SGS Thomson Microelectronics IRF740 Datasheet
IRF740
N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
IRF740 400 V < 0.55 Ω 10 A
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
= 0.48 Ω
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidatedstrip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standardpartsfrom varioussources.
APPLICATIONS
■ HIGHCURRENT SWITCHING
■ UNINTERRUPTIBLEPOWERSUPPLY(UPS)
■ DC/DC COVERTERSFOR TELECOM,
INDUSTRIAL,AND LIGHTING EQUIPMENT.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤10 A, di/dt ≤
First Digit of the Datecode Being Z orK IdentifiesSilicon Characterized in this Datasheet
October 1998
Drain-source Voltage (VGS=0) 400 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Voltage
GS
Drain Current (continuous) at Tc=25oC10A
I
D
Drain Current (continuous) at Tc=100oC6.3A
I
D
400 V
20 V
±
(•) Drain Current (pulsed) 40 A
Total Dissipation at Tc=25oC125W
tot
Derating Factor 1.0 W/
1) Peak Diode R ec ov e ry volt age slop e 4.0 V/ns
St orage Tempe rature -65 to 1 50
stg
Max. Op er a t ing J unc t ion T emperat u r e 150
T
j
120
Α/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/8
IRF740
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max V alue Uni t
I
AR
E
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- amb ient Max
Thermal Resistance Case-sink Typ
Maximum Lead Tem perature Fo r Soldering Pur p ose
l
Avalanche Curr ent, Repetit ive or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
1.0
62.5
0.5
300
10 A
520 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
400 V
Break d own V o lt age
ON (
I
DSS
I
GSS
∗)
Zero Gate Voltage
Drain Current (V
GS
Gat e- b ody Le akage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
= ± 20 V
V
GS
1
50
± 100 nA
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µA
234V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 5 .3 A 0.48 0.55
Resistance
I
D(on)
On Stat e Drain Current VDS>I
D(on)xRDS(on )max
10 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Cap ac i t ance
iss
Out put Capacitance
oss
Reverse Transf er
rss
Capacitance
VDS>I
D(on)xRDS(on )maxID
=6A 5.8 S
VDS=25V f=1MHz VGS= 0 1400
220
27
µA
µ
Ω
pF
pF
pF
A
2/8
IRF740
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
t
r
Rise Time
VDD= 200 V ID=5A
=4.7 Ω VGS=10V
R
G
17
10
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 320 V ID= 10.7 A VGS=10V 35
11
12
43 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-over T i me
c
VDD= 320 V ID=10A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
10
10
17
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Curr ent
(•)
Source-drain Curr ent
10
40
(pulsed)
(∗) For ward On Voltage ISD=10A VGS=0 1.6 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
=10 A di/dt = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
370
3.2
Charge
Reverse Recov er y
17
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
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