SGS Thomson Microelectronics IRF840 Datasheet
IRF840
N - CHANNEL 500V - 0.75Ω - 8A - TO-220
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
IRF840 500 V < 0.85 Ω 8A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
=0.75 Ω
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidated strip layout-basedMESH
OVERLAY process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITHMODE POWER SUPPLIES (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 8A, di/dt ≤ 100 A/µs, VDD≤ V
First Digitof theDatecode Being Z or K IdentifiesSiliconCharacterized in this Datasheet
August 1998
Drain-source Voltage (VGS=0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)
DGR
Gat e- sourc e Vo lt age ± 20 V
GS
Drain Cur rent ( contin uous) at Tc=25oC8.0A
I
D
Drain Cur rent ( contin uous) at Tc=100oC5.1A
I
D
500 V
(•) Dra in C urr ent (pulsed ) 32 A
Tot al Dissipati on at Tc=25oC125W
tot
Derating Factor 1.0 W/
1) Peak D i ode Re covery vo lt age s l ope 3.5 V/ns
Sto rage Tempe r ature -65 to 150
stg
Max. Operatin g Ju nc t io n Tem peratu re 150
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
IRF840
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Unit
I
AR
E
Ther mal Res ist an c e Junc t io n- ca s e Max
Ther mal Res ist an c e Junc t io n- ambient Max
Ther mal Res ist an c e Case- sink Ty p
Maximum Lead Tempera t u re F o r S oldering Purpos e
l
Avalanche C ur re nt , Repetit i ve o r Not-Re petitiv e
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1.0
62.5
0.5
300
8.0 A
520 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
500 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gat e Voltage
Drain Current (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 4.8 A 0.75 0.85 Ω
Resistance
I
D(on)
On S tate Drain Curre nt VDS>I
D(on)xRDS(on)max
8.0 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itanc e
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=4.8A 4.9 S
VDS=25V f=1MHz VGS= 0 1300
200
18
µA
µA
pF
pF
pF
2/8
IRF840
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=250V ID=4.3A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sou rc e Char ge
gs
Gate-Drain Charge
gd
VDD=400V ID=8.0A VGS=10V 39
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
t
r(Voff)
t
Of f - voltag e Rise Time
t
Fall Time
f
Cross-ov er T ime
c
VDD=400V ID=8A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
(pulsed)
(∗) For ward On Vo lt age ISD=8.0A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 8.0 A di/dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
Charge
Reverse Recovery
Current
19
11
50 nC
10.6
13.7
11.5
11
20
8.0
32
420
3.5
16.5
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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