SGS Thomson Microelectronics IRFP450 Datasheet
IRFP450
N - CHANNEL 500V - 0.33Ω - 14A - TO-247
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
IRFP450 500 V < 0.4 Ω 14 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
=0.33 Ω
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidated strip layout-basedMESH
OVERLAY process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
■ HIGH CURRENTSWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY(UPS)
■ DC/DC COVERTERSFOR TELECOM,
INDUSTRIAL, AND LIGHTINGEQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limitedby safe operating area (1)ISD≤14 A, di/dt ≤ 130 A/µs, VDD≤ V
August 1998
Drain-source Volt age (VGS=0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- source Voltage ± 20 V
GS
Drain C ur rent ( c on t inuous) a t Tc=25oC14A
I
D
Drain C ur rent ( c on t inuous) a t Tc=100oC8.7A
I
D
500 V
(•) Dra in Current (pul s ed ) 56 A
Tot al Dis sip at ion at Tc=25oC190W
tot
Derating Factor 1.5 W/
1) Peak Diode Recov er y v o lt age sl ope 3.5 V/ns
Sto rage T em pe r ature -65 to 15 0
stg
Max. O perating Junction Te m perature 150
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
IRFP450
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Unit
I
AR
E
Ther mal Resist an c e Junct io n- ca s e Max
Ther mal Resist an c e Junct io n- am bient Max
Ther mal Resist an c e Case-sink Typ
Maximum Lead Te mperature For Soldering Purpose
l
Avalanche C urr e nt , R ep et it i v e o r Not- Re petitive
(pulse w idth limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
0.66
30
0.1
300
14 A
800 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
500 V
Breakdown V oltage
I
DSS
I
GSS
Zer o G at e Voltage
Drain Curre nt ( V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce O n
VGS=10V ID= 8.4 A 0.33 0.4 Ω
Resistance
I
D(on)
On S tate Drain Cu r re nt VDS>I
D(on)xRDS(on)max
14 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Ca pac i t an c e
iss
Out put Capa c itance
oss
Reverse T ransfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=8.4A 9.3 13 S
VDS=25V f=1MHz VGS= 0 2600
330
40
µA
µA
pF
pF
pF
2/8
IRFP450
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Tim e
Rise T im e
VDD=250V ID=7A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 1)
Q
Q
Q
Total Gate Charge
g
Gat e-Sourc e Cha r ge
gs
Gate-Drain Charge
gd
VDD=400V ID=14A VGS=10V 75
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
r(Voff)
t
Of f - voltage Ris e Time
t
Fall Time
f
Cross-over Tim e
c
VDD=400V ID=14A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Cu rrent
(•)
Source-drain Cu rrent
(pulsed)
(∗) For ward O n V o lt age ISD=14A VGS=0 1.4 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 14 A di/dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 3)
Charge
Reverse Recovery
Current
24
14
13.5
27
15
25
35
14
56
680
9
26
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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