IRFP250
N-CHANNEL 200V - 0.073Ω - 33A TO-247
PowerMesh™II MOSFET
TYPE V
DSS
IRFP250 200V < 0.085
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 0.073Ω
DS
R
DS(on)
I
D
Ω
33 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLIES (UPS)
■ DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 5 V/ns
T
stg
T
(•)Pu l se width limite d by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
200 V
200 V
Gate- source Voltage ±20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 132 A
Total Dissipation at TC = 25°C
33 A
20 A
180 W
Derating Factor 1.44 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD ≤33A, di/dt ≤300A/µs , VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
1/8Sep 2000
IRFP250
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 200 V
33 A
600 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250 µA
DS
VGS = 10V, ID = 16A
234V
0.073 0.085
Resistance
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
33 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance VDS > I
ID= 16A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 420 pF
Reverse Transfer
Capacitance
V
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
10 25 S
2850 pF
120 pF
Ω
2/8
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time 50 ns
Total Gate Charge
Gate-Source Charge 15 nC
Gate-Drain Charge 50 nC
= 100V, ID =16 A
DD
RG= 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
V
= 160V, ID = 33 A,
DD
VGS = 10V, RG=4.7
Ω
25 ns
117 158 nC
SWITCHING OFF
Symbol Param eter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
t
f
t
c
Fall Time 40 ns
Cross-over Time 100 ns
V
= 160V, ID = 16 A,
DD
RG= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
60 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pul se duration = 300 µs, duty cycle 1 .5 %.
2. Pulse width l i m i t ed by safe operat i ng area.
(2)
Source-drain Current 33 A
Source-drain Current (pulsed) 132 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charg e 5.4 µC
ISD = 33 A, VGS = 0
I
= 33 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
1.6 V
370 ns
Reverse Recovery Curren t 29 A
IRFP250
Safe Operating Area Thermal Impedance
3/8
IRFP250
Output Characteristics
Tranconductance
Tranfer Characteristics
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage
4/8
Capacitance Variations
Source-drain Diode Forward Characteristic s
IRFP250
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
5/8
IRFP250
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
TO-247 MECHANICAL DATA
IRFP250
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
mm inch
P025P
7/8
IRFP250
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of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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