet
ITA6V5C1 / ITA10C1
ITA18C1 / ITA25C1
MONOLITHICTRANSIL ARRAYFOR DATALINE PROTECTION
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
I
=40A 8/20µs
PP
UP TO 5 BIDIRECTIONAL TRANSIL FUNCTIONS
BREAKDOWNVOLTAGEANDMAXIMUMDIFFERENTIAL VOLTAGE BETWEEN TWO
INPUTPINS:
ITA6V5= 6.5V
ITA10= 10 V
ITA18= 18 V
ITA25= 25 V
LOWCLAMPINGFACTOR(V
CURRENT LEVEL
LOW LEAKAGECURRENT
LOW INPUTCAPACITANCE
CL/VBR
)AT HIGH
SO8
DESCRIPTION
Thisis a specifictransil arrayforRS232,RS423 interface protection developed in monolithic chip
forminordertoprovide a high surge capabilityand
a low clamping voltage
IN ACCORDANCE WITH :
- ESD standard:
. IEC801-2 15kV 5ns/ 50ns
. IEC801-4 40A 5ns/ 50ns
. IEC801-5 1kV 1.2 / 50µs
25A 8 / 20µs
. MIL STD 883C - Method3015-2
V
= 25kV
P
C = 150pF
R = 150Ω
5 s duration
- Human body test :
= 4kV
V
P
C= 150pF
R= 150Ω
FUNCTIONAL DIAGRAM
I/01 1
I/02 2
I/03 3
I/04 4
EQUIVALENTTO 4 BIDIRECTIONAL TRANSILS
GND
8
7
6
5 GND
April 1998 - Ed: 3
1/5
ITA6V5C1/ITA10C1 / ITA18C1 / ITA25C1
ABSOLUTE RATINGS(limiting values)(0°C ≤ Tamb≤ 70°C)
Symbol Parameter Value Unit
I
PP
Peak pulsecurrentfor 8/20µsexponential
pulse
2
I
t Wire I2t value Seenote 0.6 A2s
T
stg
T
j
Storageand JunctionTemperatureRange - 55to + 150
Seenote 40 A
125
°C
°C
Note :
For surgesgreater than the maximum value specified, the
input/output will present first a short circuit to the common
bus line and after an open circuit causedby the wire.
ELECTRICAL CHARACTERISTICS
Symbol Parameter
I
RM
V
RM
V
BR
V
CL
I
PP
LeakageCurrent@ V
Stand-offVoltage
BreakdownVoltage
ClampingVoltage
SurgeCurrent
RM
C InputCapacitance
100
%I
pp
8s
Pulse wave form8/20 s
50
0
20 s
I
I
PP
I
R
I
RM
V
V
RM
BR
t
V
V
CL
I
Types
@VRMV
RM
max min 8/20µs max 8/20µs max max max
Note 1 Note 1 Note 1 Note 2 Note 3
µA V V mA V A V A pF pF 10
@IRVCL@I
BR
PP
V
CL
I
PP
C1 C2
ITA6V5C1 10 5 6.5 1 10 10 12 25 750 550 4
ITA10C1 10 8 10 1 15 10 19 25 570 260 8
ITA18C1 4 15 18 1 25 10 28 25 350 180 9
ITA25C1 4 24 25 1 33 10 38 25 300 100 12
Allparameterstested at 25°C, exceptwhereindicated.
Note 1: BetweenI/O pin and ground.
Note 2: BetweentwoinputPins at 0 VBias.
Note 3:
2/5
Betweentwo inputPinsatV
RM
.
α
T
-4
/°C
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